Polarization-, Wavelength-, and Filter-Free All-Optical Clock Recovery in a Passively Mode-Locked Laser Diode With Orthogonally Pumped Polarization-Diversity Configuration

We proposed and demonstrated all-optical clock recovery system using a monolithic mode-locked laser diode (MLLD) that operated with less sensitivity to the polarization and the wavelength of the input data signals also with no bandpass filter to eliminate the input signal-components. The keys to this new technique are the MLLD integrated with a tensile-strained quantum-well saturable absorber and a new polarization-diversity setup by signal input orthogonally polarized to the lasing polarization of the MLLD. This approach was experimentally validated in the 40 Gbps clock recovery experiments. The results exhibited excellent performance of the clock recovery with low timing jitters (<0.3 ps) remaining small dependence on the wavelength and the polarization of the input data signals and input-signal suppression less than -30 dB with no use of the bandpass filter. We also succeeded in the stable clock recovery for the input of polarization-scrambled data signals.     

Light modulator using piezoelectric films with waveguides

A light modulator using piezoelectric films based on optical interference of the Mach-Zehnder type has been proposed and demonstrated. The modulator is constructed with two optical waveguides joined to each other at both ends to divide the incident light and to recombine them, and each waveguide is fabricated on a polyvinylidene fluoride (PVDF) film to serve as a voltage-driven phase-shifter.     

a-SiC:H/SiO2 Laminated Polarization Splitter for the Wavelength Region Longer Than 1.3 μm Prepared by Plasma-Enhanced Chemical Vapor Deposition

A laminated polarization splitter for the wavelength region longer than 1.3 μm is fabricated for the first time. It is composed of a-SiC:H/SiO₂ alternative multilayers prepared by plasma-enhanced chemical vapor deposition. Splitting behavior is also verified experimentally. It has low absorption loss even for the wavelength region around λ = 1.3 μm because the band-gap energy of a-Sic is larger than that of a-Si. The measured splitting angle is 13.8°, which is 2.4 times larger than the 5.7° splitting angle of rutile. The absorption loss of the multilayer is reduced to 1 × 10^-3 dB/μm at λ = 1.3 μm. The magnitude of the residual stress is 9.45 × 10⁸ dyn/cm², which is about one-third of that prepared by the rf bias sputtering equipment which is used for another project of our group. The deposition rate of SiO₂, is increased to 135 nm/min, which is 27 times larger than that prepared by the sputtering equipment.     

A 63-mW H.264/MPEG-4 audio/visual codec LSI with module-wise dynamic Voltage/frequency scaling

A single-chip H.264 and MPEG-4 audio-visual LSI for mobile applications including terrestrial digital broadcasting system (ISDB-T / DVB-H) with a module-wise, dynamic voltage/frequency scaling architecture is presented for the first time. This LSI can keep operating even during the voltage/frequency transition, so there is no performance overhead. It is realized through a dynamic deskewing system and an on-chip voltage regulator with slew rate control. By the combination with traditional low power techniques such as embedded DRAM and clock gating, it consumes only 63 mW in decoding QVGA H.264 video at 15 frames/sec and MPEG-4 AAC LC audio simultaneously.     

Stability of Skutterudite Thermoelectric Materials

By multifilling with La, Ba, Ga, Ti, Yb, Ca, Al, and In, the dimensionless figure of merit ZT of filled skutterudites has been improved in this work. ZT reached 0.75 for p-type (La,Ba,Ga,Ti) _x (Fe,Co)₄Sb₁₂ (x = 0.8 to 1.0) and 1.0 for n-type (Yb,Ca,Al,Ga,In) _y (Co,Fe)₄Sb₁₂ (y = 0.7 to 0.9). After annealing at 873 K for 180 h, 300 h, 710 h, 1000 h, and 5000 h in vacuum, the Seebeck coefficient S and the electrical resistivity ρ of the samples increased while the thermal conductivity λ decreased with increasing annealing time. As a result, the ZT values of both p- and n-type skutterudites remained unchanged or were slightly improved, demonstrating the excellent thermal stability of these skutterudites.     

