Modification of physicochemical properties of actin filaments suppresses cell fragmentation in the execution phase of staurosporine-induced apoptotic processes

Effects of jasplakinolide (JSP), a stabilizer of F-actin, and latrunculin A (LTA), a destabilizer of F-actin, on a series of events occurring in the execution phase of staurosporine (STS)-induced apoptotic processes were studied using human osteosarcoma 143B cells. Time-dependent apparent increases of the population of cells with collapsed membrane potential of mitochondria (Delta Psi(m)) caused by STS treatment were not due to actual decreases in the Delta Psi(m) per cell, but due to the fragmentation of cells resulting in decreases in the number of active mitochondria per cell. Decreases in the Delta Psi(m) in fragmented cells occurred late in the execution phase. Both JSP and LAT failed to prevent STS-induced release of cytochrome c from mitochondria followed by the activation of caspases 3 and 9, the cleavage of poly (ADP-ribose) polymerase (PARP) and apoptotic nuclear fragmentation. However, both drugs prevented STS-induced apoptotic cell fragmentation and decreases in the Delta Psi(m). These results indicate that physicochemical states of actin filaments play a certain role in the execution phase of STS-induced apoptotic processes.     

Contact-Barrier Free,High Mobility,Dual-Gated Junctionless Transistor Using Tellurium Nanowire

The gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology nodes. In particular, the junctionless nanowire transistors are highly scalable with reduced variability due to avoidance of steep source/drain junction formation by ion implantation. Here a dual-gated junctionless nanowire p-type field effect transistor is demonstrated using tellurium nanowire as the channel. The dangling-bond-free surface due to the unique helical crystal structure of the nanowire, coupled with an integration of dangling-bond-free, high quality hBN gate dielectric, allows for a phonon-limited field effect hole mobility of 570 cm² V⁻¹ s⁻¹ at 270 K, which is well above state-of-the-art strained Si hole mobility. By lowering the temperature, the mobility increases to 1390 cm² V⁻¹ s⁻¹ and becomes primarily limited by Coulomb scattering. The combination of an electron affinity of ≈ 4 eV and a small bandgap of tellurium provides zero Schottky barrier height for hole injection at the metal-contact interface, which is remarkable for reduction of contact resistance in a highly scaled transistor. Exploiting these properties, coupled with the dual-gated operation, we achieve a high drive current of 216 μA μm⁻¹ while maintaining an on-off ratio in excess of 2 × 10⁴. The findings have intriguing prospects for alternate channel material based next-generation electronics.     

High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

C₆₀ and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C₆₀ thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility μ value of 0.41 cm² V^?1 s^?1, while the picene thin film FET showed p-channel enhancement-type characteristics with the μ of 0.61 cm² V^?1 s^?1. The μ values recorded for C₆₀ and picene thin film FETs are comparable to those for C₆₀ and picene thin film FETs with Au electrodes.     

Design of Fully Balanced Analog Systems Based on Ordinary and/or Modified Single-Ended Opamps

The system architectures, which allow a high performance fully balanced (FB) system based on ordinary/modified single-ended opamps to be implemented, are investigated and the basic and general requirements are formulated. Two new methods of an FB analog system design, which contribute towards achieving both a high performance IC system implementation and a great reduction of the design time are presented. It is shown that a single-ended system based on any type of opamp (rail-to-rail, constant g _m , etc.), realized in any technology (CMOS, bipolar, BiCMOS, GaAs), can be easily and effectively converted to its FB counterpart in a very practical way. Using the proposed rules, any FB system implementation with opamps (data converter, modulator, filter, etc.) requires only a single-ended system version design and the drawbacks related to a conventional FB system design are avoided. The principles of the design are pointed out and they are verified by experimental results.     

Application of an electron backscatter diffraction pattern to Cu damascene-fabricated interconnections filled by a high-pressure anneal process

The microstructure of Cu interconnections fabricated by high-pressure annealing was evaluated using a field emission scanning electron microscope/electron backscatter diffraction pattern (FE-SEM/EBSP) technique, and the results are compared with as-deposited and normally annealed Cu films. The results show some grains extending from the bulk field to the via regions in the case of the high-pressure annealed Cu films. The existence of via holes was also observed, in which all grains were (111) oriented. This indicates that the high-pressure annealing process enables the Cu that in-fills the via holes to develop into favorable microstructures, i.e., single-crystal and with (111) orientation.     

