快速预热处理对大直径CZ-Si中FPDs及清洁区的影响

研究了不同气氛下快速预热处理(RTA)后,硅片中的流动图形缺陷(FPDs)密度和随后两步热处理形成的魔幻清洁区(MDZ)之间的关系.硅片经过高温快速预热处理后,再经过800℃(4h)+1000℃(16h)常规退火,以形成MDZ.研究发现,当硅片在Ar气氛或N2/O2(9%)混合气氛下RTA预处理后,FPDs密度较低,随后热处理出现的氧沉淀诱生缺陷密度较高、清洁区较宽.对于N2/O2混和气氛,随着O2含量的增加,FPDs和氧沉淀诱生缺陷密度变小,纯O2气氛下预处理后硅片中FPDs和氧沉淀诱生缺陷密度最低.因此,可以通过调节N2/O2混合气氛中两种气氛的比例来控制空洞型微缺陷和硅片体内氧沉淀诱生缺陷的密度.     

Si基外延GaN中位错的光助湿法化学显示

采用1000W卤钨灯作为光源,对GaN外延膜在KOH溶液中进行化学腐蚀,以显示晶体位错.采用扫描电子显微镜、原子力显微镜观察位错密度及表面形貌,得到了清晰的腐蚀图形.提出了腐蚀机理,光照激发位错处产生电子-空穴对,加速位错处的腐蚀速率.GaN表面出现了大量的六角腐蚀坑(位错露头).优化了KOH溶液的腐蚀条件.     

PD SOI MOSFET低频噪声研究进展

随着器件尺寸的不断减小,PD SOI器件的低频噪声特性对电路稳定性的影响越来越大.研究了PD SOI器件低频过冲噪声现象,分析了此类器件在发生浮体效应、栅致浮体效应以及前背栅耦合效应时低频过冲噪声的产生机理及影响因素.最后指出,可以通过添加体接触或将PD SOI器件改进为双栅结构,达到有效抑制低频过冲噪声的目的.     

利用EDA技术改革电子学实践教学

本文总结了EDA技术改造"电子学"课程的实践教学环节工作思路,通过搭建学生自主学习平台夯实理论知识和EDA基础知识,通过案例教学和网络学习平台激发学习兴趣、培养自学能力,教学中应用EDA技术引入实际工程培养学生研究能力,以课外科技问题研究实现创新意识的培养,实践教学改革收到了预期效果。     

A 3–10 GHz Ultra Wideband Receiver LNA in 0.13 \mu m CMOS

A fully integrated low-power, low-complexity ultra wideband (UWB) 3–10 GHz receiver front-end in standard 130 nm CMOS technology is proposed for UWB radar sensing applications. The receiver front-end consists of a full UWB band low-noise amplifier and an on-chip diplexer. The on-chip diplexer has a 1 dB insertion loss and provides a \(-\) 30 dB isolation. The diplexer switch was co-designed with the receiver input matching network to optimize the power matching while simultaneously achieving good noise matching performance. The receiver low-noise amplifier provides a 3–10 GHz bandwidth input matching and a power gain of 17 dB. The overall receiver front-end consumes an average power of 13 mW. The core area of the transceiver circuit is 500 \(\mu \) m by 700 \(\mu \) m.     

基于不变矩特征的红外成像制导跟踪算法研究

随着红外成像制导技术的发展,它对制导跟踪算法的精度和实时性的要求越来越高。制导系统已被要求在20 ms的时间内输出跟踪结果。某些跟踪算法虽然效果较好,但达不到实时输出。经典的制导算法-相关跟踪算法主要基于像素灰度特征进行跟踪,无法解决跟踪过程中由于目标的旋转、膨胀以及仿射变换带来的跟踪点漂移问题。为了解决经典相关跟踪算法无法解决图像旋转时的跟踪稳定性问题以及目标图像急剧膨胀时的跟踪点漂移问题,研究了图像不变矩的特征。利用图像不变矩的旋转-伸缩-平移不变性,选择合适的不变矩特征用于跟踪。通过用归一化的乘法相关函数以及基于相关系数值的模板更新策略设计跟踪算法,解决了复杂背景及强噪声条件下不能对尺寸和形状发生变化的目标进行稳定跟踪的问题。     

单片集成式氮化镓基发光二极管的设计与制造

We report a new monolithic structure of GaN-based light-emitting diode(LED) which can be operated under high voltage or alternative current. Differing from the conventional single LED chip, the monolithic lightemitting diode(MLED) array contains microchips which are interconnected in series or parallel. The key chip fabrication processing methods of the monolithic LED array include deep dry etching, sidewall insulated protection, and electrode interconnection. A 12 V GaN-based blue high voltage light emitting diode was designed and fabricated in our experiment. The forward current-voltage characteristics of MLEDs were consistent with those of conventional single junction light emitting diodes.     

COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs

The two-dimensional numerical simulation of energy transport for MOSFETs ispresented,in which the effect of generation,recombination and temperature gradient of carrierson the characteristics of devices are considered.An improved mobility model is also proposed.The numerical results of micron and submicron MOSFETs show that the present model fitsexperiment very well.     

铌酸锂γ射线辐照色心缺陷的研究

对铌酸锂晶体进行γ射线辐照处理，吸收光谱显示基础吸收边紫移，４８０ｎｍ波长附近出现一明显吸收峰，这是由空位色心Ｖ０和Ｎｂ＾４＋缺陷引起的，Ｎｂ＾４＋的存在进一步被ＥＰＲ实验所证实。本文对上述辐照缺陷的产生机理进行了讨论。