Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures

Investigation of the tunneling conductivity σ _d(V) of structures made on a highly doped, narrow-gap p-type semiconductor HgCdTe reveals an abrupt increase in this quantity at voltages corresponding to the start of tunneling into the conduction band. It is shown that the observed functions σ _d(V) cannot be described in the framework of a model based on single-particle tunneling. It is proposed that the abrupt increase in σ _d(V) is attributable to tunneling into exciton states. Fiz. Tekh. Poluprovodn. 32, 1069–1072 (September 1998)     

Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region

The electroluminescence and stimulated emission of lasers with one layer of InAs quantum dots (QD’s) grown in a single molecular-beam epitaxial process on vicinal GaAs(001) surfaces misoriented in the direction [010] by 2, 4 and 6° are investigated. It is discovered that an increase in the misorientation angle leads to a blue shift and a decrease in the full width at half maximum (FWHM) of the electroluminescence spectrum. This effect is attributed to a decrease in the size of the quantum dots and improvement in their size uniformity. A strong dependence of the threshold current density on the width of the spontaneous luminescence spectrum is discovered. The room-temperature threshold current density of the lasers with one layer of quantum dots and the spontaneous luminescence spectrum having the smallest FWHM (54 meV) equals 210 A/cm². Fiz. Tekh. Poluprovodn. 32, 1482–1486 (December 1998)     

Influence of the intensity of gg irradiation on the photoluminescence of GaAs:Te

The influence of gg irradiation (⁶⁰Co) of various intensities (P _γ≈1.7−7.5kGR/h) on the photoluminescence of GaAs:Te single crystals [n ₀=(1.2–2.3×10¹⁸ cm⁻³] is investigated. Together with the known photoluminescence impurity bands (hν _max≈1.2 eV and/or hν _max≈1.35 eV) and edge band (hν _max≈1.51 eV), new bands are also observed in the spectra at hν _max≈1.3 eV and hν _max≈1.48 eV. The observed effects are attributed to radiation-stimulated ordering of the donor impurity and deep impurity centers. Fiz. Tekh. Poluprovodn. 32, 38–39 (January 1998)     

Accumulation of hydrogen and its influence on the microstructure and mechanical properties of Kh18N10T steel

By the methods of thermal-desorption spectrometry and nuclear reactions, we study the processes of trapping, thermal desorption, and evolution of the profiles of distribution of deuterium ionically implanted with an energy of 12 keV into Kh18N10T steel at room temperature. The evolution of the microstructure of steel under the conditions of irradiation of samples with D₂⁺ ions up to doses of 1 · 10¹⁸ D/m²−2 · 10²² D/m² is studied by the method of electron microscopy. The regularities of changes in the mechanical properties of steel after irradiation are determined. __________ Translated from Fizyko-Khimichna Mekhanika Materialiv, Vol. 43, No. 5, pp. 117–121, September–October, 2007.     

Agens Faber: Toward a Theory of Artefacts for MAS

Human intelligence has evolved along with the use of more and more sophisticated tools, allowing Homo Faber (from Homo Habilis to Homo Sapiens Sapiens) to cope with environment changes, as well as to adapt the environment to his needs. Analogously, in this seminal paper we introduce the notion of Agens Faber, conveying the idea that agent intelligence should not be considered as separated by the agent ability to perceive and affect the environment—and so, that agent intelligence is strictly related to the artefacts that enable, mediate and govern any agent (intelligent) activity.

Along this line, we first discuss the notion of artefact for MAS in general, then we try to devise out the admissible / required / desirable features of an artefact for MAS. We elaborate on the many sorts of possible relations between agents and artefacts, focusing in particular on the issue of the rational exploitation of artefacts, and also rough out a possible taxonomy of artefacts for MAS.     

High-resolution X-ray photoelectron spectroscopy and characteristic electron-energy loss spectroscopy of the electronic structure of phosphorus-implanted silicon and quantum dots of silicon dioxide with silicon impurities

The effect of phosphorus impurities on the electronic structure of silicon single crystals and SiO₂: Si nanocomposites is studied. The SiO₂: Si structures with phosphorus impurities that are annealed over 2 h at a temperature of 1000°C exhibit an increase in the photoluminescence peak related to Si nanocrystals. The experimentally determined densities of states in the valence and conduction bands of SiO₂: Si composites are in good agreement with the local electronic structure in the vicinity of silicon impurities that is calculated within the approximation of linear muffin-tin orbitals.     

Erbium ion electroluminescence in p ++/n +/n-Si:Er/n ++ silicon diode structures

Results of experimental studies of erbium ion electroluminescence in p ⁺⁺/n ⁺/n-Si:Er/n ⁺⁺ silicon diode structures grown by sublimation molecular-beam epitaxy are discussed. The distinctive feature of these structures is that the regions of electron flux formation of (n ⁺-Si) and impact excitation of erbium ions (n-Si:Er) are spaced. The influence of the n ⁺-Si layer thickness on electrical and electroluminescent properties of diodes was studied. It was shown that n ⁺-Si layer thinning causes the transformation of the structure breakdown mechanism from tunneling to avalanche. The dependence of the Er³⁺ ion electroluminescence on the thickness of the heavily doped n ⁺-Si region is bell-shaped. At the n ⁺-Si-layer doping level n ≈ 2 × 10¹⁸ cm^?3, the maximum electroluminescence intensity is attained at an n ⁺-Si layer thickness of ～23 nm.