DNA-inorganic hybrid material as selective absorbent for harmful compounds

Double-stranded DNA is one of functional polymers, but the large amounts of DNA sources, such as salmon milt and shellfish gonads, have been discarded as industrial wastes. Therefore, conversion of this discarded DNA to be a useful material would be beneficial to utilize the unique property of DNA. These materials including DNA have been prepared by mixing with the organic polymers, such as alginic acid, collagen, and chitosan. However, since these materials have consisted from entirely organic components, these do not have the mechanical strength for a material. So, we prepared the organic-inorganic hybrid materials by mixing DNA with silane coupling reagents bis(trimethoxysilylpropyl)amine or bis[(3-trimethoxysilyl)propyl]ethylenediamine. These hybrid materials with the flexibility were water-insoluble and resistant to hydrolysis by nuclease. In addition, the mechanical strength of this hybrid material was approximately twice as high as that of DNA without mixing with silane coupling reagents. Furthermore, the double-stranded DNA in the hybrid materials has been maintained in a B-form structure in aqueous solution. Thus, we demonstrated the utilization of DNA as a functional material. As a result, this material could selectively accumulate harmful DNA-intercalating compounds with the planar structure, such as dibenzo-p-dioxin, dibenzofuran, and ethidium bromide. Organic-inorganic hybrid material including double-stranded DNA has potential to serve as a useful biomaterial for medical, engineering, and environmental applications.     

Effects of electrode arrangement and pressure on synthesis of diamond films by arc discharge plasma jet chemical vapor deposition

The setup and deposition conditions of electrode arrangement and pressure have been studied to synthesize diamond films at high growth rate on wide area efficiently by arc discharge plasma jet chemical vapor deposition. An apparatus has been used in which four plasma torches, one is used for cathode and the others for divided anodes, are arranged and the positions of these torches are changeable. Growth rate, deposition area and thickness of diamond films have increased with changing the electrode arrangements without improvement of thickness variation. Maximum growth rate of our apparatus has occurred at the pressure of 6.7 kPa and diamond films that have less variations of quality and surface roughness have been synthesized at lower pressure during deposition. Moreover, a high conversion rate, which is the ratio of carbon atoms that form diamond in supplied methane gas, of 16% has been obtained at the pressure of 6.7 kPa and methane concentration of 2%.     

Electrical properties at p-ZnSe/metal interfaces

In order to prepare low resistance ohmic contacts to p-ZnSn by the “deposition and annealing (DA)” technique which has been extensively used for GaAs and Si-based devices, formation of a heavily doped layer by the p-ZnSe/metal reaction is required. For p-ZnSe/Ni contacts, Ni and Se reacted preferentially at the ZnSe/Ni interface upon annealing at temperatures higher than 250°C. However, capacitance-voltage measurements showed that the net acceptor concentration (N_A-N_D) close to the p-ZnSe/Ni interface was reduced upon the Ni/ZnSe reaction, resulting in high contact resistance. For p-ZnSe/Au contacts, neither Au/ZnSe reaction nor reduction of the acceptor concentration were observed after annealing at temperatures lower than 300°C. This indicates that although the metal/p-ZnSe reaction is mandatory to prepare a heavily doped layer, the reaction induced an increase in the compensation donors in the p-ZnSe substrate. In order to increase the acceptor concentration in the vicinity of the p-ZnSe/metal interface through diffusion from the contact materials, Li or O which was reported to play the role of an acceptor in ZnSe was deposited with a contact metal and annealed at elevated temperatures. Ni or Ag was selected as the contact metal, because these metals were expected to enhance Li or O doping by reacting with ZnSe. However, the current density-voltage characteristics of the Li(N)/Ni and Ag(O) contacts exhibited rectifying behavior, and the contact resistances increased with increasing annealing temperature. The present results indicated that, even though the acceptor concentration in the p-ZnSe substrate increased by diffusion of the dopants from the contact elements, an increment of the compensation donors was larger than that of the acceptors. The present experiments indicated that preparation of low resistance ohmic contacts by forming a heavily doped intermediate layer between p-ZnSe and metal is extremely difficult by the DA technique.     

