Hermite interpolation with simple planar PH curves by speed reparametrization

We introduce a new method of solving C¹ Hermite interpolation problems, which makes it possible to use a wider range of PH curves with potentially better shapes. By characterizing PH curves by roots of their hodographs in the complex representation, we introduce PH curves of type K(t−c)²ⁿ⁺¹+d. Next, we introduce a speed reparametrization. Finally, we show that, for C¹ Hermite data, we can use PH curves of type K(t−c)²ⁿ⁺¹+d or strongly regular PH quintics satisfying the G¹ reduction of C¹ data, and use these curves to solve the original C¹ Hermite interpolation problem.     

12.1‐in. WXGA AMOLED display driven by InGaZnO thin‐film transistors

Abstract— A full‐color 12.1‐in.WXGA active‐matrix organic‐light‐emitting‐diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix backplane. It was found that the fabricated AMOLED display did not suffer from the well‐known pixel non‐uniformity in luminance, even though the simple structure consisting of two transistors and one capacitor was adopted as the unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductors. The n‐channel a‐IGZO TFTs exhibited a field‐effect mobility of 17 cm²/V‐sec, threshold voltage of 1.1 V, on/off ratio >10⁹, and subthreshold gate swing of 0.28 V/dec. The AMOLED display with a‐IGZO TFT array is promising for large‐sized applications such as notebook PCs and HDTVs because the a‐IGZO semiconductor can be deposited on large glass substrates (larger than Gen 7) using the conventional sputtering system.     

Electron‐beam deposition of MgO on plastic substrate and manufacturing flexible flat fluorescent lamp

Abstract— A flexible fluorescent lamp that utilizes the same plasma discharge mode as in PDPs has been manufactured. The structure of the flexible lamp is simple and easy to manufacture. All‐plastic materials including plastic substrates, barrier ribs (spacers), and sealants for low‐temperature manufacturing processing have been adopted except for the phosphor and MgO thin film. The MgO thin films were coated on the plastic substrates as a protection layer against the plasma discharge. The adhesion and biaxial texture of MgO thin film deposited on the plastic substrates, poly‐ethyle‐nenaphthalate (PEN) and polycarbonate (PC), at low temperature (100–180°C) has been characterized. The MgO film on PEN shows good adhesion under a repeated bending test. The manufactured flexible lamp consists of two plastic substrates of about 3 in. on the diagonal, barrier rib (spacer), and external ITO electrodes. The Ne‐Xe (5%) gas mixture at 100–200 Torr was used for the discharge gas. A maximum surface luminance of about 100 cd/m² was achieved for a 1 ‐kHz AC pulse.     

User experimentation: an evaluation of velocity control techniques in immersive virtual environments

While many of the existing velocity control techniques are well designed, the techniques are often application-specific, making it difficult to compare their effectiveness. In this paper, we evaluate five known velocity control techniques using the same experimental settings. We compare the techniques based on the assumption that a good travel technique should be easy to learn and easy to use, should cause the user to have few collisions with the VE, should allow the user to complete tasks faster, and should promote better recollection of the environment afterwards. In our experiments, we ask twenty users to use each velocity control technique to navigate through virtual corridors while performing information-gathering tasks. In all cases, the users use pointing to indicate the direction of travel. We then measure the users’ ability to recollect the information they see in the VE, as well as how much time they spend in the VE and how often they collide with the virtual walls. After each test, we use questionnaires to evaluate the ease of learning and ease of use of the velocity control technique, and the users’ sense of presence in the environment. Each of the travel techniques is then evaluated based on the users’ performances in the VE and the results of their questionnaires.     

DEVS-Based modeling of VoIP spam callers’ behavior for SPIT level calculation

At the present time the VoIP (Voice over Internet Protocol) service is generally accepted as an alternative for people seeking cheaper means to make a phone call. Users of VoIP service may fall anywhere along a spectrum between types at two extremes: one of which is an ordinary caller who doesn’t use the telephone for commercial purposes, while the other is a person who generates spam calls for commercial purposes. The focus of this paper concerns modeling of spam callers’ behavior to calculate the SPIT (Spam over Internet Telephony) level for management of the quality of service. From the perspective of a VoIP service provider’s view, spam callers are also a type of customer and sometimes they are valuable for increasing revenue. However, if a service provider does not manage spam calls, it can harm their business, because ordinary users might not receive phone calls using the phone numbers of the VoIP service. Thus, there is a trade-off between revenues and usability in managing spam calls in the VoIP service. This work presents a model of spam caller’s behavior using the DEVS (Discrete Event System Specification) formalism. The DEVS formalism is applicable as a model of behavior, by defining the state and state transition of the target of the model. In our model, we use six main parameters to define the states and state transitions. Each state is represented by a number which indicates the SPIT level of a caller. If the value is 1.0 then the caller is more similar to a spam caller. Based on the model definition, we constructed a SPIT level Calculation UI (User Interface) that is used to manage spam calls to improve VoIP service quality.     

