全文获取类型
收费全文 | 228166篇 |
免费 | 18986篇 |
国内免费 | 11443篇 |
专业分类
电工技术 | 14084篇 |
技术理论 | 9篇 |
综合类 | 15648篇 |
化学工业 | 34519篇 |
金属工艺 | 14071篇 |
机械仪表 | 14466篇 |
建筑科学 | 14798篇 |
矿业工程 | 6629篇 |
能源动力 | 5408篇 |
轻工业 | 16211篇 |
水利工程 | 5286篇 |
石油天然气 | 11627篇 |
武器工业 | 1976篇 |
无线电 | 24071篇 |
一般工业技术 | 31641篇 |
冶金工业 | 13376篇 |
原子能技术 | 5865篇 |
自动化技术 | 28910篇 |
出版年
2024年 | 1075篇 |
2023年 | 3259篇 |
2022年 | 6976篇 |
2021年 | 9079篇 |
2020年 | 6776篇 |
2019年 | 5468篇 |
2018年 | 6694篇 |
2017年 | 7367篇 |
2016年 | 6754篇 |
2015年 | 8247篇 |
2014年 | 10478篇 |
2013年 | 12612篇 |
2012年 | 14471篇 |
2011年 | 15150篇 |
2010年 | 13487篇 |
2009年 | 13188篇 |
2008年 | 13380篇 |
2007年 | 12542篇 |
2006年 | 11436篇 |
2005年 | 9719篇 |
2004年 | 7501篇 |
2003年 | 6949篇 |
2002年 | 7352篇 |
2001年 | 6752篇 |
2000年 | 5290篇 |
1999年 | 3876篇 |
1998年 | 2747篇 |
1997年 | 2295篇 |
1996年 | 2042篇 |
1995年 | 1785篇 |
1994年 | 1506篇 |
1993年 | 1291篇 |
1992年 | 1256篇 |
1991年 | 1121篇 |
1990年 | 1132篇 |
1989年 | 1045篇 |
1988年 | 919篇 |
1987年 | 858篇 |
1986年 | 783篇 |
1985年 | 721篇 |
1984年 | 712篇 |
1981年 | 673篇 |
1979年 | 751篇 |
1978年 | 777篇 |
1977年 | 739篇 |
1976年 | 755篇 |
1975年 | 713篇 |
1974年 | 719篇 |
1973年 | 723篇 |
1972年 | 705篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
31.
Albul V. I. Bychkov V. B. Gusev K. E. Demidov V. S. Demidova E. V. Kurchanov A. F. Luk'yashin V. E. Sokolov A. Yu. 《Measurement Techniques》2003,46(8):810-814
A monitor is proposed based on ultrasonic production when ionizing radiation passes through a medium. The recording element is a 0.2 mm aluminum plate mounted in a ceramic acoustic converter AC in the form of a wedge of thickness 2 mm. The low plate thickness minimizes the beam parameter distortion, while special technology used in the AC provides high sensitivity. The device has been calibrated in the proton beam from the ITEP accelerator at 200 MeV with 2·109–6·1010 particles in a pulse and a pulse length of 70 nsec. 相似文献
32.
Polyaryloxydiphenylsilanes were prepared from phosphorus‐containing diols and diphenydichlorolsilane through solution polymerization. With a stoichiometric imbalance in feed monomers, the resulting polymers exhibited moderate melting points and good processing properties. The polymers prepared showed initial decomposition temperatures above 340 °C, excellent thermal stability, high char yields at 850 °C and very high limited oxygen index values of 56–59. The polymers' char yields and their (P + Si) contents showed linear relationships. © 2003 Society of Chemical Industry 相似文献
33.
34.
35.
E. A. Gurieva P. P. Konstantinov L. V. Prokof D. A. Pshenaĭ-Severin M. I. Fedorov Yu. I. Ravich 《Semiconductors》2006,40(7):763-767
The coefficients of thermopower and electrical and thermal conductivity in the PbTe0.8Se0.1 S 0.1 solid solution with electron concentration (4.6–54) × 1018 cm?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb1?x SnxTe1?x Sex alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L0 numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L0 = 0.75 is obtained for a lightly doped sample at ~130 K. 相似文献
36.
This letter focuses on the performance analysis of the decorrelating receiver in multipath Rician faded CDMA channels. M-ary QAM scheme is employed to improve the spectral efficiency. Approximate expressions are first derived for the two performance indexes: the average symbol error rate (SER) and the average bit error rate (BER) when the decorrelating-first receiver perfectly knows the channel information of the user of interest. To achieve desirable closed-form expressions of the SER and the BER, we exploit results in large system analysis and make assumptions of a high signal-to-interference ratio (SIR) and/or a small Rician K-factor. To measure the receiver performance in the practical scenario, we further derive expressions to approximate the average SER and BER of the decorrelating-first scheme with channel uncertainty. Simulation results demonstrate that the analytical results can also be employed to evaluate the performance of the combining-first receiver. 相似文献
37.
N.S. Chen S.F. Yu 《Photonics Technology Letters, IEEE》2004,16(7):1610-1612
The effect of external optical feedback on the transient response of antiresonant reflecting optical waveguide (ARROW) vertical-cavity surface-emitting lasers (VCSELs) is studied. It can be shown that the proper design of ARROW can suppress the excitation of high-order transverse leaky mode as well as increase the critical feedback strength so that stable high-power single-mode operation of VCSELs can be obtained even under the influence of strong external optical feedback. 相似文献
38.
硅微机械梳齿静电谐振器的建模与分析 总被引:5,自引:2,他引:3
基于参数化的计算机辅助设计(CAD)软件,对硅微机械梳齿静电谐振器进行了实体建模,以有限元分析软件为工具,进行了谐振器的模态分析,静态分析和谐响应分析,初步揭示了谐振器的静、动态特性,有助于改善设计效率和质量,展示了计算机辅助工程(CAE)技术在微机电系统(MEMS)研究中的重要作用。 相似文献
39.
A.S. Fomichev I. David S.M. Lukyanov Yu.E. Penionzhkevich N.K. Skobelev O.B. Tarasov 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》1994,350(3):605-607
The mass and charge identification of secondary particles with Z < 4 by a large CsI(T1) scintillation detector is performed using pulse shape analysis and time-of-flight methods. The dependence of the light output on E, A and Z is studied in the energy range of 1–20 MeV/A and special attention is paid to the integration time of the photomultiplier anode signal. It is found that the behaviour of the calibration curves strongly depends on the choice of the integration time interval. 相似文献
40.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献