低掺杂浓度Nd:YVO4激光器的输出特性研究

在对Nd:YVO_4晶体的掺杂浓度和晶体长度对激光器性能的影响进行了分析后,报道了利用掺杂浓度为0.3at％,通光长度为10mm的Nd:YVO_4晶体作为增益介质,带光纤耦合的激光二极管端面抽运的Nd:YVO_4激光器。在抽运功率为27.365W时,获得了14.85W的TEM_(00)模输出,光一光转换效率为60.49％,斜效率达64.5％。     

钕铁硼在低音扬声器磁路中的应用

介绍适用于低音扬声器的两种不同充磁方向磁体联合应用磁路。讨论了联合应用磁路所用钕铁硼磁体的压制成型、磁性能检验、装配和充磁。     

Orientation-based unique representation for planar curves and shapes

This paper presents an orientation-based representation for planar curves and shapes. The new representation can uniquely represent all types, of planar shapes, be it convex, nonconvex, polygonal, smoothly curved, or piecewise smooth shapes. It is based on a new parameterization, theabsolute integral orientation. This representation is invariant under translation and rotation. The absolute integral orientation is a parameter invariant under scaling. As a result, matching of similar shapes (i.e., determination of the relative orientation and the scaling factor) using the absolute integral orientation as the parameter is easier than using the arclength as the parameter. In addition, the new representation has the feature of adaptive sampling, making it more compact and efficient than arc-length-based representations.     

含钡合金在钢液中的脱氧行为研究

在MoSi2炉上采用MgO质坩蜗对钢管进行了含钡合金脱氧行为的研究。实验中钡系合金主要选取SiAUBa、SiCaBa、SiAlBaCa、SiAlBeCaSr及用于钙处理的SiCa包芯线，选用Al作为对比脱氧剂，考察了钡系合金脱氧的全氧含量，脱氧产物的分布、尺寸和形貌，探讨了钡系合金脱氧和对夹杂物变性作用的机理。     

论高层建筑中央空调水系统水压试验的步骤

通过对中央空调水系统安装的特点分析,确定了应用效果良好的试压步骤。     

随机模拟在电信网性能评价中的应用

本文介绍了可在微机上实现大规模电信网践模拟的实用化软件ＳＩＭＵＮＥＴ，及基所采用的无时钟事件追踪法。该软件可用规划中的电信网络和实际网路的模拟及性能评价，也可用于不同流量控制算法的评价。文中给出一个评价实例。     

雾化水流计算模式

本文描述了雾化水流现象并提出了雾化水流的一个计算模型。得出了雾化水流影响领域的各种不同的计算公式和方法。     

反井钻及其在我国水电工程的应用

本文介绍了反井钻这一新型的竖井和斜井开挖施工设备，以及该设备在国内水电工程中的应用。实践证明，在适当的地质地形条件下，反井钻比人工正井法、吊罐、阿里马克爬罐法都具有明显的优越性，值得在国内其它水电工程中推广应用。     

A novel technique for profiling the lateral n- dopingconcentrations of submicron LDD MOS devices

This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n^- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n^- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology     

VHDL逻辑综合及FPGA实现

运用ＶＨＤＬ语言描述了一个１２×１２位的高速补码阵列乘法器。重点是运用ＶＨＤＬ逻辑综合优化该乘法器，并进行了乘法器的ＸｉｌｉｎｘＦＰＧＡ实现、功能仿真和时序仿真。经选用ＸＣ４００５ＰＣ－８４－４芯片进行验证，证明了其正确性