Experimental and theoretical studies on a distributed temperaturesensor based on Brillouin scattering

Results are reported from recent research on the use of the Brillouin gain/loss mechanism for distributed sensing. A theoretical model of the interaction of the pulsed and CW beams is described and compared with experiments. Results from a system with a 51 km sensing length are presented. We finally investigate issues related to the variation within the sensing fiber of the polarizations of the two beams     

A soft switching active snubber optimized for IGBT's in singleswitch unity power factor three-phase diode rectifiers

This paper describes a soft switching active snubber for an IGBT operating in a single switch unity power factor three-phase diode rectifier. The soft switching snubber circuit provides zero-voltage turn-off for the main switch. The high turn-off losses of the IGBT due to current tailing are reduced by zero-voltage switching. This allows the circuit to be operated at very high switching frequencies with regulated DC output voltage, high quality input current and unity input power factor. Simulation and experimental results are included     

Applications of ultrashort pulse propagation in Bragg gratings forwavelength-division multiplexing and code-division multiple access

We discuss theoretical and experimental studies on the propagation of ultrashort pulses through fiber Bragg gratings. We also consider several applications in optical communications to be found by combining ultrashort pulses and fiber Bragg gratings: a multiwavelength source for wavelength-division-multiplexed systems and a means for implementing optical code-division multiple access     

COIL中BHP浓度对发生O_2(~1△)的影响

本文实验研究了BHP的浓度对产生O2（1△）的影响。实验结果表明：当BHP浓度大于3.5M时，Cl2利用率以及O2（1△）的产率将不依赖于BHP浓度的变化而变化，同时，实验结果表明，使用低浓度的BHP对COIL的操作是可行的。     

Transient behavior of subthreshold characteristics of fullydepleted SOI MOSFETs

It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested     

Simulation study of peak junction temperature and power limitationof AlGaAs/GaAs HBTs under pulsed and CW operation

The authors have used a 3-D transmission-line matrix (TLM) modeling method to study the junction temperature distribution and power limitation of device geometries with multiple embedded heat sources. Peak values of the junction temperature against the dissipated power density under both pulsed and CW operation are presented for a typical power AlGaAs/GaAs HBT structure. These data should facilitate the rapid determination of junction temperature for a given output power, which is of paramount importance in power device design     

层状催化剂颗粒的优化设计——双组分等温平行反应体系

针对双组分等温平行反应体系,分析讨论了以提高催化剂活性和选择性为目标时催化剂活性组分的最优分布形式(为δ-函数分布),并给出了确定这种反应体系的催化剂的最佳活性层位置的计算方法。结果表明:以提高选择性为目标的最佳活性层位置比以提高活性为目标的要更靠近催化剂核心,实用的最优位置应介于二者之间。最后,本文还研究了反应动力学级数、本性选择性以及内扩散模数(Thiele 模数)等因素对最佳活性层位置的影响。     

All-optical photonic switches using integrated inverted asymmetricFabry-Perot modulators and heterojunction phototransistors

InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using `normally on' modulator pixels exhibit an output on-off ratio of 12:1 with internal optical gain of 4 dB. The photonic switches using `normally off' modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing