Application of laser-induced breakdown spectroscopy for detecting leakage of boric acid

Recently, many studies have been conducted on developing on-line leak detection techniques in the reactor vessel head of nuclear power plants. One of them, laser-induced breakdown spectroscopy (LIBS), an effective technique of leak detection, which is a kind of atomic emission spectroscopy that uses a highly energetic laser pulse as the excitation source, has been of interest due to the fast and reliable identification of chemical elements for the precipitates formed by the leakage of cooling water containing boric acid. Experimental setup and tests were performed for the boric acid precipitates formed on the steel for various conditions with a Q-switched 532 nm Nd:YAG laser, optical lenses, an Echelle spectrograph and an intensified charge-coupled device detector. The LIBS system could be applied to obtain a spectral line (～249. 2 nm) corresponding to the atomic boron emission line for the precipitates of boric acid formed on low alloy steels, SA508 and SA533, as a substrate. The LIBS technique based on characterizing boric acid deposits might be used for detecting the leakage of cooling water in reactor vessel head of nuclear power plants.     

Efficiency improvement of polymer light-emitting diodes using a quantum dot interlayer between a hole transport layer and an emitting layer

The current efficiency of polymer light-emitting diodes (PLEDs) were improved using a quantum dot interlayer between a hole transport layer and an emitting layer. The quantum dot interlayer played a role of controlling the hole transport in the PLEDs and enhanced the charge balance in the emitting layer. The current efficiency of the PLEDs was increased by more than 20% by the quantum dot interlayer. In particular, the efficiency improvement was significant at high luminance due to reduced efficiency roll-off in the quantum dot-embedded PLEDs.     

Fabrication of Al matrix composite reinforced with submicrometer-sized Al<Subscript>2</Subscript>O<Subscript>3</Subscript> particles formed by combustion reaction between HEMM Al and V<Subscript>2</Subscript>O<Subscript>5</Subscript> composite particles during sintering

To fabricate an Al-V matrix composite reinforced with submicron-sized Al₂O₃ and Al_xV_y (Al₃V, Al₁₀V) phases, high energy mechanical milling (HEMM) and sintering were employed. By increasing the milling time, the size of mechanically milled powder was significantly reduced. In this study, the average powder size of 59 μm for Al, and 178 μm for V₂O₅ decreased with the formation of a new product, Al-Al₂O₃-Al_xV_y, with a size range from 1.3 μm to 2.6 μm formed by the in-situ combustion reaction during sintering of HEM milled Al and V₂O₅ composite powders. The in-situ reaction between Al and V₂O₅ during the HEMM and sintering transformed the Al₂O₃ and Al_xV_y (Al₃V, Al₁₀V) phases. Most of the reduced V reacted with excess the Al to form Al_xV_y (Al₃V, Al₁₀V) with very little V dissolved into Al matrix. By increasing the milling time and weight percentage of V₂O₅, the hardness of the Al-Al₂O₃-Al_xV_y composite sintered at 1173 K increased. The composite fabricated with the HEMM Al-20wt.%V₂O₅ composite powder and sintering at 1173 K for 2 h had the highest hardness.     

The pH effect for rare earth metals Nd, Pr and Y in aqueous solution dissolved Mg, Zn and Al

The pH variations of Mg, Zn and Al solutions to which had been added the rare earth metals Nd, Pr and Y were observed in 3.5 wt.% NaCl with respect to high energy mechanical ball milling effects. Mg was directly dissolved and exhibited a pH value of 10.5. On the other hand, Zn and Al needed to be saturated for a certain amount of time. The addition of rare earth metals played a role in increasing the pH with low reduction potentials. Additionally, mechanical ball milling provided high energy to Mg + x wt.% Zn + 0.5 wt.% Nd mixture by fracturing fragmentation of metals, which led to an increase in the pH when the mixture was immersed in 3.5 wt.% NaCl. The addition of Zn to Mg + 0.5 wt.% Nd caused a higher pH than when Mg + 0.5 wt.% Nd alone was added.     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

Over GHz electrical circuit model of a high-density multiple line grid array (MLGA) interposer

The multiple line grid array (MLGA) interposer was recently introduced as a future high-density high-speed bonding method. In this paper, we introduce an electrical model and high-frequency characteristics of the MLGA interposer. The high-frequency electrical model was extracted from microwave S-parameter measurements up to 20 GHz as well as from fundamental microwave network analysis. For the parameter fitting process during model extraction, an optimization method was used. Several different types of MLGA interposers were designed, assembled and tested. The test vehicles contained coplanar waveguides, probing pads and an MLGA interposer structure. The height of the MLGA, the conductor shape inside the MLGA, and the dielectric insulator of the MLGA were varied. From the model, an MLGA with a height of 0.4 mm and a polymer dielectric insulator was found to have 203 pH of self inductance, 49 pH of mutual inductance with the nearest ground conductor line, and 186 fF of mutual capacitance. By reducing the height of the MLGA and by using an insulator with a lower dielectric constant, parasitic inductance and capacitance is further reduced. TDR/TDT simulation and measurement showed the validity of the extracted model parameters of the MLGA interposer. Circuit simulation based on the extracted model revealed that the MLGA interposer could be successfully used for microwave device packages up to 20 GHz and for high-speed digital device packages with a clock cycle up to 5 GHz.     

An InGaP-GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets

We demonstrate a new linearized monolithic microwave integrated circuit smart power amplifier of extraordinary high power-added efficiency (PAE), especially at the most probable transmission power of wide-band code-division multiple-access handsets. A PAE of 21% at 16 dBm of output power, which is the maximum bound of the most probable transmission power in IS-95 systems, was obtained, as well as 40% at 28 dBm, the required maximum output power, with a single-chip MMIC power amplifier. The power amplifier has been devised with two InGaP-GaAs heterojunction bipolar transistor amplifying chains parallel connected, each chain being optimized for a different P/sub 1dB/ (1-dB compression point) value: one for 16 dBm for the low-power mode, targeting the most probable transmission power, and the other for 28 dBm for the high-power mode. The high-power mode operation shows 40% of PAE and -30 dBc of adjacent channel leakage power ratio (ACLR) at the maximum output power of 28 dBm. The low-power mode operation exhibits -34 dBc of ACLR at 16 dBm with 14 mA of a quiescent current. This amplifier improves power usage efficiency and, consequently, the battery lifetime of the handset by a factor of three.     

Reconstruction of conductivity and current density images using only one component of magnetic field measurements

Magnetic resonance current density imaging (MRCDI) is to provide current density images of a subject using a magnetic resonance imaging (MRI) scanner with a current injection apparatus. The injection current generates a magnetic field that we can measure from MR phase images. We obtain internal current density images from the measured magnetic flux densities via Ampere's law. However, we must rotate the subject to acquire all of the three components of the induced magnetic flux density. This subject rotation is impractical in clinical MRI scanners when the subject is a human body. In this paper, we propose a way to eliminate the requirement of subject rotation by careful mathematical analysis of the MRCDI problem. In our new MRCDI technique, we need to measure only one component of the induced magnetic flux density and reconstruct both cross-sectional conductivity and current density images without any subject rotation.