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41.
Min-Seok Park Vladislav P. Vislovskiy Jong-San Chang Yong-Gun Shul Jin S. Yoo Sang-Eon Park 《Catalysis Today》2003,87(1-4):205-212
Alumina-supported vanadium oxide, VOx/Al2O3, and binary vanadium–antimony oxides, VSbOx/Al2O3, have been tested in the ethylbenzene dehydrogenation with carbon dioxide and characterized by SBET, X-ray diffraction, X-ray photoelectron spectroscopy, hydrogen temperature-programmed reduction and CO2 pulse methods. VSbOx/Al2O3 exhibited enhanced catalytic activity and especially on-stream stability compared to VOx/Al2O3 catalyst. Incorporation of antimony into VOx/Al2O3 increased dispersion of active VOx species, enhanced redox properties of the systems and formed a new mixed vanadium–antimony oxide phase in the most catalytically efficient V0.43Sb0.57Ox/Al2O3 system. 相似文献
42.
A new discontinuous modulation method based on space-vector control is proposed and analyzed. The proposed technique employs a pulse-dropping method and is designed in the time domain. It features a very wide modulation range while maintaining the required waveform qualities and switching numbers in the overmodulation region. Since the modulation method and modulation index equation are simple, the proposed technique can be easily implemented by software and is applicable to the overmodulation region in ac motor drives. The performance indexes are discussed and experiments have been performed. 相似文献
43.
Yan R.-H. Lee K.F. Jeon D.Y. Kim Y.O. Park B.G. Pinto M.R. Rafferty C.S. Tennant D.M. Westerwick E.H. Chin G.M. Morris M.D. Early K. Mulgrew P. Mansfield W.M. Watts R.K. Voshchenkov A.M. Bokor J. Swartz R.G. Ourmazd A. 《Electron Device Letters, IEEE》1992,13(5):256-258
The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region 相似文献
44.
Sang-Hoon Lee Dae Hwan Kim Kyung Rok Kim Jong Duk Lee Byung-Gook Park Young-Jin Gu Gi-Young Yang Jeong-Taek Kong 《Nanotechnology, IEEE Transactions on》2002,1(4):226-232
A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures. 相似文献
45.
46.
A two-dimensional finite element model was constructed to analyze the simulated mechanical behavior of a cantilevered fixed partial denture. The variations of the models were made by altering the degree of bone support, the number of splinted abutments, and the length of the pontics. High stress concentrations were observed around the connectors of the fixed prosthesis and the tooth closest to the cantilever. Reduced bone support increased the deflection and stress concentrations. There was reduction in displacement and stress concentration when the teeth were splinted together. To improve the prognosis of the fixed partial denture cantilever, the number of abutments should be increased and the number of pontics decreased. 相似文献
47.
48.
Calculation of Mass Attenuation Coefficients of Beta Particles 总被引:1,自引:0,他引:1
Yi C.Y.; Han H.S.; Cho W.K.; Park U.J.; Jun J.S.; Chai H.S. 《Radiation protection dosimetry》1998,78(3):221-229
49.
We address the problem of determining the topology and bridge-capacity assignments for a network connecting a number of token rings via source-routing bridges. The objective is to minimize the cost of bridge installations while meeting the network users' performance requirements. The problem is modeled as a mixed 0–1 integer program. A comparison is given between two solution algorithms: a simulated annealing algorithm using the flow-deviation algorithm for each routing subproblem, and a drop algorithm using the simplex method for the same subproblems to provide benchmark solutions. In the former algorithm, the routing subproblem is formulated as a nonlinear program with penalty functions to model node and link capacity constraints, and in the latter as a multicommodity flow model with the same capacity constraints. Computational results show that the simulated-annealing/flow-deviation algorithm produced substantially better solutions than the LP-based drop algorithm. 相似文献
50.
Ha J.H. Kim S.W. Seol Y.S. Park H.K. Choi S.H. 《Semiconductor Manufacturing, IEEE Transactions on》1996,9(2):289-291
The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF 6/Ar mixtures. It was found that while the plug loading effect is independent of varying SF6/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology 相似文献