Near-field corrections to site attenuation

The theoretical model used for calculating normalized site attenuation for broadband antennas in ANSI C63.4-1992 and for antenna calibration in ANSI C63.5-1988 includes only the radiation terms in the electric field. The omission of the near field terms leads to errors of as much as 2.0 dB at 30 MHz for horizontally polarized antennas separated by 3 m. Corrected values of normalized site attenuation and E _D^max are presented for the 30-300 MHz frequency range     

Measurement of the required cross-polar protection ratio in G-PALTV FM satellite transmissions planning

A measurement campaign using live TV broadcast satellite signals and receiving commercial equipment has been carried out to study the required cross-polar protection ratio at the receiving antenna in satellite transmission planning. This experiment provides useful and realistic conclusions for the optimum spectrum allocation of TV channels in broadcasting satellite systems, as for example, the frequency offset required between cross-polar channels depending on the cross-polar rejection at the receiving antenna, for a certain grade of video signal impairment due to the cross-polar channel interference effects, and taken also into account the noise contribution on the signal     

An optical instrumentation using a sensor with a sensordummyagainst noises on sensor and transmission line

This short paper discusses the method of effectively canceling equal status normal mode noise not only on a sensor line but also on a transmission line of an optical instrument using a sensor with a sensordummy resistance     

Crosstalk between microstrip transmission lines

Methods for prediction of crosstalk between microstrip transmission lines are reviewed and simplified for the weak-coupling case. Classical coupled transmission line theory is used for uniform lines, and potential and induced EMF methods are used for crosstalk between nonuniform lines. It is shown that the potential method is equivalent to classical coupled transmission line theory for the case of uniform lines. An experiment was performed for uniform coupled microstrip lines for frequencies from 50 MHz to 5 GHz, and good agreement between theory and measurement was obtained for both near- and far-end crosstalk     

High-frequency analysis of the Ellipticus antenna

Efficient numerical solution techniques have been developed and used to examine the electromagnetic fields that can be developed in the working volume of the CW Ellipticus antenna operated at frequencies from 100 kHz to 1 GHz. An exponentially tapered transition section is designed to obtain the desired illumination pattern in the working volume. The input transition section is needed for impedance matching and to drive efficiently the Ellipticus antenna. A parametric study is performed to ascertain the performance of the Ellipticus antenna for frequencies up to 1 GHz     

Microscopic simulation of electronic noise in semiconductormaterials and devices

We present a microscopic interpretation of electronic noise in semiconductor materials and two-terminal devices. The theory is based on Monte Carlo simulations of the carrier motion self-consistently coupled with a Poisson solver. Current and voltage noise operations are applied and their respective representations discussed. As application we consider the cases of homogeneous materials, resistors, n⁺nn ⁺ structures, and Schottky-barrier diodes. Phenomena associated with coupling between fluctuations in carrier velocity and self-consistent electric field are quantitatively investigated for the first time. At increasing applied fields hot-carrier effects are found to be of relevant importance in all the cases considered here. As a general result, noise spectroscopy is found to be a source of valuable information to investigate and characterize transport properties of semiconductor materials and devices     

1/f noise sources

This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an α value with a magnitude in the order of 10^-4. Damaging the crystal has a strong influence on α, α may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The α values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices     

Localization of deformation and its effect on the course of processes of pressure working metals

The author examines the problems of spontaneous and stationary localization of deformation on the development of plastic yielding in pressure working of metals. It is established that localization of plastic yielding results in the dispersion of the geometrical dimensions, structure, texture and properties, and also in changes in their general level. Possible methods of affecting the deformation region are discussed with special reference to controlling the development of localization of plastic yielding and properties of the component.Translated from Problemy Prochnosti, No. 2, pp. 89–92, February, 1994.