Robust background maintenance by estimating global intensity level changes for dynamic scenes

The maintenance of relevant backgrounds under various scene changes is very crucial to detect foregrounds robustly. We propose a background maintenance method for dynamic scenes including global intensity level changes caused by changes of illumination conditions and camera settings. If the global level of the intensity changes abruptly, the conventional background models cannot discriminate true foreground pixels from the background. The proposed method adaptively modifies the background model by estimating the level changes. Because there are changes caused by moving objects as well as global intensity level changes, we estimate the dominant level change over the whole image regions by mean shift. Then, the problem caused by saturated pixels are handled by an additional scheme. In the experiments for dynamic scenes, our proposed method outperforms previous methods by adaptive background maintenance and handling of saturated pixels.     

Photomultiplication-Type Organic Photodetectors with High EQE-Bandwidth Product by Introducing a Perovskite Quantum Dot Interlayer

A photomultiplication (PM)-type organic photodetector (OPD) that exploits the ionic motion in CsPbI₃ perovskite quantum dots (QDs) is demonstrated. The device uses a QD monolayer as a PM-inducing interlayer and a donor–acceptor bulk heterojunction (BHJ) layer as a photoactive layer. When the device is illuminated, negative ions in the CsPbI₃ QD migrate and accumulate near the interface between the QDs and the electrode; these processes induce hole injection from the electrode and yield the PM phenomenon with an external quantum efficiency (EQE) >2000% at a 3 V applied bias. It is confirmed that the ionic motion of the CsPbI₃ QDs can induce a shift in the work function of the QD/electrode interface and that the dynamics of ionic motion determines the response speed of the device. The PM OPD showed a large EQE-bandwidth product >10⁶ Hz with a −3 dB frequency of 125 kHz at 3 V, which is one of the highest response speeds reported for a PM OPD. The PM-inducing strategy that exploits ionic motion of the interlayer is a potential approach to achieving high-efficiency PM OPDs.     

Correlated Quantum Phenomena of Spin–Orbit Coupled Perovskite Oxide Heterostructures: Cases of SrRuO3 and SrIrO3 Based Artificial Superlattices

Unexpected, yet useful functionalities emerge when two or more materials merge coherently. Artificial oxide superlattices realize atomic and crystal structures that are not available in nature, thus providing controllable correlated quantum phenomena. This review focuses on 4d and 5d perovskite oxide superlattices, in which the spin–orbit coupling plays a significant role compared with conventional 3d oxide superlattices. Modulations in crystal structures with octahedral distortion, phonon engineering, electronic structures, spin orderings, and dimensionality control are discussed for 4d oxide superlattices. Atomic and magnetic structures, J_eff = 1/2 pseudospin and charge fluctuations, and the integration of topology and correlation are discussed for 5d oxide superlattices. This review provides insights into how correlated quantum phenomena arise from the deliberate design of superlattice structures that give birth to novel functionalities.     

Room-Temperature-Processable Highly Reliable Resistive Switching Memory with Reconfigurability for Neuromorphic Computing and Ultrasonic Tissue Classification

Reversible metal-filamentary mechanism has been widely investigated to design an analog resistive switching memory (RSM) for neuromorphic hardware-implementation. However, uncontrollable filament-formation, inducing its reliability issues, has been a fundamental challenge. Here, an analog RSM with 3D ion transport channels that can provide unprecedentedly high reliability and robustness is demonstrated. This architecture is realized by a laser-assisted photo-thermochemical process, compatible with the back-end-of-line process and even applicable to a flexible format. These superior characteristics also lead to the proposal of a practical adaptive learning rule for hardware neural networks that can significantly simplify the voltage pulse application methodology even with high computing accuracy. A neural network, which can perform the biological tissue classification task using the ultrasound signals, is designed, and the simulation results confirm that this practical adaptive learning rule is efficient enough to classify these weak and complicated signals with high accuracy (97%). Furthermore, the proposed RSM can work as a diffusive-memristor at the opposite voltage polarity, exhibiting extremely stable threshold switching characteristics. In this mode, several crucial operations in biological nervous systems, such as Ca²⁺ dynamics and nonlinear integrate-and-fire functions of neurons, are successfully emulated. This reconfigurability is also exceedingly beneficial for decreasing the complexity of systems—requiring both drift- and diffusive-memristors.     

A Novel and Facile Route to Synthesize Atomic‐Layered MoS2 Film for Large‐Area Electronics

High‐quality and large‐area molybdenum disulfide (MoS₂) thin film is highly desirable for applications in large‐area electronics. However, there remains a challenge in attaining MoS₂ film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few‐layered MoS₂ film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO)₆) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS₂ film is readily achievable in 20 min. Large‐area MoS₂ field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm² V^?1 s^?1, which is the highest reported for bottom‐gated MoS₂‐FETs fabricated via photolithography with an on/off ratio of ≈10⁵ at room temperature.