A Colorimetric Hydrocarbon Sensor Employing a Swelling‐Induced Mechanochromic Polydiacetylene

Exceptional challenges have confronted the rational design of colorimetric sensors for saturated aliphatic hydrocarbons (SAHCs). The main reasons for this difficulty are the extremely nonpolar nature of these targets and their lack of functional groups that can interact with probes. By taking advantage of a mechanochromic conjugated polydiacetylene (PDA) and the hydrocarbon‐induced swelling properties of polydimethylsiloxane (PDMS), a sensor film that enables simple, colorimetric differentiation between a variety of C5 to C14 aliphatic hydrocarbons is fabricated. The unprecedented PDA–PDMS composite sensor undergoes a blue‐to‐red colorimetric transition on a timescale that is dependent on the chain length of the hydrocarbon target. In addition, the development of the red color is directly proportional to the swelling ratio of the film. This straightforward approach enables naked‐eye differentiation between n‐pentane and n‐heptane. The versatility of the sensor system is demonstrated by using it for the colorimetric determination of kerosene in adulterated diesel oil. Finally, the observation that a PDA microcrystal in the film undergoes significant expansion and tearing in concert with a blue‐to‐red colorimetric transition during the swelling process provides direct evidence for the mechanism for the mechanochromic behavior of the PDA.     

Scalability study of the ad hoc on‐demand distance vector routing protocol

As mobile networking continues to experience increasing popularity, the need to connect large numbers of wireless devices will become more prevalent. Many recent proposals for ad hoc routing have certain characteristics that may limit their scalability to large networks. This paper examines five different combinations of modifications that may be incorporated into virtually any on‐demand protocol in order to improve its scalability. The scalability of current on‐demand routing protocols is evaluated through the selection of a representative from this class of protocols. The performance of the un‐modified on‐demand protocol is compared against that of it combined with each of the scalability modifications. Each scheme's behavior is analyzed in networks as large as 10,000 nodes through detailed simulation. Based on the observations, conclusions are drawn as to the expected scalability improvement that can be achieved by each modification. Copyright © 2003 John Wiley & Sons, Ltd.     

A Rigorous 2D Approximation Technique for 3D Waveguide Structures for BPM Calculations

We propose a rigorous 2D approximation technique for the 3D waveguide structures; it can minimize the well‐known approximation errors of the commonly used effective index method. The main concept of the proposed technique is to compensate for the effective cladding index in the equivalent slab model of the original channel waveguide from the modal effective index calculated by the nonuniform 2D finite difference method. With simulations, we used the proposed technique to calculate the coupling characteristics of a directional coupler by the 2D beam propagation method, and the results were almost exactly the same as the results calculated by the 3D beam propagation method.     

Photomultiplication-Type Organic Photodetectors with High EQE-Bandwidth Product by Introducing a Perovskite Quantum Dot Interlayer

A photomultiplication (PM)-type organic photodetector (OPD) that exploits the ionic motion in CsPbI₃ perovskite quantum dots (QDs) is demonstrated. The device uses a QD monolayer as a PM-inducing interlayer and a donor–acceptor bulk heterojunction (BHJ) layer as a photoactive layer. When the device is illuminated, negative ions in the CsPbI₃ QD migrate and accumulate near the interface between the QDs and the electrode; these processes induce hole injection from the electrode and yield the PM phenomenon with an external quantum efficiency (EQE) >2000% at a 3 V applied bias. It is confirmed that the ionic motion of the CsPbI₃ QDs can induce a shift in the work function of the QD/electrode interface and that the dynamics of ionic motion determines the response speed of the device. The PM OPD showed a large EQE-bandwidth product >10⁶ Hz with a −3 dB frequency of 125 kHz at 3 V, which is one of the highest response speeds reported for a PM OPD. The PM-inducing strategy that exploits ionic motion of the interlayer is a potential approach to achieving high-efficiency PM OPDs.     

Virus‐Templated Self‐Mineralization of Ligand‐Free Colloidal Palladium Nanostructures for High Surface Activity and Stability

In solution‐based synthesis of colloidal nanostructures, additions of ligands, stabilizers, and redox reagents are generally required to obtain desirable structures, though ligands and stabilizers on the surface of nanostructures can substantially affect the surface‐related activity. Accordingly, an extensive rinsing process is usually required to remove residual reagents and stabilizers. This study reports a spontaneous self‐biomineralization of palladium (Pd) ions on a filamentous virus to form ligand‐free Pd nanowires under ambient conditions. No reducing reagents or additional surface stabilizers are used; the genetically modified virus alone supports the polycrystalline Pd nanowires within the nanostructure, maintaining the clean surface even without a rinsing process. The advantage of the ligand‐free Pd nanowires is found in the Suzuki‐coupling reaction, in which the nanowire catalytic activity is maintained after repeated reactions, while conventional Pd colloids undergo surface contamination by the stabilizer and lose their catalytic activity during repeated uses. The ligand‐free surface, high electronic connectivity, and structural stability of the Pd nanowires also allow high sensitivity and selectivity in hydrogen gas sensing analysis. This work emphasizes the importance of the ligand‐free surface of biotemplated nanostructures in maintaining functionalities without surface contamination.     

