Eliminating memory for fragmentation within partitionable SIMD/SPMDmachines

Efficient data layout is an important aspect of the compilation process. A model for the creation of perfect memory maps for large-scale parallel machines capable of user-controlled partitionable single-instruction-multiple data/single-program-multiple data (SIMD/SPMD) operation is developed. The term perfect implies that no memory fragmentation occurs and ensures that the memory map size is kept to a minimum. A major constraint on solving this problem is based on the single program nature of both the SIMD and SPMD modes of parallelism. It is assumed that all processors within the same submachine used identical addresses to access corresponding data items in each of their local memories. Necessary and sufficient conditions are derived for being able to create perfect memory maps, and results are applied to several partitionable interconnection networks     

Loss modeling and thermal measurement in planar inductors-a case study

This paper covers the experimental investigation and theoretical calculation of losses in a planar inductor under load. Finite-element software is used to perform the loss calculations. Thermally controlled experiments are performed for a range of frequencies to validate the corresponding finite-element method loss calculations. The thermal dependence of the loss mechanisms is also considered.     

The synthesis of distillation-based separation systems

The last dozen years have produced almost 50 English language articles on the synthesis of separation systems [1]. Most work has considered separating a single relatively ideal mixture into sharply split, usually pure-component products using systems of single-feed, two-product distillation columns. Of late, the work has considered heat-integrating these columns to reduce energy consumption. Present research will very likely produce valuable results for nonsharp separations.Earlier approaches developed both algorithmic- and heuristic-based tree search algorithms for discovering the better systems of non-heat-integrated columns. New results permit the design of heat-integrated systems.The paper highlights the above developments.     

Special numbers,still proceedings,other novelties

Modifications of solid water and their transitions are described as they relate to cryo electron microscopy. In particular, the various amorphous states (amorphous polymorphs) as they exist below 100 K are extensively investigated. The “high-density” midification exhibits a lower viscosity than the “low-density” form. Differences are also observed in the mechanism of void formation due to electron irradiation: in the high-density form, voids are formed — not, however, in the low-density form. Together with the reaction to radiation damage, the physical properties of amorphous solid water are discussed with respect to embedding of organic specimens. Finally, the conditions and pitfalls associated with preparation of thin and entirely vitrified ice layers by shock-freezing are described.     

K-winner networks.

A special class of mutually inhibitory networks is analyzed, and parameters for reliable K-winner performance are presented. The network dynamics are modeled using interactive activation, and results are compared with the sigmoid model. For equal external inputs, network parameters that select the units with the larger initial activations (the network converges to the nearest stable state) are derived. Conversely, for equal initial activations, networks that select the units with larger external inputs (the network converges to the lowest energy stable state) are derived. When initial activations are mixed with external inputs, anomalous behavior results. These discrepancies are analyzed with several examples. Restrictions on initial states are derived which ensure accurate K-winner performance when unequal external inputs are used.     

Langmuir-Blodgett deposited cadmium gate inverted InP-GaInAs modulation-doped field-effect transistors

We report on the Langmuir-Blodgett film deposition and plasma etching of cadmium distearate on n-Gao.47Ino.53As to form a high-barrier-height Schottky barrier. Using this technique to form the gate electrode, we fabricated a 1?m-gate-length inverted InP-GalnAs modulation-doped field-effect transistor (MODFET) with an extrinsic transconductance of 170mS/mm and a cutoff frequencyfT of 19 GHz.     

Intercomparison of scanning probe microscopes

Comparison measurements on reference standards are reported in which 13 partners with different instruments took part. A set of prototype standards which had been produced and calibrated within a European project were used for the measurements. Here, results of measurements on a 240 nm step height standard and a two-dimensional lateral standard with a nominal pitch of 1 μm are reported.