基于Mega8单片机和AD9833的正弦波信号发生器

正弦波信号作为一种基准信号广泛应用于各种电路中，产生正弦波信号的方法有很多种，DDS（Direct Digital Frequency Synthesis直接数字频率舍成器）作为一种新型技术，具有相对带宽宽，频率转换时间短，频率分辨率高，控制灵活方便等优点，成为现代频率合成技术中的佼佼者。AD公司生产的AD9833是一款低功耗、可编程波形发生器，在Mega8单片机的控制下可生成0-12．5MHz的正弦波，还可以生成三角波和方波。经现场验证，基于Mega8单片机和AD9833的正弦波信号发生器，可以非常方便地生成各种频率的正弦波。     

AVO属性交会图解释技术在碳酸盐岩储层预测中的应用

AVO属性交会图解释技术是通过正演模型提取AV0属性，再根据模型和实际地震数据在AVO属性交会图上的分布关系，建立储层岩性参数、含流体特征与AVO属性间的对应关系。该法以模型正演分析为基础，以地震数据AVO属性为外推控制条件，将地震、地质和测井信息紧密地结合起来，从而达到识别储层的目的。本文以川东LJZ地区飞仙关鲕滩储层为例，通过对已知钻、测井资料分析和模型正演，确定鲕滩储层的地震属性响应模式及其交会图上的分布特征，识别储层岩性和含流体性质，进而确定储层的气水界面。     

国内涤纶长短丝供需形势分析与发展预测

分析了１９９５年国内涤纶长丝、短纤的供需状况。预测了１９９６年及未来几年的发展趋向及需求量。指出涤纶应朝着差别化方向发展，重点开发仿毛、仿丝、异形涤纶纤维。     

舰用燃气轮机框架模型的模态参数识别

本文采用一次有理正交多项式－多模态曲线合法对一舰用燃气轮机框架模型进行了实验模态分析，以Ｆｏｒｓｙｔｈｅ复合交多项式作为频响函数的理论值，用实测的频响函数建立系数矩阵，来寻找使目标函数最小的最优值，本文在ＨＰ９８２６微机上建立了建立了测试，数据采集及参数识别等系统识别软件，给出了具有工程实用意义的前五阶振动模态参数，识别结果和有限元计算相比较，令人满意。     

Excavation of Inlet Tunnels at Geheyan Power Station

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Synthesis,Functionalization, and Bioconjugation of Monodisperse,Silica‐Coated Gold Nanoparticles: Robust Bioprobes

Herein, we report an efficient process for preparing monodisperse Au@SiO₂ nanoparticles using homogeneous shaking and without the use of surface‐coupling silane agents or large stabilizers. The resulting pure‐silica surface of the Au@SiO₂ nanoparticles is very important for straightforward surface functionalization with different functional groups via well‐established silica surface chemistry. Subsequent covalent bioconjugation of the aldehyde‐functionalized Au@SiO₂ nanoparticles with various biomolecules is successfully employed to make robust nanoprobes for fast, colorimetric DNA and protein detection based on the sequence‐specific hybridization properties of DNA and the specific binding affinity between proteins, respectively.     

微波场中光纤探头温升的研究

当把光纤温度传感器置于微波场中测温时，由于受电磁场的作用，传感头内部将有能量损耗，以致发生测温偏差。本文将传感头简化成有限长圆柱，计算出在微波场中传感头的能量损耗和温度变化。最后还分析了一种实际热色效应光纤温度传感器。     

Improvement of device performances by thin interlayer in conjugated polymers/methanofullerene plastic solar cell

Recent studies have reported that a thin interlayer between poly(3, 4-ethylene dioxythiophene)-poly(styrene sulfonic acid) (PEDOT: PSS) and an emissive polymer layer leads to a large increase in the performances of polymer light-emitting diodes (PLEDs) by preventing significant quenching of the radiative excitons at the PEDOT: PSS interface; therefore, acting as an efficient exciton-blocking layer. Using the similar idea, a thin interlayer was fabricated between PEDOT: PSS and the active layer of conjugated polymers/methanofullerene composites in a plastic solar cell. The interlayer consisted of a poly(fluorene)-based hole transporter spin-coated directly on top of the PEDOT: PSS layer. The devices with the interlayer exhibited a higher efficiency than in those without the interlayer.     

A self-aligned gate III-V heterostructure FET process forultrahigh-speed digital and mixed analog/digital LSI/VLSI circuits

A planar ion-implanted self-aligned gate process for the fabrication of high-speed digital and mixed analog/digital LSI/VLSI integrated circuits is reported. A 4-b analog-to-digital converter, a 2500-gate 8×8 multiplier/accumulator, and a 4500-gate 16×16 complex multiplier have been demonstrated using enhancement-mode n⁺ -(Al,Ga)As/MODFETs, superlattice MODFETs, and doped channel heterostructure field-effect transistors (FETs) whose epitaxial layers were grown by molecular-beam epitaxy. With nominal 1-μm gate-length devices, direct-coupled FET logic ring oscillators with realistic circuit structures have propagation delays of 30 ps/stage at a power dissipation of 1.2 mW/stage. In LSI circuit operation, these gates have delays of 89 ps/gate at a power dissipation of 1.38 mW/gate when loaded with an average fan-out of 2.5 gates and about 1000 μm of high-density interconnects. High-performance voltage comparator circuits operated at sampling rates greater than 2.5 GHz at Nyquist analog input rates and with static hysteresis of less than 1 mV at room temperature. Fully functional 4-b analog-to-digital circuits operating at frequencies up to 2 GHz were obtained