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71.
基于神经网络技术的f0F2短期预报方法   总被引:1,自引:1,他引:1  
利用神经网络技术并考虑太阳和地磁活动对电离层的影响,提出一种提前1h预报电离层临界频率f0F2的方法.网络的输入包括时间、季节、地磁指数、太阳黑子数.太阳射电流量F10.7以及f0F2偏离月中值的一阶和二阶有限差和相对偏差.分别用广州和兰州站的历史数据进行检验,预报结果与观测数据符合得较好,比国际参考电离层更具有实用性.  相似文献   
72.
动态特征是海洋信息中的重要方面。但是在通常的SAR图像处理中动态信息往往会被丢失,因为这些方法大多把SAR图像看成是观测区域的瞬时状态。实际上,我们可以从SAR子孔径序列图像中获取动态信息,因为我们知道SAR不同方位向孔径对应不同的成像瞬间。从序列图像中获取动态信息的一个关键步骤就是图像匹配。但是SAR子孔径图像的强噪声特性使得传统的图像匹配算法难以奏效。该文中,为了应对SAR子孔径图像中的噪声问题,我们提出了一种改进的相位相关法。仿真实验表明改进的算法在多数情况下都可以达到0.15像素以上的精度以及很好的噪声鲁棒性。分析表明,该方法可以适用于从中等分辨的机载SAR图像和高分辨的星载SAR图像中提取动态特征,速度提取精度可以达到0.15-0.3 m/s。该文将该方法用于一个实际的机载SAR图像的处理,反演的海面动态速度在0.05-0.5 m/s左右,这个速度范围符合海面上一般的流速范围。  相似文献   
73.
A novel asymmetric MOSFET with no lightly doped drain on the source side is simulated on bulk Si using a device simulator (SILVACO). To overcome the problems of the conventional asymmetric process, a novel asymmetric MOSFET using a mesa structure and a sidewall spacer gate is proposed, and it provides a self-alignment process, aggressive scaling, and better uniformity. First of all, we have compared the simulated characteristics of the asymmetric and symmetric MOSFETs. Basically, both asymmetric and symmetric MOSFETs have an n-type channel and the same physical parameters. Compared with the symmetric MOSFET, the asymmetric MOSFET shows better device performance. Moreover, we have successfully fabricated 50-nm asymmetric NMOSFETs based on simulation results and investigated its operation and characteristics.  相似文献   
74.
In the frequency-response masking (FRM) approach, the complexity of two masking filters is heavily dependent on the interpolation factor and the cutoff frequencies of the bandedge shaping filter. In this paper, we propose a novel structure that decouples the masking filters from the bandedge shaping filter. The design equations together with the design procedures are presented. With the introduction of an additional decoupling stage, the complexity of the overall filter can be greatly reduced. Our example shows that more than 40% savings in the numbers of multipliers and adders can be achieved compared with the original FRM approach.  相似文献   
75.
To verify three important circuit schemes suitable for DRAMs in mobile applications, a 1.8-V 128-Mb SDRAM was implemented with a 0.15-/spl mu/m technology. To achieve an ideal 33% efficiency, the double boosting pump uses two capacitor's series connection at pumping phase, while they are precharged in parallel. The hybrid folded current sense amplifier together with a novel replica inverter connection improved power and speed performances. Also, a dual-referenced adjustment scheme for a temperature sensor was proposed to allow a very high accuracy in tuning. Without loss in productivity, the implemented dual-referenced searching technique achieved tuning error of less than /spl plusmn/2.5/spl deg/C.  相似文献   
76.
