Development of silicon wafer packaging technology for deep UV LED

This paper reports a deep‐ultraviolet LED (deep‐UV‐LED) package based on silicon MEMS process technology (Si‐PKG). The package consists of a cavity formed by silicon crystalline anisotropic etching, through‐silicon vias (TSVs) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A deep‐UV LED die is directly mounted in the Si‐PKG by AuSn eutectic bonding without a submount. It has advantages in terms of size, heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. We confirmed a light output of 30 mW and effective reflection on Si (111) cavity slopes in the Si‐PKG. Based on simulation, further improvement of the optical output is expected by optimizing DUV‐LED die mount condition.     

Development of a Simplified Calculation Tool for Voltage Drop Caused by Transformer Inrush in Distribution System

It is well known that a voltage drop due to inrush current at an energizing transformer may at times interrupt electrical equipment. Generally, the voltage drop is calculated by using a sophisticated tool such as EMTP, so that the transformer saturation phenomenon has been properly represented. However, it is not practical for distribution system engineers to calculate the voltage drop with transformer inrush by using EMTP, because there are many network access requests needing such calculations with many kinds of transformers. Therefore, in this paper, a simplified and easy‐to‐use calculation tool for voltage drops caused by transformer inrush in a distribution system is developed. In order to understand the voltage drop by inrush current during the planning stage, it is formulated by considering the transformer saturation/unsaturation periods in each winding type. The newly developed tool is based on versatile spreadsheet software such as Microsoft Excel ýO.R. It can be used with accuracy similar to that of EMTP. © 2013 Wiley Periodicals, Inc. Electr Eng Jpn, 185(1): 36–47, 2013; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/eej.22394     

Relationship between electrode surface roughness and impulse breakdown voltage in vacuum gap of Cu and Cu-Cr electrodes

The relationship between the impulse breakdown voltage of vacuum gaps and electrode surface roughness was investigated for the purpose of controlling the surface roughness on HV conductors. The roughness of mechanically polished Cu and Cu-Cr electrodes was measured with a roughness meter, and the relationship between the breakdown voltage and surface roughness was obtained for plate-to-plate gaps. The discharge-conditioning effect increased with reduction in the surface roughness. The breakdown voltage depended not only on the roughness of the cathode but also on the anode surfaces. Reducing the surface roughness was found not to be an effective way to increase the breakdown voltage for non-uniform field gaps after discharge conditioning.     

Growth of highly strained GaInAs-GaAs quantum wells on patterned substrate and its application for multiple-wavelength vertical-cavity surface-emitting laser array

We carried out the growth of highly strained GaInAs-GaAs quantum wells (QWs) on a patterned substrate for extending emission wavelength on a GaAs substrate. We examined the shift of photoluminescence wavelength of the QWs and showed a large wavelength shift due to the spatial modulation in well thickness and indium composition. We demonstrated a single-mode multiple-wavelength vertical-cavity surface-emitting laser (VCSEL) array on a patterned GaAs substrate covering a new wavelength window of 1.1-1.2 /spl mu/m. By optimizing pattern shape, we achieved multiple-wavelength operation with widely and precisely controlled lasing wavelengths. The maximum lasing span is as large as 77 nm. We carried out a data transmission experiment through 5-km of single-mode fiber with a 2.5 Gb/s/channel. The total throughput reaches 10 Gb/s. The VCSEL-based wavelength-division-multiplexing (WDM) source would be a good candidate for WDM-LAN beyond 10 Gb/s.     

Study of shunt type SFCL equipped with electromagnetic repulsion switch for large capacity

Using a high‐temperature superconductor, we constructed and tested a model Superconducting Fault Current Limiter (SFCL). The SFCL that we proposed has a vacuum interrupter with electromagnetic repulsion mechanism. We set out to construct a high‐voltage‐class SFCL. We produced an electromagnetic repulsion switch equipped with a 24‐kV vacuum interrupter (VI). However, the opening speed becomes slower, because the larger vacuum interrupter needs a heavier‐weight contact. For this reason, the current which flows in a superconductor may not be interruptible within a half cycle of current. In order to solve this problem, it is necessary to change the design of the coil connected in parallel and to strengthen the electromagnetic repulsion force at the time of opening the vacuum interrupter. Thus, the design of the coil was changed, and in order to examine whether the problem is solvable, a current limiting test was conducted. We carried out a current limiting test using second‐generation (2G) HTS wire. The element used in this experiment has a stainless steel stabilizer on both sides of the wire. In the experiment we succeeded in interrupting the current of a superconductor within a half cycle. © 2010 Wiley Periodicals, Inc. Electr Eng Jpn, 173(4): 20–27, 2010; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/eej.21039     

