2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study

We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method     

Transient simulation of heterojunction photodiodes-part II:analysis of resonant cavity enhanced photodetectors

The high-speed response properties of resonant cavity enhanced (RCE) photodetectors have been investigated. The limitations on the high-speed performance of photodiodes and the advantages of RCE-detection are discussed. Transient response of heterojunction photodiodes under pulsed optical illumination has been simulated using the method described in Part I. Results on conventional AlGaAs/GaAs and RCE GaAs/InGaAs heterojunction p-i-n photodiodes are presented. For small area detectors, almost 50% bandwidth improvement along with a two-fold increase in efficiency is predicted for RCE devices over optimized conventional photodiodes. A nearly three-fold enhancement in the bandwidth-efficiency product was shown     

Early detection of ageing in solder joints through laser probe thermal analysis of the peltier effect

We have recently developed an optical contactless method for testing the quality of solder joints during accelerated thermal cycling ageing processes.¹ The method was based upon the measurement of the dynamic thermal behaviour of the joint to short bursts of Joule heating. It has proved to be efficient in revealing the formation of cracks at the lead-solder interface. We present a method to evaluate ageing at a much earlier stage in the cycling process. We have observed in earlier work,¹ that before cracks appear, structural changes occur in the solder at the lead-solder interface. The thermal response of the solder joint is recorded over time to a Peltier heat perturbation produced by flowing a current pulse through the interface where structural changes occur. The key point in this method is to discriminate the Peltier effect from the Joule thermal response because both effects generate heat. The variation of the early Peltier response in the thermal cycling ageing tests is seen as a quantitative signature of the structural changes in the lead-solder interface.     

Optimality of the sequential probability ratio test fornonstationary observations

Bayesian analysis is used to show that Wald's sequential probability ratio test with varying thresholds is optimal for the nonstationary situation, where the observed samples are independent but not identically distributed. Some important properties useful for the design of the test thresholds are discussed. Wald's lower bound, generalized to the nonstationary situation, is also presented. The results have important applications in situations where the observed signal is time-varying. such as in radar signal processing, image processing, and spread spectrum communications     

Simple approximations of the DC flux influence on the core losspower electronic ferrites and their use in design of magnetic components

The effect of DC flux on the core loss is examined for the practical range of power and frequency. Relevant core loss equations are derived and applied to an optimization algorithm to determine the minimum core loss at a given ratio of s (DC flux density to AC peak flux density). It has been found that the curves of hysteresis loss density versus the ratio of s exhibit a peak at a critical ratio. Below or above this critical ratio, the loss density decreases drastically. On the other hand, the curves of eddy-current loss density versus the ratio of s exhibits a minimum point at a critical ratio. Below or above this critical ratio, the loss density increases gradually     

Performance analysis of linear multiuser detectors for randomlyspread CDMA using Gaussian approximation

The performance of a linear decorrelating detector (LDD) and a minimum mean square error (MMSE) detector is analyzed for random spreading waveforms. The performance of the LDD and MMSE detectors is expressed in terms of the so-called near-far resistance, defined by a reciprocal of a diagonal component of inverse matrix. For random code division multiple access, which employs random spreading waveforms, the near-far resistance can be regarded as a random variable. Many papers have dealt with the analysis of multiuser detectors for random spreading sequences. In most cases, however, these analyses derived only the expectations or bounds for the near-far resistance. In this paper, we directly derive the approximate probability density function (PDF) of the near-far resistance and corresponding bit error rate expression for random spreading sequences. It is based on Gaussian approximation of the cross correlation between any two randomly generated spreading codes. The resulting PDF turned out to be a reversed-and-scaled version of chi-square distribution. The approximate expressions, both the PDF and the corresponding bit error rate expression, were verified via Monte Carlo simulations. The results showed that the approximation is quite close to the simulation results when the number of users is less than half the processing gain     

Electrical properties of N2O/NH3 plasma grownoxynitride on strained-Si

Growth of ultrathin (<100 Å) oxynitride on strained-Si using microwave N₂O and NH₃ plasma is reported. X-ray photoelectron spectroscopy (XPS) results indicate a nitrogen-rich layer at the strained-Si/SiO₂ interface. The electrical properties of oxynitrides have been characterized using a metal-insulator-semiconductor (MIS) structure. A moderately low value of insulator charge density (6.1×10¹⁰ cm^-2) has been obtained for NH₃ plasma treated N₂O oxide sample. Nitrided oxide shows a larger breakdown voltage and an improved charge trapping properties under Fowler-Nordheim (F-N) constant current stress