High-strength ZrB2-based ceramics prepared by reactive pulsed electric current sintering of ZrB2–ZrH2 powders

Fully densified ZrB₂-based ceramic composites were produced by reactive pulsed electric current sintering (PECS) of ZrB₂–ZrH₂ powders within a total thermal cycle time of only 35 min. The composition of the final composite was directly influenced by the initial ZrH₂ content in the starting powder batch. With increasing ZrH₂ content, ZrB₂–ZrO₂, ZrB₂–ZrB–ZrO₂ and ZrB₂–ZrB–Zr₃O composites were obtained. The ZrB₂–ZrB–ZrO₂ composite derived from a 9.8 wt% ZrH₂ starting powder exhibited an excellent flexural strength of 1382 MPa combined with a Vickers hardness of 17.1 GPa and a fracture toughness of 5.0 MPa m^1/2. The high strength was attributed to a fine grain size and the removal of B₂O₃ through reaction with Zr. Higher ZrH₂ content starting powders were densified through solution-reprecipitation resulting in the formation of coarser angular ZrB₂–ZrB composites with a Zr₃O grain boundary phase with a fracture toughness of 5.0 MPa m^1/2 and an acceptable strength in the 852–939 MPa range.     

The use of spatial impulse responses to characterise flexible forming processes with mobile tools

A novel test method for the characterisation of flexible forming processes is proposed and applied to four flexible forming processes: Incremental Sheet Forming (ISF), conventional spinning, the English wheel and power hammer. The proposed method is developed in analogy with time-domain control engineering, where a system is characterised by its impulse response. The spatial impulse response is used to characterise the change in workpiece deformation created by a process, but has also been applied with a strain spectrogram, as a novel way to characterise a process and the physical effect it has on the workpiece. Physical and numerical trials to study the effects of process and material parameters on spatial impulse response lead to three main conclusions. Incremental sheet forming is particularly sensitive to process parameters. The English wheel and power hammer are strongly similar and largely insensitive to both process and material parameters. Spinning develops in two stages and is sensitive to most process parameters, but insensitive to prior deformation. Finally, the proposed method could be applied to modelling, classification of existing and novel processes, product-process matching and closed-loop control of flexible forming processes.     

An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells

In this study, we investigate the effect of annealing and nitrogen amount on electronic transport properties in n- and p-type-doped Ga_0.68In_0.32N_yAs_{1 − y}/GaAs quantum well (QW) structures with y = 0%, 0.9%, 1.2%, 1.7%. The samples are thermal annealed at 700°C for 60 and 600 s, and Hall effect measurements have been performed between 10 and 300 K. Drastic decrease is observed in the electron mobility of n-type N-containing samples due to the possible N-induced scattering mechanisms and increasing effect mass of the alloy. The temperature dependence of electron mobility has an almost temperature insensitive characteristic, whereas for p-type samples hole mobility is decreased drastically at T > 120 K. As N concentration is increased, the hole mobility also increased as a reason of decreasing lattice mismatch. Screening effect of N-related alloy scattering over phonon scattering in n-type samples may be the reason of the temperature-insensitive electron mobility. At low temperature regime, hole mobility is higher than electron mobility by a factor of 3 to 4. However, at high temperatures (T > 120 K), the mobility of p-type samples is restricted by the scattering of the optical phonons. Because the valance band discontinuity is smaller compared to the conduction band, thermionic transport of holes from QW to the barrier material, GaAs, also contributes to the mobility at high temperatures that results in a decrease in mobility. The hole mobility results of as-grown samples do not show a systematic behavior, while annealed samples do, depending on N concentration. Thermal annealing does not show a significant improvement of electron mobility.     

Anions effect on the low temperature growth of ZnO nanostructures

Seed mediated aqueous chemical growth (ACG) route was used for the growth of ZnO nanostructures on Si substrate in four different growth mediums. The growth medium has shown to affect the morphology and the size of the different nanostructures. We observed that the medium containing zinc nitrate anions yields the nanorods, in a medium containing zinc acetate anions nano-candles are obtained. While in a medium containing zinc chloride anions ZnO nano-discs were obtained and in a medium containing zinc sulfate anions nano-flakes are achieved. Growth in these different mediums has also shown effect on the optical emission characteristics of the different ZnO nanostructures.     

A study of profiled handoff for Diffserv‐based mobile nodes

There is a growing interest in providing Internet services to the mobile nodes. When mobile nodes travel from one router's service area to another, the time‐sensitive applications may see degradation in service. We investigate into the effects of handoff on service quality of mobile nodes. Several experiments are conducted using various packet metering and marking schemes with or without transferring profiles to the new router. Results indicate the relative instability period following handoff, loss of packets and delay encountered by packets in profiled or un‐profiled handoffs, leading to determining suitable mix of metering and marking schemes with or without context transfer. Copyright © 2002 John Wiley & Sons, Ltd.