Low‐Power 512‐Bit EEPROM Designed for UHF RFID Tag Chip

In this paper, the design of a low‐power 512‐bit synchronous EEPROM for a passive UHF RFID tag chip is presented. We apply low‐power schemes, such as dual power supply voltage (VDD=1.5 V and VDDP=2.5 V), clocked inverter sensing, voltage‐up converter, I/O interface, and Dickson charge pump using Schottky diode. An EEPROM is fabricated with the 0.25 μm EEPROM process. Power dissipation is 32.78 μW in the read cycle and 78.05 μW in the write cycle. The layout size is 449.3 μm × 480.67 μm.     

A Fully Integrated Thin‐Film Inductor and Its Application to a DC‐DC Converter

This paper presents a simple process to integrate thin‐film inductors with a bottom NiFe magnetic core. NiFe thin films with a thickness of 2 to 3 μm were deposited by sputtering. A polyimide buffer layer and shadow mask were used to relax the stress of the NiFe films. The fabricated double spiral thin‐film inductor showed an inductance of 0.49 μH and a Q factor of 4.8 at 8 MHz. The DC‐DC converter with the monolithically integrated thin‐film inductor showed comparable performances to those with sandwiched magnetic layers. We simplified the integration process by eliminating the planarization process for the top magnetic core. The efficiency of the DC‐DC converter with the monolithic thin‐film inductor was 72% when the input voltage and output voltage were 3.5 V and 6 V, respectively, at an operating frequency of 8 MHz.     

Fabrication of a Superhydrophobic Surface from a Smectic Liquid‐Crystal Defect Array

A novel fabrication method is developed for the preparation of superhydrophobic surfaces. The procedure uses focal conic structures of semi‐fluorinated smectic liquid crystals (LCs) whose periodic toric focal conic domains (TFCDs) are prepared on a surface modified substrate. Reactive ion etching (RIE) on the periodic TFCD surface leads to a superhydrophobic surface with a water contact angle of ～160° and a sliding angle of ～2° for a 10 µL water droplet. The results show that this phenomenon is due to the development of a dual‐scale surface roughness arising from the nanoscale protuberance caused by applying the RIE process to the top of the microscale TFCD arrays. The unique surface behavior is further verified by demonstrating that RIE on a flat lamellar liquid crystal film, in which the director is aligned parallel with surface, results in a relatively low hydrophobicity as compared to when periodic TFCDs are subjected to REI. The observations made in this publication suggest that a new approach exists for selecting potential candidates of superhydrophic surface formation based on spontaneous self‐assembly in smectic liquid‐crystalline materials.     

High-speed driving method using bipolar scan waveform in AC plasma display panel

This paper proposes a new high-speed driving method using the bipolar scan waveform with a scan width of 1 /spl mu/s in an ac-plasma display panel. The bipolar scan waveform in an address period consists of a two-step pulse with two different polarities, i.e., a forward scan pulse with a negative polarity and reverse scan pulse with a positive polarity, which can produce two address discharges, including a primary address discharge for generating wall charges and secondary address discharge for accumulating wall charges. To produce the fast address discharge stably using the bipolar scan pulse during an address period, a new reset waveform is designed based on a V/sub t/ close curve analysis, and the address discharge characteristics examined under various reset and address waveforms. As a result of adopting the proposed driving method, a high-speed address with a scan width of 1 /spl mu/s is successfully obtained when using a checkered pattern on a 4-in test panel.     

Characteristics of P-channel SOI LDMOS Transistor with Tapered Field Oxides

A new tapered TEOS oxide technique has been developed to use field oxide of the power integrated circuits. It provides better uniformity of less than 3 % and reproducibility. On-resistance of P-channel RESURF (REduced SURface Field) LDMOS transistors has been optimized and improved by using a novel simulation and tapered TEOS field oxide on the drift region of the devices. With the similar breakdown voltage, at V_gs = ?5.0 V, the specific on-resistance of the LDMOS with the tapered field oxide is about 31.5 mΩ · cm², while that of the LDMOS with the conventional field oxide is about 57 mΩ · cm².     

