全文获取类型
收费全文 | 102813篇 |
免费 | 1485篇 |
国内免费 | 1229篇 |
专业分类
电工技术 | 1926篇 |
综合类 | 138篇 |
化学工业 | 10500篇 |
金属工艺 | 5462篇 |
机械仪表 | 3194篇 |
建筑科学 | 2033篇 |
矿业工程 | 159篇 |
能源动力 | 2959篇 |
轻工业 | 6060篇 |
水利工程 | 704篇 |
石油天然气 | 668篇 |
武器工业 | 15篇 |
无线电 | 15946篇 |
一般工业技术 | 21788篇 |
冶金工业 | 25250篇 |
原子能技术 | 1383篇 |
自动化技术 | 7342篇 |
出版年
2022年 | 452篇 |
2021年 | 696篇 |
2020年 | 522篇 |
2019年 | 676篇 |
2018年 | 1129篇 |
2017年 | 1093篇 |
2016年 | 1175篇 |
2015年 | 926篇 |
2014年 | 1494篇 |
2013年 | 4669篇 |
2012年 | 2572篇 |
2011年 | 3847篇 |
2010年 | 3100篇 |
2009年 | 3721篇 |
2008年 | 3897篇 |
2007年 | 4082篇 |
2006年 | 3691篇 |
2005年 | 3337篇 |
2004年 | 3183篇 |
2003年 | 3029篇 |
2002年 | 2670篇 |
2001年 | 2975篇 |
2000年 | 2721篇 |
1999年 | 3076篇 |
1998年 | 9437篇 |
1997年 | 6153篇 |
1996年 | 4761篇 |
1995年 | 3162篇 |
1994年 | 2787篇 |
1993年 | 2726篇 |
1992年 | 1629篇 |
1991年 | 1594篇 |
1990年 | 1518篇 |
1989年 | 1322篇 |
1988年 | 1171篇 |
1987年 | 861篇 |
1986年 | 888篇 |
1985年 | 916篇 |
1984年 | 803篇 |
1983年 | 699篇 |
1982年 | 699篇 |
1981年 | 681篇 |
1980年 | 567篇 |
1979年 | 476篇 |
1978年 | 414篇 |
1977年 | 533篇 |
1976年 | 958篇 |
1975年 | 299篇 |
1974年 | 276篇 |
1973年 | 256篇 |
排序方式: 共有10000条查询结果,搜索用时 31 毫秒
101.
A multipath structure of a ring resonator is proposed to expand the free spectral range. Simulation work indicates that the multipath ring resonator has 25 GHz-adjacent-channel crosstalk of -41 dB, maximum interchannel crosstalk of -18 dB, and -1 dB bandwidth of 4 GHz for a typical expansion factor of 10. The results show the advantages of characteristics compared with a double-cavity ring resonator and a triple-coupler ring resonator. 相似文献
102.
A novel super-multi-fibre planar lightwave circuit (PLC) connector, designed to connect tens of optical fibres and a PLC for super-multichannel PLC-based optical modules with a receptacle interface, is proposed. This connector employs an angled connection instead of a PC connection. A 0.127 mm pitch 32-fibre connector is also demonstrated, which exhibits low connection and high return losses. 相似文献
103.
L. Sheeney‐Haj‐Ichia S. Pogorelova Y. Gofer I. Willner 《Advanced functional materials》2004,14(5):416-424
Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation. 相似文献
104.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
105.
H.S. Seo Y.G. Choi B.J. Park D.H. Cho K.H. Kim 《Photonics Technology Letters, IEEE》2003,15(9):1198-1200
A flat signal gain over in the entire C- and L-bands by erbium (Er) ions' radiative transition and stimulated Raman scattering in an Er-doped germano-silica fiber can be obtained if proper values of the concentration of Er and background loss in a fiber core are obtained during the fiber fabrication process. The optimized conditions for the flat C- and L-band gain are analyzed as functions of Er concentrations. Even for a low-gain value provided by a germano-silica core fiber with a low Er concentration and an optimum fiber length, a relatively low pump is required to obtain the flat gain band. 相似文献
106.
Vassiliou I. Vavelidis K. Georgantas T. Plevridis S. Haralabidis N. Kamoulakos G. Kapnistis C. Kavadias S. Kokolakis Y. Merakos P. Rudell J.C. Yamanaka A. Bouras S. Bouras I. 《Solid-State Circuits, IEEE Journal of》2003,38(12):2221-2231
The drive for cost reduction has led to the use of CMOS technology in the implementation of highly integrated radios. This paper presents a single-chip 5-GHz fully integrated direct conversion transceiver for IEEE 802.11a WLAN systems, manufactured in 0.18-/spl mu/m CMOS. The IC features an innovative system architecture which takes advantage of the computing resources of the digital companion chip in order to eliminate I/Q mismatch and achieve accurately matched baseband filters. The integrated voltage-controlled oscillator and synthesizer achieve an integrated phase noise of less than 0.8/spl deg/ rms. The receiver has an overall noise figure of 5.2 dB and achieves sensitivity of -75 dBm at 54-Mb/s operation, both referred to the IC input. The transmit error vector magnitude is -33 dB at -5-dBm output power from the integrated power-amplifier driver amplifier. The transceiver occupies an area of 18.5 mm/sup 2/. 相似文献
107.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
108.
Y.K. Su H.C. Wang C.L. Lin W.B. Chen S.M. Chen 《Photonics Technology Letters, IEEE》2003,15(10):1345-1347
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated. 相似文献
109.
Z-transform implementation of the perfectly matched layer for truncating FDTD domains 总被引:1,自引:0,他引:1
A simple algorithm for implementing the perfectly matched layer (PML) is presented for truncating finite difference time domain (FDTD) computational domains. The algorithm is based on incorporating the Z-transform method into the PML FDTD implementation. The main advantage of the algorithm is its simplicity as it allows direct FDTD implementation of Maxwell's equations in the PML region. In addition, the formulations are independent of the material properties of the FDTD computational domain. Numerical examples are included to demonstrate the effectiveness of these formulations. 相似文献
110.
We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si. 相似文献