Displacement control crack-growth instability in an elastic-softening material

The criterion for crack growth instability in an elastic-softening material that is subjected to displacement control loading conditions is examined. A theoretical analysis of the model of a solid containing two symmetrically situated deep cracks and with tensile loading of the remaining ligament, defines the criterion for crack growth instability. The criterion is expressed in terms of the material's softening characteristics and the solid's geometrical parameters. The analysis covers the complete spectrum of material behaviour from the case where the softening zone is very small to the case where instability does not occur until the softening zone traverses the ligament between the crack tips.     

Use of166mHo for calibration of gamma-ray spectrometers with semiconductor detectors

Translated from Atomnaya Énergiya, Vol. 67, No. 3, pp. 215–216, September, 1989.     

Interdisciplinary research: roles for self-organization

No generally accepted principles and guidelines currently exist to help engineers design local interaction mechanisms that result in a desired global behavior. However, several communities have developed ways of approaching this problem in the context of niched application areas. Because the ideas underlying these approaches are often obscured or underemphasized in technical papers, the authors review the role of self-organization in their work. They provide a better picture of the status of the emerging field of self-organizing systems or autonomic computing.     

OTDM transmitter using WDM-TDM conversion with an electroabsorptionwavelength converter

An all-optical multiplexing technique using wavelength division multiplexing (WDM)-time division multiplexing (TDM) conversion with an electroabsorption wavelength converter has been proposed and demonstrated. The effectiveness of this WDM-TDM conversion technique for various pulsewidth settings was experimentally investigated. The fluctuation of the signal performance, which was inevitably caused by the coherent crosstalk between adjacent pulses in the conventional optical time division multiplexing (OTDM) technique, were successfully suppressed, even in the case of wide pulse duration. High Q-factor performance has been maintained for a wide range of duty ration from 36% to 74%. By introducing this technique to the optical time division multiplexer, a highly stable and high-quality 40-Gb/s optical signal can be effectively produced without generating the short pulse or setting two tributaries at orthogonal polarization states, and without introducing high-speed electronics for signal multiplexing. The WDM-TDM conversion with an electroabsorption wavelength converter was extended to 60-Gb/s operation by using three 20-Gb/s tributaries. A clear eye opening was confirmed for a waveform after the WDM-TDM conversion of the 60-Gb/s signal     

Advanced Method for Single Crystal Casting of Turbine Blades for Gas Turbine Engines and Plants

A method for fabricating single crystal blades that combines the techniques of seed crystals and selection is suggested. The method realizes the advantages of both techniques, i.e., the high structural perfection and the possibility of fabricating single crystals with specified spatial orientation. Metallographic and x-ray diffraction analyses are used to study the processes of nucleation of the single crystal structure of blade castings fabricated from high-temperature nickel alloys by the method of selection and seed crystals. A commercial process for fabricating cast single crystal turbine blades by the new method is suggested.     

International legislation on trace elements as contaminants in food: a review

Environmental contaminants such as trace elements may be present in all foods. Foods, raw materials and ingredients for food production are to an increasing extent traded across borders. Hence, there is a need for international legislation on trace elements as contaminants in food. In 1961, the FAO and WHO established the Codex Alimentarius to elaborate international food legislation. Contaminants in food are handled by the Codex Committee for Food Additives and Contaminants (CCFAC). The Codex Alimentarius system for developing legislation concerning trace elements as contaminants in food is based upon the Codex General Standard for Contaminants and Toxins in Food (GSCTF). By October 2001, the principles for setting maximum limits (MLs) for contaminants in food are agreed, and work is in progress on MLs for trace elements such as lead and cadmium in the various food categories. The status for the proposals is presented and discussed. The EU Regulation 466/2001 of 8 March 2001 sets MLs for lead and cadmium in various foods. This regulation will apply from 5 April 2002. The EU regulation is more detailed but similar to the Codex draft standards for lead and cadmium in food. In future, legislators and administrators in the Codex and EU and analytical chemists will discuss how to use more and better analytical data as risk-management tools to protect public health. Trace elements' speciation is an important aspect of this discussion.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs