Suppressive effect of corticosteroids on the gene expression of interleukin-5 and eosinophil activation in asthmatics

Although cortico steroids are effective anti-inflammatory agents in ameliorating asthma symptoms and bronchial hperreactivity, their mechanism of action is unknown. Interleukin (IL)-5 is known to play a key role in regulating eosinophil proliferation and activation. Therefore, we examined the changes of IL-5 mRNA expressions in PBMC semi-quantitatively with RT-PCR as well as serum ECP levels and MCH-PC20 values in asthmatics before and after being treated with corticosteroids. The results revealed that there were significant decrease in the level of IL-5 mRNA and serum ECP concentration after therapy (P < 0.05) and there was remarkable improvement in the values of MCH-PC20 and FEV1% (P < 0.05). It was also found that the changes of serum ECP levels or MCH-PC20 values were accompanied by a reduction in IL-5 mRNA expression (r = 0.5426 or 0.4857, P < 0.05). These results suggested that the therapeutic effects of corticosteroids in asthma may result from modulation of IL-5 gene expression with consequent inhibition of eosinophil activation.     

铁路冷藏运输运价分析

本文对各种运输方式易腐货物的运价进行了比较分析,对铁路冷藏运输的现行运价和保本运价进行了讨论,提出了铁路冷藏运输运价改革的若干建议,可供铁路进行冷藏运输改革参考。     

Theory and design of a tapered line distributed photodetector

We present the theory and design of a tapered line distributed photodetector (TLDP). In the previously demonstrated velocity-matched distributed photodetector (VMDP), high electrical bandwidth is achieved by proper termination in the input end to absorb reverse traveling waves, sacrificing one-half of the quantum efficiency. By utilizing the tapered line structure and phase matching between optical waves and microwaves in our analyzed structure, a traveling-wave photodetector is more realizable and ultrahigh bandwidth can be attained due to removal of the extra input dummy load that sacrifices one-half of the total quantum efficiency. To investigate the advantages of TLDP over VMDP, we calculate their electrical bandwidth performances by using an analytic photodistributed current model. We adopted low-temperature-grown (LTG) GaAs-based metal-semiconductor-metal (MSM) traveling-wave photodetectors as example unit active devices in the analytic bandwidth calculation for their high-speed and high-power performances. Both VMDP and TLDP in our simulation are assumed to be transferred onto glass substrates, which would achieve high microwave velocity/impedance and make radiation loss negligible. The simulated bandwidth of a properly designed LTG GaAs MSM TLDP is /spl sim/325 GHz, which is higher than the simulated bandwidth of the LTG GaAs MSM VMDP with an open-circuit input end (/spl sim/240 GHz) and is almost comparable to the simulated bandwidth of an input-terminated LTG GaAs MSM VMDP (/spl sim/330 GHz). This proposed method can be applied to the design of high-bandwidth distributed photodetectors for radio-frequency photonic systems and optoelectronic generation of high-power microwaves and millimeter waves.     

宽带无源光网络(BPON)关键技术的发展与研究

宽带无源光网络（BPON）是实现宽带、多业务接入的理想物理平台，本文介绍了BPON网络的发展，重点讨论了将ATM技术和PON技术相结合的APON系统及其升级系统SuperPON的基本结构和关键技术，对最近兴起的将以太技术和PON技术相结合的EPON系统的基本概念和工作原理也进行了阐述，并对未来BPON技术的发展进行了展望。     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

结合试飞特点,开展专用测试设备计量确认

根据我院专用测试设备计量确认现状及需求，对开展试飞专用测试设备计量确认工作的要求，步骤、确认原则，以及编定计量确认方法进行了必要的讨论分析。     

Development of the Chinese Scientometric Indicators (CSI)

We describe the Chinese Scientometric Indicators (CSI), an indicator database derived from the Chinese Science Citation Database (CSCD). Its design is supported by the Natural Sciences Foundation of China (NSFC). In this indicator database data of a statistical nature are organized and categorized leading to ranked lists and providing bases for comparisons among Chinese institutions and regions.     

吐丝圈径对大规格高碳盘条组织性能的影响

计算与分析了斯太尔摩冷线上盘条的吐丝圈径、搭接密度及"佳灵"装置横向布风曲线之间的关系,研究了吐丝圈径的大小对大规格82B盘条组织和性能的影响,确定了大规格82B盘条最小吐丝圈径应为980mm.     

8096/8098单片机集成开发系统

本集成开发环境集编辑、编译、调试和运行于一体,模拟了MCS-96系列单片机的指令系统,并给教学、实验、应用、科研和单片机的开发提供了强有力的手段。