Tunable,Grating-Gated,Graphene-On-Polyimide Terahertz Modulators

An electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth is presented and it is exploited to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal grating used as a gate electrode, with an HfO₂/AlO_x gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonance cavity, coupled with an Au reflector underneath. The authors achieve 90% modulation depth of the intensity, combined with a 20 kHz electrical bandwidth in the 1.9–2.7 THz range. The modulator is then integrated with a multimode THz QCL. By adjusting the modulator operational bandwidth, the authors demonstrate that the graphene modulator can partially compensate the QCL cavity dispersion, resulting in an integrated laser behaving as a stable frequency comb over 35% of the operational range, with 98 equidistant optical modes and a spectral coverage ~1.2 THz. This paves the way for applications in the terahertz, such as tunable transformation-optics devices, active photonic components, adaptive and quantum optics, and metrological tools for spectroscopy at THz frequencies.     

Numerical and experimental characterization of antenna positioning in a dual-radio mesh router

This paper investigates the influence of the position of the antennas in a dual-radio mesh router by characterizing the router components from an electromagnetic point of view. Since the behavior of a wireless router equipped with multiple devices and antennas can be affected by mutual coupling among several close conducting bodies, numerical and experimental tests are carried out to provide some suggestions for an accurate positioning of the antennas. A reference configuration is implemented in an electromagnetic Computer-Aided Design (CAD) simulator. The most significant numerical results are validated by performing a campaign of measurements in anechoic chamber and deploying a testbed for the derivation of the experimental values of throughput, return loss, power density, and directivity.     

An Integrated CMOS Front-End for Optical Absolute Rotary Encoders

This paper presents a front-end circuit for optical rotary encoders. The light pulses modulated by the encoder disc are transduced into current signals, which are pre-processed and converted into digital waveforms related to the disc angular position information. The proposed front-end circuit is compensated against temperature drifts. Digitally programmable calibration is provided to account for spreads in impinging light pulse power. Measurement results on integrated prototypes are shown, demonstrating correct operation of the front-end with an optical input power from 0.5 W to 3 W up to a signal frequency of 500 kHz in a temperature range from 0 °C to 80 °C.     

Immunocytochemical study of alpha 1 and beta 2/3 subunits of GABAA receptors in freehand isolated vestibular Deiters' neurons

Vestibular Deiters' neurons have been isolated from bovine brain by the Hydén's freehand dissection technique and challenged with monoclonal antibodies directed toward the alpha 1 and beta 2/3 subunits of the GABAA receptors. Subsequent challenge with fluorescent secondary antibodies and confocal microscopy allowed the study of the cellular distribution of such subunits. In Deiters' neurons the beta 2/3 subunit displayed a clear presence all along the cell body profile and the initial parts of the dendrites. The alpha 1 subunit was found highly present all over the cell interior except the nuclear profiles. The strong presence inside the cells possibly masked its presence on the plasma membrane. However, in part of the cells studied a distinct presence on the plasma membrane was evident. This subunit was visualized also all along the long dendrites of these neurons. The approach we describe here, involving freehand isolated mature neurons from adult animals, may allow a better characterization of the tridimensional distribution of different types of neuronal GABAA receptors in the respect of the approach with brain slices.     

Soft UV-NIL at 20 nm scale using flexible bi-layer stamp casted on HSQ master mold

In this paper we present a comparative study of two e-Beam Lithography (EBL) processes for Nanoimprinting Lithography (NIL) master mold, i.e. the standard PMMA based EBL Si patterning process and the HSQ process. 20 nm features with minimal sidewall roughness and high uniformity are demonstrated on large surface by using HSQ process. Moreover, to validate this ultra-high resolution HSQ EBL process and to check NIL resolution performances, soft UV-NIL replications were performed using soft hard-PDMS/PDMS bi-layer stamps casted on the HSQ master mold. We demonstrate the replication of sub-20 nm nanodots of high density (pitch 60 nm) with a good uniformity on the whole field area.     

Capacitance DNA bio-chips improved by new probe immobilization strategies

Label-free DNA detection plays a crucial role in developing point-of-care biochips. Capacitance detection is a promising technology for label-free detection. However, data published in literature often show evident time drift, large standard deviation, scattered data points, and poor reproducibility. To address these problems, mercapto-hexanol or similar alkanethiols are usually considered as blocking agents. The aim of the present paper is to investigate new blocking agents to further improve DNA probe surfaces. Data from AFM, SPR, florescence microscopy, and capacitance measurements are used to investigate new lipoate and ethylene-glycol molecules. The new surfaces offer further improvements in terms of diminished detection errors. Film structures are investigated at the nano-scale to justify the detection improvements in terms of probe surface quality. This study demonstrates the superiority of lipoate and ethylene-glycol molecules as blocking candidates when immobilizing molecular probes onto spot surfaces in label-free DNA biochip.     

