Elaboration and Characterization of Amorphous Silicon Carbide Thin Films (a-SiC) by Sputerring Magnetron Technique for Photoelectrochemical CO2 Conversion

Silicon - Semiconductors as photoelectric catalysis is recognized as a promising strategy for simultaneous face energy crisis and environmental pollution. In this study, amorphous silicon carbide...     

Energy levels,oscillator strengths,and radiative rates for Si-like Zn XVII,Ga XVIII,Ge XIX,and As XX

The energy levels, oscillator strengths, line strengths, and transition probabilities for transitions among the terms belonging to the 3s²3p², 3s3p³, 3s²3p3d, 3s²3p4s, 3s²3p4p and 3s²3p4d configurations of silicon-like ions (Zn XVII, Ga XVIII, Ge XIX, and As XX) have been calculated using the configuration-interaction code CIV3. The calculations have been carried out in the intermediate coupling scheme using the Breit–Pauli Hamiltonian. The present calculations have been compared with the available experimental data and other theoretical calculations. Most of our calculations of energy levels and oscillator strengths (in length form) show good agreement with both experimental and theoretical data. Lifetimes of the excited levels have also been calculated.     

Electrochemical fabrication of complex copper oxide nanoarchitectures via copper anodization in aqueous and non-aqueous electrolytes

Described is the synthesis of various copper oxide nanostructured thin films by anodization of Cu foil in aqueous and ethylene glycol electrolytes containing hydroxide, chloride and/or fluoride ions at room temperature. The nanostructure topology was found to depend on the pH of the anodization electrolyte, KOH concentration, applied voltage and the presence of chloride and fluoride ions. Our results demonstrate the opportunity to grow complex copper oxide nanostructured films possessing sub-micron thick layers by a simple and straightforward electrochemical route. Although no film was observed on the Cu surface when the anodization was carried out at 10 V in KOH solutions with pH ≤ 10, various nanoarchitectures were formed upon increasing the electrolyte pH in the presence of chloride ions. Replacing chloride ions with fluoride ions resulted in the formation of highly porous nanoarchitectures. A simple mechanism for the formation of such porous structures is proposed. Anodizing in ethylene glycol-based electrolytes resulted in the formation of leaf-like nanoarchitectures up to 500 nm in thickness. XPS analysis was performed to study the composition of the formed nanoarchitectures. Vacuum annealing of the material at 280 °C resulted in the formation of porous Cu₂O nanoarchitectures.     

Relation between chemical Structure and Absorption Spectra of Monoazo Dyes containing the benzo(b)thiophene nucleus and its derivatives

The ultraviolet and visible absorption spectra of some azo dyes containing the benzo(b)-thiophene, benzo(b)thiophene-1,1-dioxide and 2,3-dihydrobenzo(b)thiophene-1,1-dioxide moieties are investigated in correlation to their molecular structure. It was found that the position of absorption bands depends upon the type of moieties attached to the azo centre.     

Shared Cache Based on Content Addressable Memory in a Multi-Core Architecture

Modern shared-memory multi-core processors typically have shared Level 2 (L2) or Level 3 (L3) caches. Cache bottlenecks and replacement strategies are the main problems of such architectures, where multiple cores try to access the shared cache simultaneously. The main problem in improving memory performance is the shared cache architecture and cache replacement. This paper documents the implementation of a Dual-Port Content Addressable Memory (DPCAM) and a modified Near-Far Access Replacement Algorithm (NFRA), which was previously proposed as a shared L2 cache layer in a multi-core processor. Standard Performance Evaluation Corporation (SPEC) Central Processing Unit (CPU) 2006 benchmark workloads are used to evaluate the benefit of the shared L2 cache layer. Results show improved performance of the multicore processor’s DPCAM and NFRA algorithms, corresponding to a higher number of concurrent accesses to shared memory. The new architecture significantly increases system throughput and records performance improvements of up to 8.7% on various types of SPEC 2006 benchmarks. The miss rate is also improved by about 13%, with some exceptions in the sphinx3 and bzip2 benchmarks. These results could open a new window for solving the long-standing problems with shared cache in multi-core processors.