Effects of Interfacial Dielectric Layers on the Electrical Performance of Top‐Gate In‐Ga‐Zn‐Oxide Thin‐Film Transistors

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top‐gate In‐Ga‐Zn‐oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below 200°C, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as Si₃N₄ and Al₂O₃, the electrical properties are analyzed. After post‐annealing at 200°C for 1 hour in an O₂ ambient, the sub‐threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative‐bias stress tests on TFTs with a Si3N4 IDL, the degradation sources are closely related to unstable bond states, such as Si‐based broken bonds and hydrogen‐based bonds. From constant‐current stress tests of Id = 3 µA, an IGZO‐TFT with heat‐treated Si₃N₄ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge‐injection and electron‐trapping behavior.     

Soluble pentacene thin-film transistor using a high solvent and heat resistive polymeric dielectric with low-temperature processability and its long-term stability

Solution processable organic thin-film transistors (OTFTs) were fabricated using 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) and low-temperature processable polyimide gate dielectric. The TIPS-pentacene OTFT with the dielectric was found to have a field-effect mobility of 0.15 cm²/Vs, which is comparable to that of OTFT with an inorganic dielectric. The OTFTs with the polyimide dielectric did not show any significant performance degradation as time passed. A field-effect mobility of the OTFTs in 60 days was found to be almost identical to that of pristine OTFT. The combination of TIPS-pentacene and our polyimide gate dielectric can be one of the potential candidates for the fabrication of stable OTFTs for large-area flexible electronics.     

Phase-separated polydimethylsiloxane as a dielectric surface treatment layer for organic field effect transistors

We suggest a novel method for treating the surfaces of dielectric layers in organic field effect transistors (OFETs). In this method, a blend of poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and dimethylsiloxane (DMS) with a curing agent is spin coated onto the surface of a dielectric substrate, silicon oxide (SiO₂), and then thermally cured. X-ray photoelectron spectroscopy, contact angle measurements, and morphology analysis were used to show that the hydrophilic DMS layer is preferentially adsorbed on the SiO₂ substrate during the spin coating process. After thermal curing, the bottom DMS layer becomes a hydrophobic PDMS layer. This bottom PDMS layer becomes thinner during curing due to the upward motion of the hydrophobic PDMS molecules. The FET mobility of the cured system was 10^?2 cm²/Vs, which is similar to that of polymeric semiconductors on octadecyltrichlorosilane treated SiO₂ dielectric layers. We also discuss the possibility of using this blend method to increase the air-stability of polymeric semiconductors.     

Energy-Efficient Double-Edge Triggered Flip-Flop

This paper presents a novel design for a double-edge triggered flip-flop (DETFF). A detailed analysis of the transistors used in the DETFF is carried out to determine the critical path. Therefore, the proposed DETFF employs low-V _th transistors at critical paths such that the power-delay product as well as the large area consumption caused by the low-V _th transistors can be resolved simultaneously. Therefore, the proposed DETFF fully utilizes the multi-V _th scheme provided by advanced CMOS processes without suffering from a large area penalty, slow clock frequency, and poor noise immunity. The proposed design is implemented using a typical 0.18-μm 1P6M CMOS process. The measurement results reveal that the proposed DETFF reduce the power-delay product by at lease 25% (i.e., dissipated energy).     

Pixel‐Structured Scintillator with Polymeric Microstructures for X‐Ray Image Sensors

We introduce a pixel‐structured scintillator realized on a flexible polymeric substrate and demonstrate its feasibility as an X‐ray converter when it is coupled to photosensitive elements. The sample was prepared by filling Gd₂O₂S:Tb scintillation material into a square‐pore‐shape cavity array fabricated with polyethylene. For comparison, a sample with the conventional continuous geometry was also prepared. Although the pixelated geometry showed X‐ray sensitivity of about 58% compared with the conventional geometry, the resolving power was improved by about 70% above a spatial frequency of 3 mm^?1. The spatial frequency at 10% of the modulation‐transfer function was about 6 mm^?1.