On the role of high-energy electrons in the formation of a plasma-beam discharge structure in a diode with a slit cathode

The spatial structure of visible emission from plasma of a transverse nanosecond pulsed electric discharge in a gas-filled diode with a hollow (slit) cathode has been experimentally studied. A relation is established between the regime of electron energy relaxation and the plasma-beam discharge structure formation. High values of the electron emission coefficient are observed in the experiment, which cannot be explained using the notion of electron emission from a cathode bombarded by fast heavy particles.     

Studying chaotic microwave oscillations in a TWO with depressed collector

Broadband chaotic oscillations were monitored in a depressed potential collector of a traveling-wave oscillator (TWO). This signal appears due to the oscillations of a virtual cathode, which is formed in the spent electron beam under the action of retarding fields existing in the multistage depressed collector.     

Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices

The optical properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices have been studied. It is demonstrated that, using such superlattices of various design and thickness and with additional InAs monolayer spacers, it is possible to control the wavelength of room-temperature emission from InGaAsN quantum wells within 1.3–1.6 μm without deteriorating the output radiation characteristics, which opens additional prospects for the development of lasers on GaAs substrates for telecommunication applications.     

Piezoresistive Behavior Study on Finger‐Sensing Silicone Rubber/Graphite Nanosheet Nanocomposites

A novel finger‐sensing nanocomposite with remarkable and reversible piezoresistivity is successfully fabricated by dispersing homogeneously conductive graphite nanosheets (GNs) in a silicone rubber (SR) matrix. Because of the high aspect ratio of the graphite nanosheets, the nanocomposite displays a very low percolation threshold. The SR/GN nanocomposite with a volume fraction of conductive nanosheets closest to that for the percolation threshold presents a sharp positive‐pressure coefficient effect of the resistivity under very low pressure, namely, in the finger‐pressure range (0.3–0.7 MPa), whereby the abrupt transition could be attributed to compressive‐stress‐induced deformation of the conducting network. The super‐sensitive piezoresistive behavior of the nanocomposite is accounted for by an extension of the tunneling conduction theory which provides a good approximation to the piezoresistive effect.     

The structure and thermo EMF of a nanotubular carbon deposit formed in electric discharge plasma

We have studied the structure and thermo emf of a nanotubular carbon deposit formed in electric arc discharge plasma. The deposit contains flocky granules with dimensions of 15–20 μm within a 20–60 μm-thick layer on the substrate surface. This deposit is characterized by a sufficiently high thermo emf (60 μV/K) and electric conductivity (600 Ω⁻¹ m⁻¹).     

Experimental Investigation of FRP-Strengthened RC Beam-Column Joints

The results of a comprehensive experimental program, aimed at providing a fundamental understanding of the behavior of shear-critical exterior reinforced concrete (RC) joints strengthened with fiber reinforced polymers (FRP) under simulated seismic load, are presented in this study. The role of various parameters on the effectiveness of FRP is examined through 2/3-scale testing of 18 exterior RC joints. Conclusions are drawn on the basis of certain load versus imposed displacement response characteristics, comprising the strength (maximum lateral load), the stiffness, and the cumulative energy dissipation capacity. The results demonstrate the important role of mechanical anchorages in limiting premature debonding, and they provide important information on the role of various parameters, including: area fraction of FRP; distribution of FRP between the beam and the column; column axial load; internal joint (steel) reinforcement; initial damage; carbon versus glass fibers; sheets versus strips; and effect of transverse beams.     

The Influence of Ir and Pt Addition on the Synthesis of Fullerenes at Atmospheric Pressure

The addition of metallic Ir and Pt to a fullerene-forming, atmospheric-pressure plasma reactor was found to influence the generation of carbonaceous products. It was observed that the added metals were efficiently dispersed into the plasma and that their presence increased the yield of fullerenes. The addition of Ir led to a noticeable shift in the fullerene distribution towards C₆₀, whereas the addition of Pt increased the proportion of C₆₀ oxides and decreased the proportion of higher fullerenes. Addition of Ir also caused a reduction of the soot particle size and the formation of a considerable quantity of carbon nanotubes.     

Parallel path consistency

Filtering algorithms are well accepted as a means of speeding up the solution of the consistent labeling problem (CLP). Despite the fact that path consistency does a better job of filtering than arc consistency, AC is still the preferred technique because it has a much lower time complexity. We are implementing parallel path consistency algorithms on multiprocessors and comparing their performance to the best sequential and parallel arc consistency algorithms.^(1,2) (See also work by Kerethoet al. ⁽³⁾ and Kasif⁽⁴⁾) Preliminary work has shown linear performance increases for parallelized path consistency and also shown that in many cases performance is significantly better than the theoretical worst case. These two results lead us to believe that parallel path consistency may be a superior filtering technique. Finally, we have implemented path consistency as an outer product computation and have obtained good results (e.g., linear speedup on a 64K-node Connection Machine 2).     

High-gain pseudomorphic InGaAs base ballistic hot-electron device

A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In _0.12Ga_0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In_0.12Ga_0.88As was estimated to be about 380 meV