Twin-Related Tetragonal Variants in Yttria Partially Stabilized Zirconia

Crystals of yttria partially stabilized zirconia were grown by the arc-image floating-zone technique and studied by transmission electron microscopy. Crystals annealed at 1700°C consist of tetragonal precipitates and a cubic matrix. The platelike domains in a precipitate are twin-related tetragonal variants stacked alternately parallel to the (011) twin plane. The axial relations between the tetragonal precipitate and the cubic matrix are [100]_tetragonal|[100]_cubic, [011]_tetragonal|[011]_cubic.     

Analysis of polarization plane rotation characteristic in 2D photonic crystal waveguide with chiral medium by condensed node spatial network

Using the photonic band gap in photonic crystals, the fundamental waveguide structures for the light wavelength range have been developed. Based on the fine structure of these many functional devices have been proposed by analytical or numerical simulation methods and the experiments of trial manufacture. In this paper, the treatment of chiral dielectric in the Condensed Node Spatial Network for the vector potential is explained, and we show the polarization plane rotation property in air‐hole and pillar type photonic crystal waveguide structures with the chiral medium substrate. Then, we show the fundamental advantage of the air‐hole type photonic crystal waveguide structure in application to a mode converter. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 152(1): 7–14, 2005; Published online in Wiley InterScience ( www.interscience. wiley.com ). DOI 10.1002/eej.20098     

Integrating local action elements for action analysis

In this paper, we propose a framework for human action analysis from video footage. A video action sequence in our perspective is a dynamic structure of sparse local spatial–temporal patches termed action elements, so the problems of action analysis in video are carried out here based on the set of local characteristics as well as global shape of a prescribed action. We first detect a set of action elements that are the most compact entities of an action, then we extend the idea of Implicit Shape Model to space time, in order to properly integrate the spatial and temporal properties of these action elements. In particular, we consider two different recipes to construct action elements: one is to use a Sparse Bayesian Feature Classifier to choose action elements from all detected Spatial Temporal Interest Points, and is termed discriminative action elements. The other one detects affine invariant local features from the holistic Motion History Images, and picks up action elements according to their compactness scores, and is called generative action elements. Action elements detected from either way are then used to construct a voting space based on their local feature representations as well as their global configuration constraints. Our approach is evaluated in the two main contexts of current human action analysis challenges, action retrieval and action classification. Comprehensive experimental results show that our proposed framework marginally outperforms all existing state-of-the-arts techniques on a range of different datasets.     

Preparation of spherical fine ZnO particles by the spray pyrolysis method using ultrasonic atomization techniques

An ultrasonic atomizer was used in the spray pyrolysis method to prepare fine, spherical and uniform ZnO particles. Almost spherical particles were obtained successfully which had a mean particle size of 0.15 m and had a very narrow particle size distribution. By using alcohol as the solvent, it was found that the particles do not have hollow shell layers which could usually be observed in the spray pyrolysis process by using water as the solvent. The morphology of the ZnO particles was strongly affected by the concentration of the starting solution.     

Formation of monodispersed Ta2O5 powders

The Ta₂O₅ powders synthesized by the hydrolysis of tantalum pentaethoxide, Ta(OC₂H₅)₅ in alcoholic solution were monodispersed fine oxide particles, which were a uniform, spherical shape, non-agglomerate, and had a narrow size distribution. They grew to 1.2m after ageing for 1 h after hydrolysis. Powder X-ray diffraction and differential thermal analysisthermogravimetric analysis showed the particles were amorphous and hydrated. These particles lost the water at 290° C and gave well-crystalline Ta₂O at 740° C. Throughout these thermal processes, the particle morphology was kept almost the same.     

Effect of Silicon Dioxide on the Thermal Diffusivity of Aluminum Nitride Ceramics

The thermal diffusivity of AlN ceramics was significantly decreased by the addition of SiO₂. The AlN ceramics with 4 wt% SiO₂ could not be densified by pressureless sintering in the temperature range 1400° to 1800°C. The thermal diffusivity of these samples was very low because of their porous structure. The AlN ceramics containing 2, 4, and 8 wt% SiO₂ were densified by hot-pressing and also had low thermal diffusivity. In these samples, the grains of the 27R polytype that resulted from the reaction between AlN and SiO₂ were dispersed, obstructing the conduction of heat. The relation between the amount of 27R polytype and the thermal diffusivity of the AlN ceramics was determined.