GHJMn高抗磨合金衬板在大型水泥磨机上的应用

自1882年英国工程师R·A·哈特菲尔德发明标准奥氏体高锰钢(ZGMn13)以来,由于这种韧性较好的耐磨材料,自身具备加工硬化(冷作硬化)的机械性能,诱发A→M相变,可获得高强度、高硬度(HB500以上),从而提高材料耐磨性和使用寿命的特性.所以,一直能够沿用至今天.     

辽河减压渣油中金属铁的赋存与分布特征

考察了辽河减渣在吸附分离、酸性溶液萃取和沥青质轻度降解过程中金属铁的分布和转移情况。结果表明，辽河减渣中有近90％的铁富集在胶质和沥青质中，部分铁以侧链较短的环烷酸盐或酚盐形式存在，部分铁连接在沥青质分子的侧链上，或是被包裹在沥青质大分子中。     

高校材料专业职业应用型人才培养知识体系的构建

根据人才市场对材料科学与工程专业本科生的素质、知识和能力要求，结合材料专业自身功能特性，系统分析了不同能力培养阶段的知识构成，提出了普通高校材料专业应用型人才培养的知识体系模块和课程体系。     

拉西瓦水电站工程反拱水垫塘优化设计

在大型高水头水电站中,拉西瓦水电站是我国第一座采用反拱形水垫塘作为特高拱坝坝后消能建筑物的工程,也是我国现有特高拱坝水垫塘中长度最短、宽度最小的工程,其单位水体消能率接近国际经验控制的最高标准。在无规范明确规定和缺少工程资料的情况下,经一系列科研试验和数值计算,优化了反拱水垫塘结构和排水、抽水系统设计等。其经验丰富了我国坝后消能建筑物的设计内容,对我国规范中反拱水垫塘设计规定以及对其他大型高水头水电站坝后消能防冲建筑物的设计具有重要参考价值。     

SiCf/SiC陶瓷复合材料的研究进展

SiCf/SiC陶瓷复合材料具有良好的力学性能、高温抗氧化性和化学稳定性，是航空航天和原子能等领域理想的新一代高温结构材料。本文概述了增强体SiCt的发展状况及存在的问题，对SiCt/SiC材料的制备工艺、界面相的研究状态、材料的损伤破坏机理和目前的应用研究进展做了综述，并分析了SiCf/SiC陶瓷复合材料的研究重点和发展前景。     

固体中光声拉曼效应的理论分析

从非线性波动方程出发，运用准平衡模型以及热弹理论，对固体样品中光声拉曼效应进行理论分析，导出了脉冲激光泵浦下光声拉曼信号的解析表达式，并总结分析了固体中光声拉曼效应的一些原理特性、实验问题和应用价值。     

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.     

Preparation of Pb(Zr0.52Ti484848)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

In this paper we report the fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films on Si-on-Insulator (SOI) substrates with and without an electrode by pulsed excimer laser deposition combined with rapid thermal annealing. Based on the structural and interfacial characteristics analysis by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and automatic spreading resistance measurement (ASR), the film structure and orientation were revealed to be dependent on the annealing time and annealing temperature as well as deposition temperature. From RBS spectra and XTEM observation it is shown that the PZT thin films did not interact with the top silicon layers of SOI and that the composition of the film was similar to the target. The ASR measurements showed that the electrical properties of PZT/SOI as well as PZT/Pt/SOI were abrupt, and that the electrical properties of the SOI substrates were still good after the PZT growth.     

初论带状光纤缆结构设计

推导出了成叠带状光纤在松套管中余长的两个计算公式，此两公式是带状光纤缆结构设计需要用到的基本公式。此外，还对带状光纤缆结构设计作了初步讨论。