在高温,高压,氢环境中21／4Cr—1Mo钢及其焊接接头KIH的测试

采用恒位移试验方法，在高温、高压、氢环境中用ＷＯＬ试样测试了２１４Ｃｒ－１Ｍｏ钢及其焊接接头的应力腐蚀门限应力强度因子ＫＩＨ。试验结果表明：采用恒位移试验方法测试高温、高压、氢环境中２１４Ｃｒ－１Ｍｏ钢及其焊接接头的ＫＩＨ是可行的。     

Surface modification and functionalization of electroactive polymer films via grafting of polyelectrolyte,polyampholyte and polymeric acids

Films of electroactive polymers, such as polyaniline (PAN) in its emeraldine base form, and poly(3-alkylthiophene), poly(3-hexylthiophene) (P6TH), poly(3-octylthiophene) (P8TH), and poly(3-dodecylthiophene) (P12TH) can be readily functionalized via thermal or near ultraviolet-light-induced surface graft copolymerization with monomers of polyelectrolyte, polyampholyte and polymeric acids. The monomers used in the present work include dimethyl sulphate quaternized dimethylamino-ethylmethacrylate (DMAEM·C₂H₆SO₄), 3-dimethyl(methacryloyloxyethyl)ammonium propane sulphonate (DMAPS), acrylic acid (AAc) and a sodium salt of styrene sulphonic acid (NaSS). The surface structures and compositions of the electroactive polymer films after functionalization via graft copolymerization were characterized by angle-resolved X-ray photoelectron spectroscopy. Graft copolymerization of poly(3-alkylthiophene) films, but not PAN films, with the hydrophilic monomers readily results in a stratified surface microstructure arising from the migration of the hydrophilic graft chains beneath a thin surface layer which is much richer in the substrate chains. On the other hand, graft copolymerization of PAN films with AAc and NaSS readily gives rise to a self-protonated (and thus conductive) surface structure.     

锥形件拉深压边力数学模型的建立

本文用逐步选择因素组合法，对锥形件拉深临界压边力试验数据进行了处理，所得数学模型比一般逐步回归法具有更高的精度和可靠性，模型更为完善。     

流动微量量热法研究阴离子表面活性剂在油砂表面的吸附

用流动微量量热法研究了十二烷基硫酸钠(SDDS)和十二碳羧酸钠(SL)在克拉玛依油田九区和乌尔禾区油砂上的吸附,简要地计论了吸附机理。所得实验结果表明,SL 在油砂上的吸附强度比 SDDS 的要大,在相当低的浓度下即可迟到饱和吸附。     

Clinical and experimental observation of xilixin granule combined with radiotherapy in treating malignant-tumors

Thirty six patients of pulmonary or nasopharyngeal carcinoma were treated with Xilixin granule (XLXG) combined with radiotherapy and compared their efficacy with that of 31 patients treated by Zhenqi Fuzheng granule combined with radiotherapy for control. Results showed that the symptoms of Yin Deficiency syndrome in treated group were obviously improved, the leucocyte decreased by 5.6%, while in control group it reached 25.8%, the 3 year survival rate was significantly higher in treated group (75.0%) than that in control group (51.6%). Animal experiment revealed that XLXG had the effects of tumor inhibition, it could increase white blood cells, platelets and hemoglobin of patients, especially in using large dosage. These results suggested that XLXG have some protective effect against radiotherapeutic damage in patients with malignant tumor.     

Dynamic oxide voltage relaxation spectroscopy

A new method for trap characterization of oxidized silicon is described. The Dynamic Oxide Voltage Relaxation Spectroscopy (DOVRS) is an improved version of the formerly proposed Oxide Voltage Relaxation Spectroscopy (OVRS) technique which applies a periodic long duration constant current for tunneling injection. It has been demonstrated that the new technique can be used not only to separate and identify the oxide trap from interface trap, but also to separate and determine the centroid from the oxide trap density generated in the MOS system by the tunneling current stress. In the pulse constant current mode, the OVRS measurement can be completed instead of using the double current-voltage technique. Thus the new method results in more accurate and quicker measurements of the oxide trap centroid. Analytical expressions for computing the paramaters of the interface and oxide traps are derived. The effect of the channel carrier mobility on the spectroscopy is also considered. Two types of oxide and two types of interface traps were observed at a pulse constant Fowler-Nordheim current stress by the new method of DOVRS     

Expert system application for the loading capability assessment oftransmission lines

This paper describes the application of an expert system for the evaluation of the short-term thermal rating and temperature rise of overhead conductors. The expert system has been developed using a database and Leonardo expert system shell which is gaining popularity among commercial tools for developing expert system applications. The expert system has been found to compare well when evaluated against site tests. A practical application is given to demonstrate the usefulness of the expert system developed     

Usefulness and limitations of thyrotropin measurements as a first-line test for follow-up of Graves'' patients

Although the good appearance and biocompatibility of dental porcelains, failures are still of considerable concern because of the limited properties to all ceramic system. Physical properties that might be considered ideal include high strength, resistance to abrasion, and resistance to the hostile oral environment. Porcelain has been considered by many of its physical characteristic are similar to those of enamel. In 1983 a new modality of treatment, the etched porcelain restoration was introduced by Simonsen and Calamia. Numerous investigations have shown the strength of the etched porcelain bonded to composite resin and also the clinical success of this porcelain to be used as laminated veneers and etched inlays and onlays.     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source