首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   128031篇
  免费   1651篇
  国内免费   1199篇
电工技术   1570篇
综合类   2372篇
化学工业   18327篇
金属工艺   7912篇
机械仪表   4486篇
建筑科学   3108篇
矿业工程   720篇
能源动力   2638篇
轻工业   6297篇
水利工程   1626篇
石油天然气   1740篇
无线电   13321篇
一般工业技术   27505篇
冶金工业   9844篇
原子能技术   1046篇
自动化技术   28369篇
  2021年   425篇
  2020年   345篇
  2019年   439篇
  2018年   15151篇
  2017年   14067篇
  2016年   10772篇
  2015年   1232篇
  2014年   1161篇
  2013年   2874篇
  2012年   4704篇
  2011年   11419篇
  2010年   9877篇
  2009年   7402篇
  2008年   8482篇
  2007年   9597篇
  2006年   1599篇
  2005年   2469篇
  2004年   2323篇
  2003年   2281篇
  2002年   1630篇
  2001年   1239篇
  2000年   1168篇
  1999年   1077篇
  1998年   2179篇
  1997年   1694篇
  1996年   1506篇
  1995年   1007篇
  1994年   790篇
  1993年   801篇
  1992年   630篇
  1991年   612篇
  1990年   543篇
  1989年   500篇
  1988年   389篇
  1987年   409篇
  1986年   372篇
  1985年   411篇
  1984年   336篇
  1983年   327篇
  1982年   325篇
  1981年   330篇
  1980年   379篇
  1979年   365篇
  1978年   316篇
  1977年   432篇
  1976年   648篇
  1975年   318篇
  1974年   301篇
  1973年   325篇
  1972年   286篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
971.
As the growth temperature of molecular beam epitaxial GaAs is increased from 250 to 400°C, the dominant conduction changes from hopping conduction to band conduction with a donor activation energy of 0.65 eV. A 300°C grown layer is especially interesting because each conduction mechanism is dominant in a particular temperature range, hopping below 300K and band conduction above. Below 140K, the hopping conduction is greatly diminished (quenched) by irradiation with either infrared (hv≤1.12 eV) or 1.46 eV light, but then recovers above 140K with exactly the same thermal kinetics as are found for the famous EL2. Thus, the 0.65 eV donor, which is responsible for both the hopping and band conduction, is very similar to EL2, but not identical because of the different activation energy (0.65 eV vs 0.75 eV for EL2).  相似文献   
972.
Modeling of neural systems by use of neuronal modes   总被引:2,自引:0,他引:2  
A methodology for modeling spike-output neural systems from input-output data is proposed, which makes use of “neuronal modes” (NM) and “multi-input threshold” (MT) operators. The modeling concept of NMs was introduced in a previously published paper (V.Z. Marmarelis, ibid., vol.36, p.15-24, 1989) in order to provide concise and general mathematical representations of the nonlinear dynamics involved in signal transformation and coding by a class of neural systems. The authors present and demonstrate (with computer simulations) a method by which the NMs are determined using the 1stand 2nd-order kernel estimates of the system, obtained from input-output data. The MT operator (i.e., a binary operator with multiple real-valued operands which are the outputs of the NMs) possesses an intrinsic refractory mechanism and generates the sequence of output spikes. The spike-generating characteristics of the MT operator are determined by the “trigger regions” defined on the basis of data. This approach is offered as a reasonable compromise between modeling complexity and prediction accuracy, which may provide a common methodological framework for modeling a certain class of neural systems  相似文献   
973.
Extremely low frequencies (ELFs) are employed to transmit data from underground to the ground surface in the measurement-while-drilling electromagnetic (MWD-EM) telemetry system. Based on electromagnetic field theory, the present work is aimed at predicting the receivability of the signals at the surface. A unified analytic method that is suitable for vertical, directional, or horizontal wells is presented. Attenuation properties are examined for various parameters, including the Earth's conductivity, operating frequency and the length of the drill string. The frequency dependence of the receivability in reference to a noise level is illustrated for different depths of well and different cases. It is also demonstrated that the electric field distributions at the surface have the same features for the three types of well, and that the measurements should be carried out near the well heads for any type of well. A scale model experiment is made to test the authors' theoretical results. The measured data and the computed results are comparable  相似文献   
974.
Noise measurements with a GaAs MESFET employed as a photodetector or as an optoelectronic mixer are reported. Despite its higher noise it is shown that with proper biasing the GaAs MESFET provided a higher carrier-to-noise ratio than a pin photodiode, and as an optoelectronic mixer provided a comparable signal-to-noise ratio to that of a conventional pin and microwave mixer combination. The implications of using GaAs MESFETs in these configurations are discussed.<>  相似文献   
975.
An analysis of a wide rectangular radiating slot excited by a microstrip line is described. Coupled integral equations are formulated to find the electric current distribution on the feed line and the electric field in the aperture. The solution is based on the method of moments and using the space domain Sommerfeld-type Green's function. The information about the input impedance or reflection coefficient is extracted from the electric current distribution on the microstrip line utilizing the matrix pencil technique. The theoretical analysis is described and data are presented and compared with other theoretical and experimental results  相似文献   
976.
Split-polarity transformation (SPT), which is incorporated into conventional linearly constrained minimum variance (LCMV) beamformers to decorrelate the desired signal from interference, is presented. The SPT processor does not distort the direction vectors associated with wave fronts impinging on the array, but it does reverse the phase of the signal coming from a specified direction. With the aid of SPT processing, the signal cancellation due to correlation between the desired signal and interference is almost eliminated. The design of a robust SPT processor for combating the effects of mismatch between idealized array model and actual scenario arising from causes such as sensor location, amplitude, and phase errors is discussed. A detailed performance study of the SPT-LCMV beamformer shows it to be robust against direction uncertainty in the assumed look direction. Numerical results are presented to demonstrate the effectiveness of the SPT-LCMV beamforming scheme is a coherent interference environment  相似文献   
977.
The problem of joint estimation of time delay and Doppler shift is considered from the point of view of the Wigner distribution of the signal. A very efficient method of obtaining the optimum signal with minimum estimation error based on the convexity of the design region is developed. Practical applications, however, require the signal to satisfy other constraints which present complications in acquiring the optimum signal. A design approach based on the method of simulated annealing is suggested to solve for the optimum signal under constraints. The performance of the signals so obtained is evaluated and compared with that of signals obtained by synthesis  相似文献   
978.
Various wireless systems and the research preceding their practical use in China are described. The topics discussed include research establishments, research and development projects underway, challenges inherent to digital radio, and expansion opportunities afforded by satellite communications  相似文献   
979.
1.5 mu m compressive-strained multiquantum-well gain-coupled distributed-feedback lasers have been fabricated on semi-insulating InP substrates with very low parasitic capacitance for studying the laser dynamic characteristics. A maximum 3 dB bandwidth of 12.8 GHz under small signal modulation, a 20 dB down chirping width of 0.33 nm under modulation, a 20 dB down chirping width of 0.33 nm under 5 Gbit/s NRZ pseudorandom modulation, and a low chirping short pulse of 20 ps under gain switching are obtained.<>  相似文献   
980.
A rigorous formulation of capacitance changes during trap filling processes is presented and used to accurately determine the electron capture cross section of EL2 in GaAs at a particular temperature, 377K, in this case. The value, σn (377K) = 2.7 × 10−16 cm2, is compared with that predicted from the emission dependence.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号