Traveling-wave amplifiers with prescribed frequency response

Microwave transistor amplifier combinations that have controlled frequency response over a specified bandwidth were designed. Theoretical analysis of such an amplifier with an arbitrary number of sections is presented. The response of the amplifier is controlled by tapering the frequency selectivity or Q of each section of the amplifier. To verify the theory, a three-section amplifier with maximally flat time delay response was designed, constructed, and evaluated. Existing traveling-wave amplifiers were modeled as lossy transmission lines. Although the amplifiers were relatively broadband, a prescribed frequency response was not achieved, and each transistor did not receive an equal portion of the signal power. Resistive elements were required for impedance matching at the input and output. The design seeks to improve on previous techniques by trading bandwidth for controlled gain. By making the transmission line that connects the amplifier sections nonuniform, the frequency response was controlled over the design bandwidth. The designs can easily be implemented using familiar components     

Grain size effects on the mechanical properties of some squeeze cast light alloys

Mechanical property-grain size relationships have been examined for squeeze cast Al-4.5% Cu alloy, for an aluminium alloy with a composition corresponding to wrought 7010, and for a magnesium alloy AZ91. The general trend of the results obtained showed that the tensile properties and the fatigue strength improved as grain size decreased and the reverse was found to be the case for the fatigue crack propagation resistance and fracture energy of these castings. However, the results also showed that no simple common relationship existed between grain size and the tensile properties of the different alloys. The results are discussed in respect of their microstructures.     

Quantitative Analysis of Structural Changes in Steel Caused by High-Temperature Holding in Hydrogen

We give a quantitative estimate of changes in the structure of 15Kh2MFA steel after its long-term exposure to the combined action of high temperature, tensile stresses, and hydrogen as the factors of degradation of this steel under conditions of oil hydrocracking. Under laboratory conditions, we study the effect of high-temperature hydrogen degradation of 15Kh2MFA heat-resistant steel on changes in the quantitative characteristics of its structural elements, in particular, in the dimension and average distance between carbides as well as in their orientation from one grain to another. Algorithms for the solution of the formulated problems are described, and the possibilities of proposed approaches for the quantitative automatic processing of metallographic images are shown.     

Optical properties of metallic quantum wells

The authors model the optical properties of metallic quantum wells with thicknesses in the range of a few nanometers. A simple picture that includes only single electron transitions predicts strong absorption lines at frequencies associated with allowed interband transitions. This strong absorption feature can be in the near infrared for metal films several monolayers thick. The model is extended to include collective electron interactions by solving simultaneously Schroedinger's and Poisson's equations. It is found that the single electron picture does not change appreciably for frequencies above the bulk plasma frequency of the metal. For frequencies at or below the plasma frequency, however, the absorption is reduced in strength and becomes nearly featureless     

A 6-ns ECL 100 K I/O and 8-ns 3.3-V TTL I/O 4-Mb BiCMOS SRAM

The authors report a 4 M word×1 b/1 M word×4 b BiCMOS SRAM that can be metal mask programmed as either a 6-ns access time for an ECL 100 K I/O interface to an 8-ns access time for a 3.3-V TTL I/O interface. Die size is 18.87 mm×8.77 mm. Memory cell size is 5.8 μm×3.2 μm. In order to achieve such high-speed address access times the following technologies were developed: (1) a BiCMOS level converter that directly connects the ECL signal level to the CMOS level; (2) a high-speed BiCMOS circuit with low threshold voltage nMOSFETs; (3) a design method for determining the optimum number of decoder gate stages and the optimum size of gate transistors; (4) high-speed bipolar sensing circuits used at 3.3-V supply voltage; and (5) 0.55-μm BiCMOS process technology with a triple-well structure