高温酸化助排剂HC2-1的研究

为了满足高温油藏和深井酸化作业残酸返排的需要，通过表面活性剂的筛选和复配研究，得到了高温酸化助排剂HC2—1。其性能评价结果表明，HC2—1具有使用浓度低、表面活性高的特点，在20％的HCI溶液中，当其浓度为50mg／L时，表面张力为20．7mN／m；具有良好的耐温性能，在180℃下恒温48h，HC2—1仍保持较高的表面活性；具有良好的耐盐能力，加有HC2—1的20％HCl溶液和CaCO3反应至HCl完全消耗，整个反应过程体系无新相生成且表面张力基本不变；可增大酸液体系的润湿角，进一步降低毛细管阻力，使酸液返排率由46％提高到97％，在促进酸液返排的同时与原油不发生乳化反应。     

变频器的组成与常见故障及维修对策

本文介绍了变频器组成结构及相应故障与维修对策。     

PLC的大型牵伸卷绕机的应用研究

本文介绍了大型牵伸卷绕机的计算机控制系统，以西门子MMV型变频器为驱动装置，西门子PLC300为控制核心，根据西门子USS协议和MPI协议，实现PLC与变频器、TP27触摸显示屏的通信，取得了较高的控制精度和稳定性，充分满足生产过程的需要，具有广阔的应用前景。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

新产品研发是建陶企业可持续发展的核心

新世纪我国建陶企业在整个国民经济的带动下将进一步发展，入世后经济全球化的市场竞争格局，建陶企业只有走新产口研发之路，严格企业管理，才会在日趋激烈的市场竞争中得以生存和可持续发展。     

Speed superiority of scaled double-gate CMOS

Unloaded ring-oscillator simulations, performed with a generic process/physics-based compact model for double-gate (DG) MOSFETs and supplemented with model-predicted on-state currents and gate capacitances for varying supply voltages (V_DD), are used to show and explain the speed superiority of extremely scaled DG CMOS over the single-gate (e.g., bulk-Si) counterpart. The DG superiority for unloaded circuits is most substantive for low V_DD < ~1 V     

水泥生产中预加水成球微机控制系统

叙述水泥生产中以ＳＴＤ８０９８微机系统为核心组成的生料预加水成球控制系统的构成、工作原理及软件结构。该系统目前已在云阳钢铁厂水泥分厂投入使用，效果良好，成球合格率在９０％以上。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Evaluating the impact of CASE: an empirical comparison of retrospective and cross-sectional survey approaches

The purpose of this paper is to evaluate two methods of assessing the productivity and quality impact of Computer Aided Software Engineering (CASE) and Fourth Generation Language (4GL) technologies: (1) by the retrospective method; and (2) the cross-sectional method. Both methods involve the use of questionnaire surveys. Developers' perceptions depend on the context in which they are expressed and this includes expectations about the effectiveness of a given software product. Consequently, it is generally not reliable to base inferences about the relative merits of CASE and 4GLs on a cross-sectional comparison of two separate samples of users. The retrospective method that requires each respondent to directly compare different products is shown to be more reliable. However, there may be scope to employ cross-sectional comparisons of the findings from different samples where both sets of respondents use the same reference point for their judgements, and where numerical rather than verbal rating scales are used to measure perceptions.