A Reliable All-2D Materials Artificial Synapse for High Energy-Efficient Neuromorphic Computing

High-performance artificial synaptic devices are indispensable for developing neuromorphic computing systems with high energy efficiency. However, the reliability and variability issues of existing devices such as nonlinear and asymmetric weight update are the major hurdles in their practical applications for energy-efficient neuromorphic computing. Here, a two-terminal floating-gate memory (2TFGM) based artificial synapse built from all-2D van der Waals materials is reported. The 2TFGM synaptic device exhibits excellent linear and symmetric weight update characteristics with high reliability and tunability. In particular, the high linearity and symmetric synaptic weight realized by simple programming with identical pulses can eliminate the additional latency and power consumption caused by the peripheral circuit design and achieve an ultralow energy consumption for the synapses in the neural network implementation. A large number of states up to ≈3000, high switching speed of 40 ns and low energy consumption of 18 fJ for a single pulse have been demonstrated experimentally. A high classification accuracy up to 97.7% (close to the software baseline of 98%) has been achieved in the Modified National Institute of Standards and Technology (MNIST) simulations based on the experimental data. These results demonstrate the potential of all-2D 2TFGM for high-speed and low-power neuromorphic computing.     

Block Copolymer Permeable Membrane with Visualized High‐Density Straight Channels of Poly(ethylene oxide)

A simple fabrication, scalable to centimeter scale, of a permeable membrane made of block copolymer containing molecular transport channels is demonstrated by coating photo‐crosslinkable liquid‐crystalline block copolymer, consisting of poly(ethylene oxide) (PEO) and poly(methacrylate) (PMA) bearing stilbene (Stb) mesogens in the side chains (PEO₁₁₄‐b‐PMA(Stb)₅₂), onto a sacrificial cellulose acetate film substrate. After thermal annealing, perpendicularly aligned and hexagonally arranged PEO cylindrical domains with a surface density of 10¹¹ cm^?2 were formed and then fixed efficiently by photo‐crosslinking the stilbene moieties in the PMA(Stb) domains by [2 + 2] dimerization. The fully penetrating straight PEO cylindrical domains across the 480‐nm‐thick membrane were well‐defined and visualized as molecule‐transport channels. After exfoliated by removal of the cellulose acetate layer, the membrane could be transferred onto another substrate by either scooping or a horizontal lifting method. Throughout the processes, the fully penetrating PEO channels across the membrane are preserved to open at both ends. A simple permeation experiment demonstrates that rhodamine dyes permeate efficiently through the PEO cylindrical channels of the annealed membrane but not across a non‐annealed one.     

Fabrication of carbon nanofibers using only ion beam irradiation to glassy carbon

Carbon nanofibers (CNFs) and carbon nanotubes (CNTs) are new carbon-based materials. However, the production of CNFs and CNTs is very difficult due to the complicated processes and high temperature involved. Therefore, a method of fabrication is required that enables high throughput at a low cost.Our previous study reported that oxygen ion beam energy of 500 eV applied to glassy carbon (GC) forms the finest pitch conical anti-reflection (AR) structures, and that an irradiation time of more than 24 min fabricates conical AR structures with heights of more than 250 nm. After the fabrication of the AR structures, irradiation by an argon ion (Ar⁺ beam changes the surface morphology, and oblique angle irradiation can form CNFs. Thus, we carried out oblique Ar⁺ beam irradiation on conical carbon protrusions on GC fabricated by oxygen ion beam irradiation. As a result, CNFs have been formed using oxygen and argon ion beam irradiation at room temperature. In addition, multi-wall CNT can be obtained by two-step ion beam irradiation.     

In-Plane Coupling of Light From InP-Based Photonic Crystal Band-Edge Lasers Into Single-Mode Waveguides

In this paper, we analyze the coupling of light from photonic-crystal band-edge lasers into single-mode waveguides. Both active and passive devices lie in the same plane and coupling of light is achieved by using parabolic and nanotapers in InP based epitaxial structures. Two- and three-dimensional finite-difference time-domain methods are employed to analyze these devices. Coupling efficiencies higher than 80% can be obtained with parabolic couplers. We also present laser configurations that can reduce multiwavelength coupling of light into single-mode waveguides, using structures that are similar to coupled cavity Fabry-Peacuterot lasers