Einfluß von imidhydantoinpolymeren auf den reststrom modifizierter metalloxid-halbleitertransistoren

Copolymers containing hydantoin- and imide-groups were prepared using purified materials and applied to the surface of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) in order to amplify the influence of copolymers on semiconductor devices. The influence of the polymers on the residual current of the device was analyzed with respect to impurity content, softening temperature of the polymers, composition ratios etc. It was found that the residual current increases with increasing flowing temperature of the polymer containing only imide groups, and with increasing content of hydantoin groups.     

0.15-μm buried-channel p-MOSFETs with ultrathin boron-dopedepitaxial Si layer

We demonstrated silicon MOSFETs with a counter-doped ultrathin epitaxial channel grown by low-temperature UHV-CVD; this allows the channel region to be doped with boron with high precision. The boron concentration and epitaxial layer thickness can be chosen independently, and so it is easy to adjust the threshold voltage of the buried-channel p-MOSFETs with n-type polysilicon gates. It was confirmed that choosing an ultrathin epitaxial layer at 10 nm leads to suppression of the short-channel effects in buried-channel p-MOSFETs with gate length down to 0.15 μm, while maintaining an appropriate value of threshold voltage     

Polymers degradable under environmental conditions through end-modification of poly(α-methylstyrene) derivatives

To induce degradabilities in polymers in response to environmental conditions, the end-modification reactions of poly(α-methylstyrene) derivatives were carried out. When diphenylphosphine chloride was used as a modifier for the living end of para-substituted PMS, the coupling efficiency was ca. 50%. 2-Phenylallyl halide derivatives such as 2-phenylallyl bromide, 2-(4-tolyl)allyl bromide, and α-trifluoromethylstyrene were found to be suitable end-modification agents. For example, ω-2-phenylallyl PMS was prepared with almost quantitative functionality by the reaction of the living PMS with 2-phenylallyl bromide. In a similar way, ω-3,3-difluoro-2-phenylallyl and ω-2-(4-tolyl)allyl PMS derivatives were synthesized. Based on thermogravimetric analysis, onset of the degradation temperature of the end-modified PMS derivatives decreased in the following order: ω-hydrogen- > ω-3,3-difluoro-2-phenylallyl- > ω-2-phenylallyl- > ω-2-(4-tolyl)allyl-PMS. Actually, the onset temperature of ω-2-(4-tolyl)allyl-PMS derivatives was 50°C lower than that of ω-H-PMS derivatives. These results indicate that the active species is produced effectively at the end unsaturated bond, which initiates the depolymerization of the polymer at rather low temperatures. Ionic degradation of these polymers was also investigated using butyllithium as an anionic initiator and methanesulfonic acid as a cationic initiator. Tendencies similar to the thermal degradation were observed. Therefore, it is concluded that a 2-phenylallyl substituent at the end of the PMS chain induces effective degradation through several mechanisms such as radical, anionic and cationic depolymerization reactions.     

Changes in capacitance and dielectric dissipation factor of water‐treed XLPE with applied voltage

The capacitance C and dielectric dissipation factor tan δ of a water‐treed XLPE sheet sample have been measured under the application of 100 V or 1 kV at 60 Hz. The values of C and tan δ at 1 kV are much larger than those at 100 V. The value of tan δ gradually decreases with the length of exposure to a voltage of 1 kV. On the other hand, C is almost constant versus the exposure time. The results have been discussed on the basis of a model in which filling of channels interconnecting voids by water is taken into account. It has been found that the increase of C and tan δ is caused by the growth of the water‐filled channel region on the application of voltage. The gradual decrease in tan δ with the exposure time is explained by the change in the conductivity of the water‐filled channel region, as a result of which the relaxation time shifts to higher frequencies. © 2003 Wiley Periodicals, Inc. Electr Eng Jpn, 144(1): 12–20, 2003; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10160     

Quantum nondemolition measurement of the photon number in a Josephson-junction cavity

This paper proposes a quantum nondemolition measurement of the photon number in a Josephson-junction cavity. Under a current-biased Josephson junction with small capacitance, the Josephson phase fluctuates quantum-mechanically around its classical value due to the charging effect, and it couples to the photons in the junction cavity nonlinearly, which is necessary for the quantum nondemolition measurement. We show that the photon number in the junction cavity can be nondestructively measured by detecting the fluctuation of Josephson supercurrent through the junction.     

H2 sensors using Fe2O3-based thin film

This paper describes the fabrication procedure as well as the sensing properties of new hydrogen sensors using Fe₂O₃-based thin film. The film is deposited by the r.f. sputtering technique; its composition is Fe₂O₃, TiO₂(5 mol%) and MgO(0–12 mol%). The conductance change of the film is examined in various test gases. The sensitivity to hydrogen gas is enhanced by treating the film in vacuum at 550 °C for 4 h and then in air at 700 °C for 2 h. The sputtered film is identified to be polycrystalline -Fe₂O₃ based on X-ray diffraction patterns. However, the surface layer is considered to be changed to Fe₃O₄ after heating in vacuum and then to γ-Fe₂O₃ after heating in air. The film is thus a multilayer one with a thin γ-Fe₂O₃ layer on a -Fe₂O₃ layer. The sensing mechanism is discussed based on measurements of the physical properties of the film, such as the temperature dependence of the sensor conductance, X-ray diffraction pattern, surface morphology, RBS (Rutherford back-scattering) spectrum and optical absorption spectrum.     

Electrochemical polymerization of helical poly(2-methoxyaniline) doped with β-cyclodextrin sulfate: pH driving the opposition of induced circular dichroism

Summary  Optically active poly(2-methoxyaniline) (PMOA) was synthesized by electrochemical polymerization of 2-methoxyaniline in the presence of β-cyclodextrin sulfate (CDS). The synthesized PMOA films were characterized by induced circular dichroism (ICD) and UV-vis spectra. PMOA films showed a mirror-imaged ICD spectrum while they were respectively prepared at pH 3 and lower pH values, which suggested that opposite one-perfected helical handedness was induced into PMOA. Nevertheless, post-treatments, such as dedoping, redoping and thermo-treating, seemed no influence on helical handedness of PMOA.     

The impact of scaling down to deep submicron on CMOS RF circuits

Recent papers reporting CMOS RF building blocks have aroused great expectations for RF receivers using deep-submicron technologies. This paper examines the trend in CMOS scaling, in order to establish the required current levels and achievable performance for different feature sizes, if robust, easily manufacturable designs are to be implemented for cellular applications. The boundary conditions (system-level constraints) for such designs, in terms of the number of trimmed and untrimmed external components and the roles they play in relaxing active circuit requirements, are emphasized throughout to make comparison of active RF circuits meaningful. At 1 GHz, 0.25-μm CMOS appears to be the threshold for robust, low-NF RF front ends with current consumption competitive with today's BJT implementations