Sequential packing algorithm for channel assignment under cochanneland adjacent-channel interference constraint

Generally, the channel-assignment problem (CAP) for mobile cellular systems is solved by graph-coloring algorithms. These algorithms, though sometimes can yield an optimal solution, do not supply any information on whether an optimal solution has been found or bow far away it is from the optimum. In view of these undesirable features, two relevant results are presented. First, a lower bound for the minimum number of channels required to satisfy a given call-traffic demand is derived. This lower bound is tighter than the existing ones under certain conditions and can be used as a supplement for other approximate algorithms. Second, we propose an efficient heuristic algorithm to solve this problem. Although the CAP is nondeterministic polynomial (NP) complete in general, our algorithm provides an optimal solution for a special class of network topologies. For the general case, promising results are obtained, and numerical examples show that our algorithm has a better performance than many existing algorithms     

High‐Performance,Transparent Thin Film Hydrogen Gas Sensor Using 2D Electron Gas at Interface of Oxide Thin Film Heterostructure Grown by Atomic Layer Deposition

A high‐performance, transparent, and extremely thin (<15 nm) hydrogen (H₂) gas sensor is developed using 2D electron gas (2DEG) at the interface of an Al₂O₃/TiO₂ thin film heterostructure grown by atomic layer deposition (ALD), without using an epitaxial layer or a single crystalline substrate. Palladium nanoparticles (≈2 nm in thickness) are used on the surface of the Al₂O₃/TiO₂ thin film heterostructure to detect H₂. This extremely thin gas sensor can be fabricated on general substrates such as a quartz, enabling its practical application. Interestingly, the electron density of the Al₂O₃/TiO₂ thin film heterostructure can be tailored using ALD process temperature in contrast to 2DEG at the epitaxial interfaces of the oxide heterostructures such as LaAlO₃/SrTiO₃. This tunability provides the optimal electron density for H₂ detection. The Pd/Al₂O₃/TiO₂ sensor detects H₂ gas quickly with a short response time of <30 s at 300 K which outperforms conventional H₂ gas sensors, indicating that heating modules are not required for the rapid detection of H₂. A wide bandgap (>3.2 eV) with the extremely thin film thickness allows for a transparent sensor (transmittance of 83% in the visible spectrum) and this fabrication scheme enables the development of flexible gas sensors.     

Wide‐Band Fine‐Resolution DCO with an Active Inductor and Three‐Step Coarse Tuning Loop

This paper presents a wide‐band fine‐resolution digitally controlled oscillator (DCO) with an active inductor using an automatic three‐step coarse and gain tuning loop. To control the frequency of the DCO, the transconductance of the active inductor is tuned digitally. To cover the wide tuning range, a three‐step coarse tuning scheme is used. In addition, the DCO gain needs to be calibrated digitally to compensate for gain variations. The DCO tuning range is 58% at 2.4 GHz, and the power consumption is 6.6 mW from a 1.2 V supply voltage. An effective frequency resolution is 0.14 kHz. The phase noise of the DCO output at 2.4 GHz is –120.67 dBc/Hz at 1 MHz offset.     

A 15 nm Ultra‐thin Body SOI CMOS Device' with Double Raised Source/Drain for 90 nm Analog Applications

Fully‐depleted silicon‐on‐insulator (FD‐SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the singleraised (SR) and double‐raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self‐heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self‐heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a 1.1 µm² 6T‐SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra‐thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.     

Matrix unit cell scheduler (MUCS) for input-buffered ATM switches

This paper presents a novel matrix unit cell scheduler (MUCS) for input-buffered asynchronous transfer mode (ATM) switches. The MUCS concept originates from a heuristic strategy that leads to an optimal solution for cell scheduling. Numerical analysis indicates that input-buffered ATM switches scheduled by MUCS can utilize nearly 100% of the available link bandwidth. A transistor-level MUCS circuit has been designed and verified using HSPICE. The circuit features a regular structure, minimal interconnects, and a low transistor count. HSPICE simulation indicates that using 2-μm CMOS technology, the MUCS circuit can operate at clock frequency of 100 MHz     

Thermally robust Ta2O5 capacitor for the256-Mbit DRAM

The thermal degradation of the Ta₂ O₅ capacitor during BPSG reflow has been studied. The cause of deterioration of Ta₂O₅ with the TiN top electrode was found to be the oxidation of TiN. By placing a poly-Si layer between TiN and BPSG to suppress oxidation, the low leakage current level was maintained after BPSG reflow at 850°C. The Ta₂O₅ capacitor with the TiN/poly-Si top electrode was integrated into 256-Mbit DRAM cells and excellent leakage current characteristics were obtained     

Computation of the average power pattern of a reflector antennawith random surface errors and misalignment errors

To specify manufacturing tolerances of a reflector antenna, various errors such as random surface errors and misalignment errors must be considered at one time because superposition of the effects of those errors may not hold. Based on the Rahmat-Samii's formulation (1983), a method for computing efficiently the average power pattern of a reflector antenna with those errors is presented. Simulation results show that superposition of the effects of errors does not generally hold and demonstrate how those errors degrade the peak-gain and sidelobe levels     

应用覆膜支架介入救治颈动脉破裂并假性动脉瘤

目的探讨应用覆膜支架介入治疗颈动脉破裂并假性动脉瘤.方法4例肿瘤所致颈动脉破裂并假性动脉瘤形成的患者,均出现颈部或口腔危及生命的出血,采用Seldinger方法,选用自膨式聚四氟乙烯覆膜支架治疗.结果4例成功施行血管内介入治疗,其中颈总动脉中段1例,颈动脉球2例,颈总动脉远段1例.共置入覆膜支架6枚.术后假性动脉瘤腔被隔绝,颈动脉通畅,患者的临床症状明显改善,无神经功能障碍.1例患者11 d后支架下缘颈总动脉与原瘤腔相通,再次置入覆膜支架,2个月的随访无再出血.1例患者经钢圈栓塞、放置覆膜支架及裸支架瘤腔     

Improved electrochromic devices with an inorganic solid electrolyte protective layer

The durability problem of electrochromic devices (ECD) in Li ion-conducting electrolytes may be due to the degradation of the ECD electrode matrix and irreversibly reacting Li ions during cycling. With this hypothesis, we investigated the performance of WO₃ film with an inorganic solid electrolyte, lithium phosphorous oxynitride (LiPON), protective layer and of the ECD composed of WO₃ and V₂O₅ with a LiPON protective layer prepared by RF magnetron sputtering. WO₃ and ECD (glass/ITO/V₂O₅/LiPON/electrolyte/LiPON/WO₃/ITO/glass) with a protective layer not only showed improved durability with continuous potential cycling, but also demonstrated a good memory effect under voltage-off, good response times and high coloration efficiency (CE). Our results demonstrated that LiPON layers are electrochemically stable, enhance the electrochromic properties in Li ion-conducting electrolytes, and can be used as a protective layer for ECD.