Mechanical bending of flexible complementary inverters based on organic and oxide thin film transistors

Flexible complementary inverters composed of p-channel pentacene thin-film transistors (TFTs) and n-channel amorphous indium gallium zinc oxide TFTs were fabricated on polymer substrates. The characteristics of the TFTs and inverters were evaluated at different bending radii. Throughout the bending experiments, the relationship between the performances of the inverters and the characteristics of the TFTs under mechanical deformation was analyzed. The mechanically applied strain led to a change in the voltage transfer characteristics of the complementary inverters, as well as the source–drain saturation current, field-effect mobility and threshold voltage of the TFTs. The switching threshold voltage of the fabricated inverters decreased with decreasing bending radius, which was related to changes in the field-effect mobility and the threshold voltage of the TFTs.     

Determination of the interface energy level alignment of a doped organic hetero-junction using capacitance–voltage measurements

A simple method based on capacitance–voltage (C–V) measurements is reported to determine the interface energy level alignment at the junction of 15 mol% Cs₂CO₃ doped 4,7-diphenyl-1,10-phenanthroline (BPhen) and 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HATCN) fabricated under high vacuum. The junction properties, such as the depletion layer thickness, built-in potentials and vacuum level shift were calculated with simple Mott–Schottky and Poisson’s equations with the boundary condition of a continuous electric flux density using the information from the C–V data. The interface energy level alignment determined by this method is well matched with the one determined using the in situ ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS) experiments performed under ultra-high vacuum. This method can be applied to other semiconductor junctions such as the organic p–n homojunctions and heterojunctions with known energy levels, as long as the metal/semiconductor contact is Ohmic without referring to the photoemission spectroscopies. Moreover, the energy level alignment determined by the C–V measurement gives a more realistic result since the films for the measurements are formed under high vacuum which is a normal device fabrication environment rather than under ultra high vacuum.     

Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites

p-Type Yb _z Fe_4?x Co _x Sb₁₂ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decreased slightly with increasing temperature, indicating that they were in a degenerate state due to high carrier concentrations of 10²⁰ cm^?3 to 10²¹ cm^?3. The Hall and Seebeck coefficients exhibited positive signs, indicating that the majority carriers are holes (p-type). The Seebeck coefficient increased with increasing temperature to maximum values of 100 μV/K to 150 μV/K at 823 K. The electrical and thermal conductivities were reduced by substitution of Co for Fe, which was responsible for the decreased carrier concentration. Overall, the Yb-filled Fe-rich skutterudites showed better thermoelectric performance than the Yb-filled Co-rich skutterudites.     

Name‐Based Autoconfiguration for Mobile Ad hoc Networks

In a mobile ad hoc network, difficulties exist in supporting address autoconfiguration and naming resolution due to the lack of centralized servers. This letter presents a novel approach, called name‐based autoconfiguration (NBA), which uses host names to determine IP addresses and provides address autoconfiguration and name resolution as a single protocol.     

Effect of Chromium Doping on the Thermoelectric Properties of Bi2Te3: Cr x Bi2Te3 and Cr x Bi2−x Te3

The thermoelectric (TE) properties of Bi₂Te₃ compounds intercalated and substituted with Cr, namely Cr _x Bi₂Te₃ and Cr _x Bi_2?x Te₃, respectively, have been investigated to study the influence of chromium on the TE properties of Bi₂Te₃. The Seebeck coefficients were found to be positive for all the samples in the temperature range between 300 K and 550 K. Although no effective enhancement of the Seebeck coefficient was observed, doping with Cr by means of either substitution or intercalation clearly not only improved the electrical conductivity but also lowered the thermal conductivity of Bi₂Te₃. As a result of the improvement, the figure of merit ZT is increased up to 0.8 and 0.65 at 300 K for 1% intercalated and 1% substituted Bi₂Te₃, respectively.     

掺杂铁电纳米粉的液晶的电光特性

铁电纳米粒子悬浮在向列相液晶母体中，增强介电各向异性，而且对施加的电场信号敏感。本文也展示了纳米粒子对所述复合材料可实现的总的相变的作用。这种方法也许可应用于设计新型显示材料。     

Virtual-node-based multicast routing and wavelength assignment in sparse-splitting optical networks

This paper investigates several problems associated with optical multicast routing and wavelength assignment in sparse-splitting optical networks for interactive real-time media distribution. Unfortunately, the constrained multicast routing with optimized wavelength assignment leads to NP-complete condition. Thus, in this paper, a virtual-node-based multicast routing algorithm is first proposed to satisfy the requirements of interactive real-time multicasting as well as the constraints from underlying optical networks. For the constructed multicast tree, we then associate an effective wavelength assignment algorithm. The experimental results show that the proposed algorithm combination performs well in terms of (1) the wavelength channel cost, (2) the maximum variation of inter-destination node delays, (3) the signal quality, and (4) the number of wavelength conversions.     

Applying Analytical Hierarchy Process to a WiMAX Performance Evaluation Model

Evaluating performance of individual features of WiMAX technology is a topic of widespread discussion. Currently, there is no quantitative way of measuring WiMAX technology so that wireless operators can meet their design objectives. This paper outlines a set of design criteria for WiMAX and provides a decision-making aid that ranks the importance of criteria using Analytic Hierarchy Process (AHP). This ranking should sufficiently reflect market expectations of the relative importance of various design criteria. A model integrating AHP priorities with enhanced Data Envelopment Analysis (DEA) is the basis for formulating a technological value in simple,comparable format. A case study is provided to show how this technological value is used to evaluate a three year network deployment plan. In the future, this model could be extended to WiMAX equipment suppliers for the purpose of validating performance targets of individual criteria, and enhancing supplier roadmaps for future network development.     

Instruction‐Level Power Estimator for Sensor Networks

In sensor networks, analyzing power consumption before actual deployment is crucial for maximizing service lifetime. This paper proposes an instruction‐level power estimator (IPEN) for sensor networks. IPEN is an accurate and fine grain power estimation tool, using an instruction‐level simulator. It is independent of the operating system, so many different kinds of sensor node software can be simulated for estimation. We have developed the power model of a Micaz‐compatible mote. The power consumption of the ATmega128L microcontroller is modeled with the base energy cost and the instruction overheads. The CC2420 communication component and other peripherals are modeled according to their operation states. The energy consumption estimation module profiles peripheral accesses and function calls while an application is running. IPEN has shown excellent power estimation accuracy, with less than 5% estimation error compared to real sensor network implementation. With IPEN's high precision instruction‐level energy prediction, users can accurately estimate a sensor network's energy consumption and achieve fine‐grained optimization of their software.