An improved deep submicrometer MOSFET RF nonlinear model with newbreakdown current model and drain-to-substrate nonlinear coupling

An improved deep submicrometer (0.25 μm) MOSFET radio-frequency (RF) large signal model that incorporates a new breakdown current model and drain-to-substrate nonlinear coupling was developed and investigated using various experiments. An accurate breakdown model is required for deep submicrometer MOSFETs due to their relatively low breakdown voltage. For the first time, this RF nonlinear model incorporates the breakdown voltage turnover trend into a continuously differentiable channel current model and a new nonlinear coupling circuit between the drain and the lossy substrate. The robustness of the model is verified with measured pulsed I-V, S-parameters, power characteristics, harmonic distortion, and intermodulation distortion levels at different input and output termination conditions, operating biases, and frequencies     

Excellent Switching Uniformity of Cu-Doped $hbox{MoO}_{x}/hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

We have investigated a Cu-doped MoO_x/GdO_x bilayer film for nonvolatile memory applications. By adopting an ultrathin GdO_x layer, we obtained excellent device characteristics such as resistance ratio of three orders of magnitude, uniform distribution of set and reset voltages, switching endurance up to 10⁴ cycles, and ten years of data retention at 85degC. By adopting bilayer films of Cu-doped MoO_x/GdO_x, a local filament was formed by a two-step process. Improved memory characteristics can be explained by the formation of nanoscale local filament in the ultrathin GdO_x layer.     

On surface recombination velocity and output intensity limit of pulsed semiconductor lasers

Relationships obtained by F. Kappeler et al. (1982) are utilized to assess the effect of facet passivation on the output intensity limit in terms of surface recombination velocity. The results show a trend that the output intensity limit increases in an exponential manner with decreasing recombination velocity once the velocity is reduced by a factor of 2 from that for an unpassivated laser. They also indicate that the output intensity is not likely to be limited by nonradiative recombination at the facet when the recombination velocity is reduced by a factor of 4.<>     

Efficient dc-free RLL codes for optical recording

We report on new dc-free runlength-limited codes (DCRLL) intended for the next generation of DVD. The efficiency of the newly developed DCRLL schemes is extremely close to the theoretical maximum, and as a result, significant density gains can be obtained with respect to prior art coding schemes. With a newly developed DCRLL (d=2) code we can achieve a 9% higher overall rate than that of DVD's EFMPlus.     

A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor

To verify three important circuit schemes suitable for DRAMs in mobile applications, a 1.8-V 128-Mb SDRAM was implemented with a 0.15-/spl mu/m technology. To achieve an ideal 33% efficiency, the double boosting pump uses two capacitor's series connection at pumping phase, while they are precharged in parallel. The hybrid folded current sense amplifier together with a novel replica inverter connection improved power and speed performances. Also, a dual-referenced adjustment scheme for a temperature sensor was proposed to allow a very high accuracy in tuning. Without loss in productivity, the implemented dual-referenced searching technique achieved tuning error of less than /spl plusmn/2.5/spl deg/C.     

35 GHz integrated circuit rectifying antenna with 33% efficiency

A 35 GHz integrated circuit rectifying antenna (rectenna) has been developed using a microstrip dipole antenna and beam-lead mixer diode. Greater than 33% conversion efficiency has been achieved. The circuit should have applications in microwave/millimetre-wave power transmission and detection.<>     

Template‐Based Reconstruction of Surface Mesh Animation from Point Cloud Animation

In this paper, we present a method for reconstructing a surface mesh animation sequence from point cloud animation data. We mainly focus on the articulated body of a subject — the motion of which can be roughly described by its internal skeletal structure. The point cloud data is assumed to be captured independently without any inter‐frame correspondence information. Using a template model that resembles the given subject, our basic idea for reconstructing the mesh animation is to deform the template model to fit to the point cloud (on a frame‐by‐frame basis) while maintaining inter‐frame coherence. We first estimate the skeletal motion from the point cloud data. After applying the skeletal motion to the template surface, we refine it to fit to the point cloud data. We demonstrate the viability of the method by applying it to reconstruct a fast dancing motion     

Electrical and optical properties of deep-red top-surface-emittinglasers

By studying thermal behavior of all-MBE surface-emitting lasers, barrier heights and optimum cavity design parameters are obtained. The barrier heights for holes between hetero-interfaces of Al_0.3Ga_0.7As-Al_0.65Ga_0.35As and AlAs-Al_0.65Ga_0.35As (Δx=-0.35) are measured to be 77 meV at zero bias for the deep-red top-surface-emitting laser. The barrier height decreases linearly with forward bias voltage, explaining the nonlinearity in current-voltage characteristics of the top-surface-emitting laser. The contribution of electrons to electrical resistance is estimated to be negligibly small compared to that of holes for the structure consisting of Δ_x =0.35. Minimum threshold current and maximum differential quantum efficiency observed around 200 K indicate slight mismatch between gain maximum and Fabry-Perot resonance for the deep-red top-surface-emitting laser