Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

Isolation and characterization of three Dictyostelium myosin-I isozymes

Using ion exchange chromatography and an ATP-dependent actin precipitation step, we have isolated three myosin-I isozymes that, together, account for most of the K+EDTA-ATPase activity recovered from extracts of Dictyostelium. The two major myosin-I isozymes, present in approximately equal amounts, had apparent molecular masses of 125 kDa on SDS gels and have been identified by amino acid sequence analysis as the products of the Dictyostelium myosin-IB (DMIB) and myosin-ID (DMID) genes. DMIB, with a specific K+EDTA-ATPase activity 10-fold higher than DMID, was responsible for most of the activity in cell extracts. The third isozyme, present in low amounts, had an apparent molecular mass of 137 kDa on SDS gels and is too large to be the product of any of the known myosin-I genes. DMIB eluted from DE53 cellulose columns as two distinct peaks (II and III). Addition of the phosphatase inhibitor okadaic acid to the extraction buffer increased the fraction of DMIB recovered from growth phase cells in peak III from 35 to 70%. DMIB isolated from peak III, but not from peak II, displayed a significant level of actin-activated MgATPase activity. These results indicate that peak III represents a phosphorylated, actin-activatable form of DMIB.     

Modeling of a power electronic converter for EMC in the conduction emission frequency band

With the advancement of high‐frequency switching devices, electromagnetic interferences (EMI) have become problems in power electronic converter designs. It is necessary for an electromagnetic compatibility (EMC) design to prospect and consider its possible EMI levels. This paper describes how to compute effects from a power converter to an object point to reduce conduction EMI noises effectively by an appropriate design. Modeling techniques for converter elements are discussed for a model in the conduction emission frequency band by the parameter tuning method and for line constants by an analytical derivation. Then a derived model is simulated for harmonic distributions of loop currents and their magnetic fields. © 2002 Scripta Technica, Electr Eng Jpn, 139(1): 44–50, 2002: DOI 10.1002/eej.1145     

A process algebraic approach to the specification and analysis ofresource-bound real-time systems

Recently, significant progress has been made in the development of timed process algebras for the specification and analysis of real-time systems. This paper describes a timed process algebra called ACSR, which supports synchronous timed actions and asynchronous instantaneous events. Timed actions are used to represent the usage of resources and to model the passage of time. Events are used to capture synchronization between processes. To be able to specify real systems accurately, ACSR supports a notion of priority that can be used to arbitrate among timed actions competing for the use of resources and among events that are ready for synchronization. The paper also includes a brief overview of other timed process algebras and discusses similarities and differences between them and ACSR     

A theoretical and numerical analysis of the measured equation ofinvariance

The measured equation of invariance (MEI) has been previously introduced to efficiently and accurately handle the boundary truncation for finite methods. The present authors give a theoretical analysis that provides several important insights into the capabilities of the MEI. From the numerical study, they can explain why the MEI works better than one would expect. Both the theoretical and the numerical analyses demonstrate that the accuracy of the solution is dependent on the electrical size of the geometry as well as the distance between the mesh boundary and the geometry. From the analysis, the authors propose a new set of metrons that is less sensitive to the excitation than the previously proposed sinusoidal metrons     

A partitioning technique for the finite element solution ofelectromagnetic scattering from electrically large dielectric cylinders

A finite element partitioning scheme has been developed to reduce the computational costs of modeling electrically large geometries. In the partitioning scheme, the cylinder is divided into many sections. The finite element method is applied to each section independent of the other sections, and then the solutions in each section are coupled through the use of the tangential field continuity conditions between adjacent sections. Since the coupling matrix is significantly smaller than the original finite element matrix, it is expected that both the CPU time and memory costs can be significantly reduced. The partitioning scheme is coupled to the bymoment method to account for the boundary truncation. Numerical results are presented to demonstrate the efficiency and accuracy of the method     

Ultrahigh and controllable drain current peak-to-valley ratio innegative resistance field-effect transistors with a strained InGaAschannel

Negative resistance field-effect transistor (NERFET) devices using either strained InGaAs or unstrained GaAs channel layers have been fabricated. The strained InGaAs channel NERFET's show strong negative differential resistance and large drain current peak-to-valley ratio. The peak-to-valley ratio of the InGaAs channel NERFET is more than 3000 at room temperature and larger than one million (10⁶) at 77 K. The peak-to-valley ratio is controllable by adjusting the collector voltage     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

Integration of mobile vehicles for automated material handlingusing Profibus and IEEE 802.11 networks

This paper focuses on a method to integrate mobile devices such as a mobile robot, automated guided vehicle, and unmanned container transporter to form an automated material handling system. In this paper, the stationary devices are connected via a Profibus network while the mobile devices are communicating via an IEEE 802.11 wireless LAN. In order to integrate these two networks, a protocol converter is developed on a PC platform that runs two interacting processes with shared internal buffers. The protocol converter performs a role of translator between two different protocols by converting the format of a data frame. In addition to this basic conversion function, the protocol converter has a virtual polling algorithm to reduce the uncertainty involved in accessing the wireless network. Finally, the integrated network. of Profibus and IEEE 802.11 is experimentally evaluated for its data latency and throughput, which shows the feasibility of the Profibus-IEEE 802.11 network for industrial applications involving mobile devices     

Metal-semiconductor-metal photodetectors with InAlGaP capping and buffer layers

To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In/sub 0.5/(Al/sub 0.66/Ga/sub 0.34/)/sub 0.5/P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In/sub 0.5/(Al/sub 0.66/Ga/sub 0.34/)/sub 0.5/P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70/spl deg/C, respectively.