Environmentally Friendly Graphene Inks for Touch Screen Sensors

Graphene-based materials have attracted significant attention in many technological fields, but scaling up graphene-based technologies still faces substantial challenges. High-throughput top-down methods generally require hazardous, toxic, and high-boiling-point solvents. Here, an efficient and inexpensive strategy is proposed to produce graphene dispersions by liquid-phase exfoliation (LPE) through a combination of shear-mixing (SM) and tip sonication (TS) techniques, yielding highly concentrated graphene inks compatible with spray coating. The quality of graphene flakes (e.g., lateral size and thickness) and their concentration in the dispersions are compared using different spectroscopic and microscopy techniques. Several approaches (individual SM and TS, and their combination) are tested in three solvents (N-methyl-2-pyrrolidone, dimethylformamide, and cyrene). Interestingly, the combination of SM and TS in cyrene yields high-quality graphene dispersions, overcoming the environmental issues linked to the other two solvents. Starting from the cyrene dispersion, a graphene-based ink is prepared to spray-coat flexible electrodes and assemble a touch screen prototype. The electrodes feature a low sheet resistance (290 Ω □⁻¹) and high optical transmittance (78%), which provide the prototype with a high signal-to-noise ratio (14 dB) and multi-touch functionality (up to four simultaneous touches). These results illustrate a potential pathway toward the integration of LPE-graphene in commercial flexible electronics.     

Integration of InGaP/GaAs/Ge triple‐junction solar cells on deeply patterned silicon substrates

We report preliminary results on InGaP/InGaAs/Ge photovoltaic cells for concentrated terrestrial applications, monolithically integrated on engineered Si(001) substrates. Cells deposited on planar Ge/Si(001) epilayers, grown by plasma‐enhanced chemical vapor deposition, provide good efficiency and spectral response, despite the small thickness of the Ge epilayers and a threading dislocation density as large as 10⁷/cm². The presence of microcracks generated by the thermal misfit is compensated by a dense collection grid that avoids insulated areas. In order to avoid the excessive shadowing introduced by the use of a dense grid, the crack density needs to be lowered. Here, we show that deep patterning of the Si substrate in blocks can be an option, provided that a continuous Ge layer is formed at the top, and it is suitably planarized before the metalorganic chemical vapor deposition. The crack density is effectively decreased, despite that the efficiency is also lowered with respect to unpatterned devices. The reasons of this efficiency reduction are discussed, and a strategy for improvement is proposed and explored. Full morphological analysis of the coalesced Ge blocks is reported, and the final devices are tested under concentrated AM1.5D spectrum. Copyright © 2016 John Wiley & Sons, Ltd.     

CMOS-Compatible Room-Temperature Rectifier Toward Terahertz Radiation Detection

In this paper, we present a new rectifying device, compatible with the technology of CMOS image sensors, suitable for implementing a direct-conversion detector operating at room temperature for operation at up to terahertz frequencies. The rectifying device can be obtained by introducing some simple modifications of the charge-storage well in conventional CMOS integrated circuits, making the proposed solution easy to integrate with the existing imaging systems. The rectifying device is combined with the different elements of the detector, composed of a 3D high-performance antenna and a charge-storage well. In particular, its position just below the edge of the 3D antenna takes maximum advantage of the high electric field concentrated by the antenna itself. In addition, the proposed structure ensures the integrity of the charge-storage well of the detector. In the structure, it is not necessary to use very scaled and costly technological nodes, since the CMOS transistor only provides the necessary integrated readout electronics. On-wafer measurements of RF characteristics of the designed junction are reported and discussed. The overall performances of the entire detector in terms of noise equivalent power (NEP) are evaluated by combining low-frequency measurements of the rectifier with numerical simulations of the 3D antenna and the semiconductor structure at 1 THz, allowing prediction of the achievable NEP.     

嵌入式系统软件调试跟踪技术的发展趋势

在过去的几十年里，嵌入式工程师在开发和调试中已经越来越依赖于跟踪缓存的帮助。但随着100MHz频率以上的高速RISC处理器的普及，片内Cache、RAM和FLASH存储器逐渐变得越来越普遍。越来越多的处理器总线活动将无法在外部管脚上观测。这样，传统的收集跟踪信息的方法就不再可行了。