Analysis of multiple indicator dilution curves for estimation of renal tubular transport parameters

A model is developed to estimate the renal tubular secretory parameters by the multiple indicator dilution (MID) technique. The model allows the calculation of influx (from plasma space to tubular cell), efflux (from tubular cell to plasma space) and sequestration (from tubular cell to luminal side) rate constants. A program using the MID-statistical analysis with least squares fitting (SALS) system for the estimation of these parameters is presented. A trapezoid rule and a non-linear least squares regression were used to carry out definite integrals of cubic spline function and least squares fitting, respectively. The system presented seems to be useful for the precise and rapid estimation of the tubular secretory rate constants.     

Experiments of device failures in a spatial power-combining array

The performance of a spatial power-combining array with device failure is investigated. Experimental results show that the array still combines the power in the broadside direction when the DC open-circuit failure occurs. Analysis of measured radiation patterns indicated that the power radiated from the patch antenna attached to the failed device is much smaller than the power radiated from other patch antennas. The effects of the chip resistor and the RF impedance of failed device are discussed     

Trapped image guide leaky-wave antennas for millimeter wave applications

A leaky-wave antenna is developed from a novel dielectric waveguide for millimeter wave applications. Design formulas and data are provided, and measured and computed results are presented for a prototype model.     

Catalytic oxidation of hydrogen chloride in a fluid bed reactor

The Deacon reaction (HCI + 1/4 O₂ ⇋ 1/2 Cl₂ + 1/2 H₂O) was studied in a catalytic fluid bed reactor. Reaction rates found from measurements in differential and integral reactors were represented by the Langmuir-Hinshelwood type rate equation. Considering the effect of catalysts in the dilute phase, it was found that conversions in a fluid bed reactor can be calculated without any modifying parameters. It is pointed out that the wake fraction, which has been necessary to consider for fast reactions in a fluid bed reactor, is attributed to the dilute phase effect.     

The protein encoded by cancer/testis gene D40/AF15q14 is localized in spermatocytes, acrosomes of spermatids and ejaculated spermatozoa

We have previously identified and cloned a human gene, D40, that is preferentially expressed in testis among normal organs, while it is widely expressed in various human tumor cell lines and primary tumors derived from different organs. In this report, we have examined the expression and localization of this protein in human testis with an antibody specific to D40 protein. In Western analyses, the anti-D40 antibody recognized a major band with a molecular mass of 300 kDa and a minor band of 250 kDa. These bands were not observed in the testis lysates from patients with Sertoli-cell-only syndrome and with Kleinfelter syndrome, who lack germ cells of the testis, indicating that D40 protein is expressed in the germ cells of normal testis. Immunohistochemical studies have revealed that D40 protein is highly expressed in spermatocytes and in the pre-acrosome of round spermatids. In the acrosome, D40 protein expression is observed not inside but outside the acrosome membrane. This is consistent with the finding that the amino-acid sequence at the amino terminal of the D40 protein lacks a hydrophobic signal peptide that is required for proteins to translocate to the membrane. Expression of D40 protein is observed in the acrosome of ejaculated spermatozoa as well, although the level is low compared with that in the pre-acrosome of spermatids. These results suggest that D40 protein plays important roles in spermatogenesis, especially in the formation and maintenance of the acrosome.     

Contact and interconnect formation on compound semiconductor devices by ionized-cluster beam deposition

A new deposition technology, namely the ionized-cluster beam deposition method, was applied to form contacts and interconnects on III–V compound semiconductor devices. Au alloy films deposited by this technology had strong enough adhesion to an insulator layer to be a satisfactory interconnection. A step approximately 8 μm high at an angle of 90° to the semiconductor was covered fully with an Au alloy film obtained by this method. Electrical ohmic contacts for p-type GaP and GaAs were successfully obtained at substrate temperatures of 400 °C and 300 °C respectively without any further annealing process; this resulted in better device characteristics because of the lower process temperatures and also made the device less expensive because of a reduction in fabrication time.