Real-time IR and mass spectroscopic study of the reaction process of WF6 and a-Si:H:F

The deposition process of W from WF₆ onto a-Si:H:F film was studied by polarization modulation IR spectroscopy combined with quadruple mass spectrometry. The IR spectrum of the a-Si:H:F film formed by the spontaneous chemical deposition method (deposition temperature 373 K) showed that such fluorinated and hydrogenated Si species as —SiF₂, —SiF₂H and —SiH₂ were incorporated in the film. The lowest temperature at which W was deposited was 403 K. The intensity reduction of the IR bands due to the hydrogenated and fluorinated Si species as well as the evolutionary behaviour of the reaction products SiF₄ and H₂ depended upon the reaction temperature. At temperature between 403 K and 423 K, the IR band intensity of the —SiH₂ species remained unchanged in early stages of WF₆ exposure, while the bands due to —SiF₂ and —SiF₂H species decreased linearly with exposure time. No evolution of H₂ was observed as long as the —SiH₂ species remained unchanged, through SiF₄ evolved into the gas phase just after the beginning of the exposure. These results suggest that WF₆ reacts preferentially with the fluorinated silicon species in the films.     

Diffusion of aluminum into silicon nitride films

Aluminum diffusion into silicon nitride films at temperatures in the range 450–530°C was studied by Auger electron spectroscopy in conjunction with depth profiling. The activation energy for the diffusion of aluminum and the diffusion coefficient were found to be 2.0±0.3 eV and (7.3±3.5) x 10^-3 cm² s^-1, respectively. The chemical effects in the KLL aluminum Auger spectra together with the compositional depth profiles suggest that the migration of aluminum is dominated by volume diffusion which involves the reaction of aluminum with oxygen.     

Expression of ubiquitin protein in each organ at death from hypothermia

To isolate DNA for nucleoside analog incorporation studies, many investigators use RNase A to remove RNA from total cellular nucleic acid. We observed persistence of ribonucleotides from RNA in nucleic acid samples treated with RNase A alone. Although incubation of [5-3H]uridine-labeled nucleic acid with 50 microg/ml RNase A decreased tritium by 97%, HPLC analysis of the resulting DNA preparation digested to nucleosides revealed high levels of ribonucleosides. Increasing RNase A 10-fold (500 microg/ml) effected only a 1.7-fold reduction in ribonucleosides. Overall, the level of ribonucleosides was one-fourth that of the deoxynucleosides, primarily due to the high levels of guanosine. It was hypothesized that the ribonucleosides originated from guanosine-rich tracts of RNA since RNase A cuts preferentially 3' to pyrimidine monophosphates and to some extent after AMP. The addition of 0.05 microg/ml RNase T1, which preferentially cleaves RNA 3' to GMP, decreased total ribonucleosides by nearly 20-fold. In conclusion, we have developed a rapid method which removes greater then 99% of cellular RNA from nucleic acid extracts and a reversed-phase HPLC procedure that detects RNA contamination more sensitively than [5-3H]uridine labeling. These methods are useful for the determination of analog incorporation into DNA, especially for agents which incorporate into both DNA and RNA.     

Effect of off-orientation of seed crystal on silicon carbide (SiC) single-crystal growth on the (11 $$\bar 2$$ 0) surface0) surface

The effect of off-orientation growth has been investigated in terms of stacking fault formation during physical vapor transport (PVT) growth of silicon carbide (SiC) single crystals on the (11 0) seed crystal surface. Occurrence of stacking fault formation is largely dependent on the direction of off-orientation, and basal plane stacking fault density is significantly reduced by growing the crystals on a (11 0) seed crystal off-oriented toward 〈0001〉. The density of the basal plane stacking faults rapidly decreases from 100–150 cm⁻¹ to ∼10 cm⁻¹ as the degree of off-orientation is increased from 0 to 10 deg. The results are interpreted in the framework of microscopic facet formation during PVT growth, and the introduction of off-orientation of seed crystal is assumed to prevent (01 0) and (10 0) microfacet formation on the (11 0) growing surface through modification of the surface growth kinetics and to suppress the stacking fault formation. An erratum to this article is available at .     

Estimation of heat evolution during viscoelastic crack propagation by liquid crystal film technique

Heat generated during dynamic crack propagation in viscoelastic solids was investigated by visible liquid crystal film technique to observe the thermal boundary front emanating from a running crack tip. The crack propagation velocity was also measured by the velocity gauge method. The heat so estimated is correlated with the crack propagation velocity.     

Temperature dependence of Rresistivities of SnO2-based gas sensors exposed to Co,H2, and C3H8 gases

The temperature dependence of resistivities of gas sensors made of SnO₂, Pd-doped SnO₂, and ThO₂-doped SnO₂ with Pd has been investigated in air containing reducing gases such as CO, H₂, and C₃H₈. The curves for ThO₂-doped sensors were significantly influenced by the reducing gases as compared to the sensors without ThO₂. From these results, it is found that in Pd-doped SnO₂ sensors the dopant plays an important role in oxidizing the surface of SnO₂ above 170°C, and that the addition of ThO₂ to Pd-doped SnO₂ enhances the effects of Pd by removing the adsorbed hydroxyl on SnO₂. It is also apparent that the interactions between reducing gases in air and SnO₂-based sensors depend upon the oxidizing rates of the surface of SnO₂, as well as the amounts of the adsorbed hydroxyl on SnO₂.     

Strain rate effects on viscoelastic crack bifurcation

The effects of applied strain rate on the viscoelastic crack bifurcation phenomenon in Polymethyl Methacrylate (PMMA) were investigated. It was still verified that the product $\text{σ}{}_{\mathrm{f}}\text{C}{}_{\mathrm{b}}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$ was constant, as was already observed by Congleton and Petch, and Anthony, Chubb and Congleton, for brittle elastic materials, for any strain rate, where σ_f = the gross fracture stress and C_b= the main crack length until the bifurcation starts. However, it was found that the higher strain rate increases the main crack length C_b resulting in the decrease in the gross fracture stress σ_f and vice versa. This might be interpreted that the higher stress concentration at the initiation crack tip, which is realized by becoming more brittle due to the higher strain rate owing to the predominance of the elastic element in the viscoelastic material, decreases the gross fracture stress leading to the longer main crack length.     

INITIATION AND GROWTH OF SMALL CRACKS IN DIRECTIONALLY SOLIDIFIED MAR-M247 UNDER CREEP-FATIGUE. PART I: EFFECT OF MICROSTRUCTURE

This paper deals with the initiation and growth of small cracks in a directionally solidified superalloy, Mar-M247.     

Image-transmission of radiotherapy planning using 64kbps-ISDN videophone

We carried out the image-transmission using the 64kbps-ISDN and two terminals of the videophone installed in Osaka Teishin Hospital and Department of Radiation Oncology, Biomedical Research Center, Osaka University Medical School. The frame speeds (sec./frame) of the videophone are 1.2 for standard resolution with 320 x 200 matrix and 5.0 for high resolution with 640 x 400 matrix. Although the image with 640 x 400 matrix is not enough for the radiation diagnosis such as the chest radiogram, the image is useful for the radiation therapy planning. This system is easy to operate, and will be widely distributed in near future.