Multiaxial and Transparent Strain Sensors Based on Synergetically Reinforced and Orthogonally Cracked Hetero‐Nanocrystal Solids

Wearable strain sensors are widely researched as core components in electronic skin. However, their limited capability of detecting only a single axial strain, and their low sensitivity, stability, opacity, and high production costs hinder their use in advanced applications. Herein, multiaxially highly sensitive, optically transparent, chemically stable, and solution‐processed strain sensors are demonstrated. Transparent indium tin oxide and zinc oxide nanocrystals serve as metallic and insulating components in a metal–insulator matrix and as active materials for strain gauges. Synergetic sensitivity‐ and stability‐reinforcing agents are developed using a transparent SU‐8 polymer to enhance the sensitivity and encapsulate the devices, elevating the gauge factor up to over 3000 by blocking the reconnection of cracks caused by the Poisson effect. Cross‐shaped patterns with an orthogonal crack strategy are developed to detect a complex multiaxial strain, efficiently distinguishing strains applied in various directions with high sensitivity and selectivity. Finally, all‐transparent wearable strain sensors with Ag nanowire electrodes are fabricated using an all‐solution process, which effectively measure not only the human motion or emotion, but also the multiaxial strains occurring during human motion in real time. The strategies can provide a pathway to realize cost‐effective and high‐performance wearable sensors for advanced applications such as bio‐integrated devices.     

Thermally controlled wavelength locker integrated in widely tunable SGDBR-LD module

A sampled-grating distributed Bragg reflector laser module having an integrated multiwavelength locker has been developed and evaluated. The uniquely designed wavelength locker made of thermally controlled etalon has provided uniform wavelength monitoring and very stable wavelength locking in the 188-ITU grid channels (37 nm) with 25-GHz spacing. Over the case temperature from -5/spl deg/C to 65/spl deg/C, the laser wavelength was locked within /spl plusmn/0.5 GHz, and the total power consumption of the module was less than 4 W.     

Measurement of nonlinear mechanical properties of PDMS elastomer

This paper presents the measurement of the nonlinear mechanical properties of polydimethylsiloxane (PDMS) elastomer based on the mixing ratio of base polymer to curing agent. Strip-type PDMS samples with different mixing ratios were prepared using a simple coating, curing, and cutting process. A cyclic uniaxial tension test with a fixed magnitude of applied strain and a single-pull-to-failure tension test were performed with a micro-tensile tester at room temperature.Our new finding is that when the PDMS is mixed with excessive curing agent, stress softening occurs and residual strain exists in cyclic tension tests when the magnitude of the applied strain increases. For the PDMS-05 samples, in which the mixing ratio of base polymer to curing agent was 5 to 1, there were large differences in the stresses for the same strain level under loading and unloading during the first cycle with a 100% fixed strain amplitude, but the softening effect of the stress in the PDMS dropped rapidly starting from the second cycle.Nonlinear mechanical Neo-Hookean, third-order Mooney, and second-order Ogden models of three different PDMS films were computed from the stress-strain data. The results showed that all models were preferable for the small strain region of PDMS compared with other models. In the nonlinear, large strain region, only the second-order Ogden model properly described the mechanical behavior of the PDMS, while the Neo-Hookean and third-order Mooney-Rivlin models were too stiff or flexible in the measurement range. The bulk modulus of PDMS increased with the amount of curing agent in it. Therefore, the second-order Ogden model is preferable for analyzing the PDMS structure over the entire measurement range. This could provide reasonable mechanical models of PDMS for rapid computational prototyping and for designing active and passive components from PDMS.     

Predictive model of a reduced surface field p-LDMOSFET using neural network

Due to complex dynamics, it has been extremely difficult to model high power devices. A predictive model is constructed by using a backpropagation neural network (BPNN). The BPNN was applied to predict electrical characteristics of a reduced surface field p-channel lateral double-diffused MOSFET. Drain–source currents for applied drain–source voltages were measured with a HP4156A. Prediction performance of BPNN model was optimized with variations in training factors. With respect to the reference models, the optimized models demonstrated considerably improved predictions. Model predictions were highly consistent with actual measurements. Further improvement was obtained by constructing a modular network comprising multiple BPNNs.     

Systematic Study of Widely Applicable N‐Doping Strategy for High‐Performance Solution‐Processed Field‐Effect Transistors

A specific design for solution‐processed doping of active semiconducting materials would be a powerful strategy in order to improve device performance in flexible and/or printed electronics. Tetrabutylammonium fluoride and tetrabutylammonium hydroxide contain Lewis base anions, F^? and OH^?, respectively, which are considered as organic dopants for efficient and cost‐effective n‐doping processes both in n‐type organic and nanocarbon‐based semiconductors, such as poly[[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)] (P(NDI2OD‐T2)) and selectively dispersed semiconducting single‐walled carbon nanotubes by π‐conjugated polymers. The dramatic enhancement of electron transport properties in field‐effect transistors is confirmed by the effective electron transfer from the dopants to the semiconductors as well as controllable onset and threshold voltages, convertible charge‐transport polarity, and simultaneously showing excellent device stabilities under ambient air and bias stress conditions. This simple solution‐processed chemical doping approach could facilitate the understanding of both intrinsic and extrinsic charge transport characteristics in organic semiconductors and nanocarbon‐based materials, and is thus widely applicable for developing high‐performance organic and printed electronics and optoelectronics devices.