Auger lifetimes in ideal InGaSb/InAs superlattices

Quantitative calculations are reported of both band-to band Auger and radiative recombination lifetimes in thin-layered type II In_xGa_1−x Sb/InAs superlattices with energy gaps in the 5–17 μm range, using accurate band structure and numerical techniques. Results for an 11 μm superlattice are compared with similar calculations for bulk HgCdTe and a HgTe/CdTe superlattice having the same energy gap. The results show the n-type Auger rates to be comparable and the p-type rates to be suppressed by three orders of magnitude in some experimentally realizable structures. Thus, well fabricated III–V superlattices appear to be excellent candidates as a new class of infrarer detectors.     

InGaAs/InGaAsP MQW optical amplifier integrated withgrating-assisted vertical-coupler noise filter

A photonic integrated circuit with an InGaAs/InGaAsP multiple-quantum-well (MQW) traveling-wave optical amplifier and a grating-assisted vertical-coupler filter as a noise filter have been demonstrated. A fiber-to-amplifier/filter gain of ~0.5 dB and a 3-dB filter bandwidth (FWHM) of ~70 Å at 1.56 μm filter center wavelength have been achieved. This photonic circuit is potentially suitable as a building-block for preamplifier lightwave receivers or high-gain, high-power optical amplifiers which are essential for optical communication systems and lightwave networks     

Improved performances of a S-SEED using extremely shallowquantum-wells and asymmetric Fabry-Perot cavity structure

The authors report significantly improved performances of a symmetric self-electrooptic-effect device (S-SEED), with high on-off contrast ratio (>30:l) and large optical bistability loop widths (ΔP=44%) at an applied bias of V_a=0 V, i.e., with no power supply. The S-SEED is made of extremely shallow quantum wells (ESQWs) in an asymmetric Fabry-Perot (AFP) cavity structure. At V_a =5 V ΔP increased by up to 95%, preserving the high contrast ratio. The reflectivity changes at V_a=0 and 5 V were about 15% and 30%, respectively. These are believed to be the largest values ever reported for such structures     

2 cm long monolithic multisection laser for active modelocking at 2.2 GHz

A 2 cm long three-contact multisection laser has been fabricated for modelocking at very low repetition rates. Active modelocking yields 8.0-12.3 ps pulses at 2.2, 4.3 and 6.5 GHz corresponding to the fundamental, first, and second harmonics of the cavity resonance frequency. This device demonstrates the feasibility of fabricating monolithic pulse sources operating at rates as low as the OC-48 Sonet transmission rate (2.488 Gbit/s).<>     

Scale and rotation invariant pattern recognition using complex-log mapping and augmented second order neural network

A scale and rotation invariant pattern recognition system using complex-log mapping (CLM) and an augmented second order neural network (SONN) is proposed. CLM is very useful for extracting the scale and rotation invariant features. The results are, however, given in a wrap-around translated form. This problem is solved with an augmented SONN. Experimental results show that the proposed system has improved recognition performance.<>     

A PLL clock generator with 5 to 10 MHz of lock range formicroprocessors

A microprocessor clock generator based on an analog phase-locked loop (PLL) is described for deskewing the internal logic control lock to an external system lock. This PLL is fully generated onto a 1.2-million-transistor microprocessor in 0.8-μm CMOS technology without the need for external components. It operates with a lock range from 5 to 110 MHz. The clock skew is less than 0.1 ns, with a peak-to-peak jitter of less than 0.3 ns for a 50-MHz system clock frequency     

A DBR laser tunable by resistive heating

A distributed Bragg reflector (DBR) laser tuned by resistive heating is presented. It has a tuning range greater than 10 nm with only a 33% reduction in output power and a 10% increase in linewidth. Its behavior is easily modeled, agreeing well with simple theory     

A 120-mm2 64-Mb NAND flash memory achieving 180 ns/Byteeffective program speed

Emerging application areas of mass storage flash memories require low cost, high density flash memories with enhanced device performance. This paper describes a 64 Mb NAND flash memory having improved read and program performances. A 40 MB/s read throughput is achieved by improving the page sensing time and employing the full-chip burst read capability. A 2-μs random access time is obtained by using a precharged capacitive decoupling sensing scheme with a staggered row decoder scheme. The full-chip burst read capability is realized by introducing a new array architecture. A narrow incremental step pulse programming scheme achieves a 5 MB/s program throughput corresponding to 180 ns/Byte effective program speed. The chip has been fabricated using a 0.4-μm single-metal CMOS process resulting in a die size of 120 mm² and an effective cell size of 1.1 μm²     

CDMA Mobile System Testbed and Field Test

This paper briefly explains the configuration of CDMA Mobile System (CMS) test bed. The measured fading and delay results of CDMA signal in Taejon area are shown. In comparison to other cellular systems, there are more parameters in the CDMA systems that affect system performance and capacity. We performed the optimization test of the selected parameters and present the effect of each parameter on the performance. This paper presents the capacity and performance test results of CMS. The capacity test was performed on ETRI site of three sectors in Taejon area. The performance tests include call completion rate, busy hour call attempt, and the delay characteristics of voice.     

Nonfullerene Electron Transporting Material Based on Naphthalene Diimide Small Molecule for Highly Stable Perovskite Solar Cells with Efficiency Exceeding 20%

This study reports a new nonfullerene electron transporting material (ETM) based on naphthalene diimide (NDI) small molecules for use in high‐performance perovskite solar cells (PSCs). These solar cells simultaneously achieve high power conversion efficiency (PCE) of over 20% and long‐term stability. New NDI‐ID (N,N′‐Bis(1‐indanyl)naphthalene‐1,4,5,8‐tetracarboxylic diimide) consisting of an N‐substituted indane group having simultaneous alicyclic and aromatic characteristics is synthesized by a low‐cost, one‐step reaction, and facile purification method. The partially flexible characteristics of an alicyclic cyclopentene group on indane groups open the possibility of low‐temperature solution processing. The conformational rigidity and aromaticity of phenyl and alicyclic groups contribute to high temporal stability by strong secondary bonds. NDI‐ID has herringbone packed semiconducting NDI cores that exhibit up to 0.2 cm² V^?1 s^?1 electron mobility in field effect transistors. The inverted PSCs based on CH(NH₂)₂PbI_3–xBr_x with NDI‐ID ETM exhibit very high PCEs of up to 20.2%, which is better than that of widely used PCBM (phenyl‐C61‐butyric acid methyl ester) ETM‐based PSCs. Moreover, NDI‐ID‐based PSCs exhibit very high long‐term temporal stability, retaining 90% of the initial PCE after 500 h at 100 °C with 1 sun illumination without encapsulation. Therefore, NDI‐ID is a promising ETM for highly efficient, stable PSCs.