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11.
Lucas Alves Da Silva Eric Dekneuvel Alexandre Lewicki Benjamin Nicolle Gilles Jacquemod 《Microelectronics Journal》2012,43(2):98-109
In this paper, we propose to develop a hierarchical library associated with various simulators that can be used in a single platform, called TrustMe-ViP, which enables a unique simulation framework and full model interoperability. Such platform is dedicated to complex SoC design, such as trusted personal devices where cost and time-to-market are very important constraints. To validate this methodology, we present the estimation of BER and power consumption for a Bluetooth transceiver. 相似文献
12.
João Serra Sara Sequeira Ismael Domingos Ana Paracana Ermelinda Maçôas Luís V. Melo Bernardo J. Pires Susana Cardoso Diana C. Leitao Helena Alves 《Advanced functional materials》2021,31(47):2105638
Light detection technologies are of interest due to their applications in energy conversion and optical communications. Single-crystal organic semiconductors, such as rubrene, present high detectivities and charge carrier mobility, making them attractive for light-sensing applications. Growth of high crystallinity organic crystals is achieved using vapor processes, forming crystals of arbitrary shapes and orientations and requiring posterior patterning processes. However, patterning the organic semiconductors using industry-standard microfabrication techniques is not straightforward, as these often cause irreversible damage to the crystals. Here the fabrication of patterned micrometric rubrene photosensors is demonstrated through a combination of photolithography and Reactive Ion Etching steps. Protective layers during microfabrication minimize degradation of optoelectronic properties of the organic single crystals during fabrication. Crystals undergoing the patterning process presented a survival rate of 39%. Photoresponse values of up to 41 mA W−1 are obtained under illumination at 500 nm. This opens a route for the industrial-scale fabrication process of high-performance optoelectronic devices based on organic crystals semiconductors. 相似文献
13.
Luís Nero Alves Rui L. Aguiar Dinis M. Santos 《Analog Integrated Circuits and Signal Processing》2002,33(2):127-136
This paper discusses bandwidth problems associated with second-generation current conveyors (CCII). In particular, our work is centered in high-capacitance applications, and has been oriented for wireless optical links and applied physics. We discuss techniques for improving bandwidth in these CCIIs, and develop a new CCII structure with larger bandwidth than traditional circuits. These circuits are then compared in terms of their noise and dynamic range characteristics. A test circuit was developed to verify these different bandwidth behaviors. 相似文献
14.
E.M. Lopes R.S. Ywata N. Alves F.M. Shimizu D.M. Taylor C.P. Watson A.J.F. Carvalho J.A. Giacometti 《Organic Electronics》2012,13(10):2109-2117
The admittance spectra and current–voltage (I–V) characteristics are reported of metal–insulator–metal (MIM) and metal–insulator–semiconductor (MIS) capacitors employing cross-linked poly(amide–imide) (c-PAI) as the insulator and poly(3-hexylthiophene) (P3HT) as the active semiconductor. The capacitance of the MIM devices are constant in the frequency range from 10 Hz to 100 kHz, with tan δ values as low as 7 × 10−3 over most of the range. Except at the lowest voltages, the I–V characteristics are well-described by the Schottky equation for thermal emission of electrons from the electrodes into the insulator. The admittance spectra of the MIS devices displayed a classic Maxwell–Wagner frequency response from which the transverse bulk hole mobility was estimated to be ∼2 × 10−5 cm2 V−1s−1 or ∼5 × 10−8 cm2 V−1s−1 depending on whether or not the surface of the insulator had been treated with hexamethyldisilazane (HMDS) prior to deposition of the P3HT. From the maximum loss observed in admittance-voltage plots, the interface trap density was estimated to be ∼5 × 1010 cm−2 eV−1 or ∼9 × 1010 cm−2 eV−1 again depending whether or not the insulator was treated with HMDS. We conclude, therefore, that HMDS plays a useful role in promoting order in the P3HT film as well as reducing the density of interface trap states. Although interposing the P3HT layer between the insulator and the gold electrode degrades the insulating properties of the c-PAI, nevertheless, they remain sufficiently good for use in organic electronic devices. 相似文献
15.
The throughput of conventional automatic-repeat-request (ARQ) protocols, such as the stop-and-wait, go-back-N , and selective repeat, can be improved by dynamically adapting the protocol block length so that it approaches the optimum value for varying channel bit error rates. A very simple algorithm to implement such an adaptive scheme is presented. The algorithm assumes a known block error rate, estimates the bit error rate, and determines the best block length. Results of a simulation study show that in spite of its simplicity, the algorithm performs well 相似文献
16.
17.
José Vicente Calvano Antônio Carneiro de Mesquita Filho Vladimir Castro Alves Marcelo Soares Lubaszewski 《Microelectronics Journal》2002,33(10):823-834
This work presents a method for synthesizing testable continuous-time linear time-invariant electrical networks using 1st order blocks for the implementation of analog linear circuits. A functional-structural fault model for the block, and a fault dictionary are proposed together with a simple set of test vectors. The method allows, also, the fault grade evaluation for the modeled faults. The results obtained from the two application examples have shown the suitability of the approach as a design for test method for analog circuits. 相似文献
18.
This paper describes the conception and analysis of a unidirectional hybrid three-phase rectifier suitable for medium- and high-power applications. The rectifier is composed of a single-switch diode bridge boost-type rectifier in parallel with a pulsewidth modulation (PWM) three-phase unidirectional boost rectifier. The objective is to obtain a structure capable of providing sinusoidal input currents with low harmonic distortion and dc output voltage regulation. The diode rectifier operates at low frequency and has a higher output power rating. Therefore, the PWM unidirectional rectifier is designed to operate with a small power rating and at a high switching frequency. The total harmonic distortion of the proposed structure varies between 0% and 32%, depending only on the amount of power processed by the PWM three-phase unidirectional rectifier. The rectifier topology conception, principle of operation, control scheme, and simulation and experimental results of a 20-kW laboratory prototype are also presented in this paper. 相似文献
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20.
da Silva Breno Augusto Tabosa Thome Pascoalino Liege Aguiar de Souza Ricardo Luiz Muniz Edvani Curti Curti Priscila Schroeder 《Polymer Bulletin》2020,77(3):1157-1176
Polymer Bulletin - In this work, electrospun fibers of poly(butylene adipate-co-terephthalate) (PBAT) and poly(N-isopropylacrylamide) (PNIPAAm) blends, PBAT/PNIPAAm, with different mass ratios,... 相似文献