Fatigue threshold and low-rate crack propagation properties for structural steels in 3 Pct sodium chloride aqueous solution

The fatigue threshold and low-rate crack propagation properties for a carbon steel, two high-strength steels, and two stainless steels were investigated in a 3 pct sodium chloride aqueous solution at frequencies between 0.03 and 30 Hz. Tests were conducted in a manner designed to avoid crack closure. Under freely corroding conditions, the effective values of the threshold stress intensity factor range, ΔK_th,eff, were lower than in air for all of the steels. In particular, the ΔK_th,eff values for the carbon and high-strength steels were almost equal to the theoretical ΔKth value of about 1 MPa m^1/2 calculated on the basis of the dislocation emission from the crack tip. At a given ΔK level higher than the threshold, the fatigue crack propagation rates accelerated with decreasing frequency for all of the steels. Under cathodic protection, the threshold and fatigue crack propagation properties were coincident with those in air regardless of material and frequency. The observed fatigue crack propagation behavior in a 3 pct NaCl solution was closely related to the corrosion reaction of the bare surface formed at the crack tip during each loading cycle.     

Nanoindentation as a strength probe—a study on the hardness dependence of indent size for fine-grained and coarse-grained ferritic steel

A nanoindentation hardness testing system, including an atomic-force microscope (AFM)-based nanoindentation tester and a calibration method using electrolytically polished single-crystal metals as references, was proposed. This was applied to a study of the mechanical properties of fine-grained ferritic steel (grain size of 1.2 μm) and coarse-grained ferritic steel (30 μm). An empirical function giving the macroscopic hardness for all four reference metals from the nanoindentation force curves was established. The converted Vickers hardness (HV*) of the coarse-grained steel is almost independent of the indent size. The fine-grained steel shows only HV* 130 with an indent of only 100 nm, compared with a macroscopic hardness of HV 210. The difference, HV 80, is considered to reflect the amount of grain-boundary strengthening. The critical indent size for the hardness transition seems to be around 1 μm, comparable to the grain size of the specimen. This result supports the explanation of grainboundary strengthening. It is also consistent with Pickering’s work on low-carbon steel, as the estimated locking parameter (k of 2.6×10⁵ N/m^3/2) in the Hall-Petch relationship is in good agreement with his value of 2.4×10⁵ N/m^3/2.     

Ion-implanted and permalloy hybrid magnetic bubble memory devices

Hybrid bubble memory devices have been proposed and operated with the memory density of 4 Mbit/cm². In the hybrid bubble memory devices, minor loops are composed of ion-implanted tracks with 4-µm period, and major lines and functional parts including block-replicate and swap gates are composed of Permalloy tracks with a longer period of 12 µm. Passive junctions between ion-implanted and Permalloy tracks have been developed, introducing the tapered ion-implantation technique. Improving the characteristics of the functional parts composed of Permalloy tracks, the hybrid bubble memory devices with block-replicate and swap gates have been operated, and the feasibility of the devices has been confirmed. In addition, the possibility of higher memory density has been shown.     

GaInAs-GaInNAs-GaInAs intermediate layer structure for longwavelength lasers

Proposes two new structures, the GaInAs-GaInNAs intermediate layer (IML) and the GaInN_xAs graded wells, which show better optical properties than the commonly used GaInNAs-GaAs rectangular quantum-wells. A 1240-nm emitting IML laser has been achieved with a low-threshold current density (200 A/cm²/well) and a relatively high characteristic temperature (T_o=100 K). The IML structure is very promising for long wavelength GaAs-based laser applications     

In vivo immunological toxicity in mice of carbon nanotubes with impurities

The longstanding question as to whether carbon nanotubes are intrinsically toxic hinders their widespread industrial application. Here, we clarify the effect of impurities within such tubes through systemic studies of immunological responses in mice by monitoring and examining changes in peripheral T-cell subset and peripheral cytokine levels and histology. Contaminated and clean tubes were subcutaneously implanted in mice. The implanted tubes with impurities clearly induced immunological toxicity and localized alopecia, whereas extremely pure implanted tubes showed good biocompatibility. Our studies suggest that such high-temperature thermal treatment is an effective way to improve the biocompatibility of carbon nanotube.