Tunable Terahertz Device Using Refractive Index Control

We measured the thermal dependencies of the refractive index and the absorption coefficient of high-resistivity silicon. We found that the refractive index varied slightly with temperature, and the absorption coefficient was very low and remained approximately constant as the temperature was changed. As a result, the conditions for terahertz propagation in silicon could be controlled by changing the refractive index without any absorption loss. As one application of this effect, we developed a terahertz time delay generator that can generate a terahertz time delay by changing the temperature of the medium through which the terahertz beam passes, without the need for any mechanical delay. We demonstrated generation of a terahertz time delay of approximately 6.6 ps.     

Analysis of demand‐priority access using a priority queue with server vacations and message dependent switchover times

In this paper, we analyse the message waiting times in a local area network (LAN) that uses the demand‐priority access method. This is a priority‐based round‐robin arbitration method where the central controller (the repeater) polls its connected ports to determine which have transmission requests pending and the requests' priority classes. We model it as a 2‐priority M/G/1 queue with multiple server vacations and switchover time between service periods. The service discipline is nonpreemptive and the length of the switchover time is dependent upon the priority class of the preceding message served as well as that of the message to be served next. We provide an approximate analysis for the waiting times of both message classes and derive expressions for the Laplace–Stieltjes transforms (LST) of the stationary distributions and the mean waiting times. We conclude with numerical and simulation results to show the applicability and accuracy of the analytical model. This revised version was published online in June 2006 with corrections to the Cover Date.     

Nitric oxide decomposition in air by using nonthermal plasmaprocessing with additives and catalyst

Catalyst (copper-coated zeolite catalyst, i.e., Cu-ZSM-5) was used to enhance NO_x removal plasma chemical reactions. Two kinds of hydrocarbons (2-propane-1-ol, 2-propanol) were added to the synthesized flue gas before the nonthermal plasma process, and their effects on NO_x removal characteristics were investigated. Enhancement effects of NO_x removal by the nonthermal plasma process with hydrocarbons as the additives were confirmed. Usually, the catalyst's working temperature is much higher than the room temperature. A catalytic reactor was installed after the plasma reactor. Catalytic effects on NO_x removal characteristics disappeared when the synthesized flue gas temperature was increased (~250°C). When the synthesized flue gas temperature was at room temperature, about 90% NO _x removal efficiency was realized with a combination of hydrocarbons, the catalytic reactor, and the pulsed discharge plasma     

Electromagnetic wave absorber with wide-band frequencycharacteristics using exponentially tapered ferrite

As a countermeasure of EMI or EMC, various types of electromagnetic wave absorbers are used. A wide-band design method of an electromagnetic wave absorber with using exponentially tapered ferrite, which has very wide-band frequency characteristics, is proposed and discussed. The wide-band electromagnetic wave absorber can be designed under some approximations by the theoretical model using the equivalent material constants (equivalent complex permittivity and permeability) method for the regions varying spatially in the shape of ferrite. Based on the model, wide-band electromagnetic wave absorbers with taper, which have not only excellent reflectivity frequency characteristics but also a bandwidth of 30 MHz to 2150 MHz or 2430 MHz under the tolerance limits of -20 dB reflectivity, were designed     

A scheme of picosecond pulse shaping using gain saturationcharacteristics of semiconductor laser amplifiers

To obtain high power, well shaped picosecond pulses from gain-switched semiconductor lasers, the use of dynamic gain saturation characteristics of semiconductor laser amplifiers was investigated theoretically and experimentally. A configuration of a reflected-wave amplifier (RWA) with single-side external coupling is introduced for pulse shaping, which is found to be suitable for enhancing dynamic gain saturation. By a combination of a distributed feedback laser oscillator at 1.3 μm in wavelength and a reflected-wave amplifier of 400 μm cavity length with asymmetric facet reflectivities of 0.01% and 30%, single-mode optical pulses with almost no tailing, full width at half maximum of 15 ps, and peak power exceeding 50 mW were obtained without pulse broadening, despite the considerable tail structure of the incident pulse