This study proposes an equivalent-circuit model for the composite right/left-handed (CRLH) coplanar waveguide (CPW) comprising the series interdigital capacitor and shunt meandering short-circuited stub inductor in symmetric configuration. The new technique for extracting the equivalent-circuit elements of the CRLH CPW, which include inductances, capacitances, and resistances to represent the left-handed, right-handed, and lossy characteristics, is developed based on the effective medium concept. The applications to the compact resonators and filters are presented to emphasize the unique features of the CRLH CPW. A novel CRLH CPW resonator with a 0/spl deg/ effective electrical length at resonance is proposed, which gives a 49.1% size reduction when compared with the conventional half-wavelength resonator at 5 GHz. Based on the zeroth-order CRLH CPW resonators, an inductively coupled two-pole bandpass filter with 5.4% 3-dB bandwidth and 2.7-dB insertion loss at 5 GHz is implemented, and it is 51.4% more compact than the conventional structure. A good agreement among the results of the full-wave simulation, equivalent-circuit model, published data, and measurement demonstrates the effectiveness of the proposed modeling technique. To suppress the higher order harmonic spurious passbands, the electromagnetic-bandgap CPW structures are incorporated into the proposed CRLH CPW filter.  相似文献   
77.
Fe-doped ZnO powders have been synthesized by the coprecipitation method using zinc nitrate [Zn(NO3)2·6H2O] as starting material, urea [CO(NH2)2] as precipitator, and ferric nitrate [Fe(NO3)3·9H2O] as doping source. The microstructure of the prepared powders has been characterized by x-ray diffraction and scanning electron microscopy. Results show that, when the molar ratio of Fe to (Zn + Fe) was less than 0.09, the prepared powder was ZnO(Fe) solid solution, and the ZnFe2O4 impurity phase appeared when the Fe doping content was further increased. The electric permittivity in the frequency range of 8.2 GHz to 12.4 GHz and the average infrared emissivity in the wavelength range of 8 μm to 14 μm have been determined for the prepared powders. The average infrared emissivity decreased with increasing Fe doping content. The real (ε′) and imaginary part (ε″) of the permittivity of the prepared powders showed opposite trends. When the molar ratio of Fe to (Zn + Fe) was 0.03, the prepared Fe-doped ZnO powder demonstrated the best microwave absorption in the frequency range of 8.2 GHz to 12.4 GHz.  相似文献   
78.
垃圾邮件过滤技术分析   总被引:9,自引:0,他引:9  
徐洪伟  方勇  音春 《通信技术》2003,(10):126-128
主要介绍基于邮件的过滤技术,对目前邮件过滤采用的模式———单机模式和将来可能采用的模式———网络模式做了个评估,并重点介绍了在单机模式中的一种基于邮件内容的过滤算法———贝叶斯算法,以及这种算法的不足和改进。  相似文献   
79.
多路传输总线通信接口(MBI)是航空电子系统的通信基石,航空电子系统的任一分系统都要通过MBI才能进入1553B通信系统中.在MBI中,最关键的器件是1553B协议芯片.概述了先进1553B协议芯片BU-61586的组成和功能,以及采用该芯片设计的与型号任务使用的UT-MBI兼容的新MBI设计方案.该方案解决了国内对国外重要元器件的单一依赖现状,目前已经得到了广泛的应用.  相似文献   
80.
Epitaxial PZT (001) thin films with a LaNiO3 bottom electrode were deposited by radio-frequency (RF) sputtering onto Si(001) single-crystal substrates with SrTiO3/TiN buffer layers. Pb(Zr0.2Ti0.8)O3 (PZT) samples were shown to consist of a single perovskite phase and to have an (001) orientation. The orientation relationship was determined to be PZT(001)[110]∥LaNiO3(001)[110]∥SrTiO3 (001)[110]∥TiN(001)[110]∥Si(001)[110]. Atomic force microscope (AFM) measurements showed the PZT films to have smooth surfaces with a roughness of 1.15 nm. The microstructure of the multilayer was studied using transmission electron microscopy (TEM). Electrical measurements were conducted using both Pt and LaNiO3 as top electrodes. The measured remanent polarization P r and coercive field E c of the PZT thin film with Pt top electrodes were 23 μC/cm2 and 75 kV/cm, and were 25 μC/cm2 and 60 kV/cm for the PZT film with LaNiO3 top electrodes. No obvious fatigue after 1010 switching cycles indicated good electrical endurance of the PZT films using LaNiO3 electrodes, compared with the PZT film with Pt top electrodes showing a significant polarization loss after 108 cycles. These PZT films with LaNiO3 electrodes could be potential recording media for probe-based high-density data storage.  相似文献   
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