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141.
A Voltage and Frequency Droop Control Method for Parallel Inverters 总被引:10,自引:0,他引:10
De Brabandere K.. Bolsens B.. Van den Keybus J.. Woyte A.. Driesen J.. Belmans R.. 《Power Electronics, IEEE Transactions on》2007,22(4):1107-1115
In this paper, a new control method for the parallel operation of inverters operating in an island grid or connected to an infinite bus is described. Frequency and voltage control, including mitigation of voltage harmonics, are achieved without the need for any common control circuitry or communication between inverters. Each inverter supplies a current that is the result of the voltage difference between a reference ac voltage source and the grid voltage across a virtual complex impedance. The reference ac voltage source is synchronized with the grid, with a phase shift, depending on the difference between rated and actual grid frequency. A detailed analysis shows that this approach has a superior behavior compared to existing methods, regarding the mitigation of voltage harmonics, short-circuit behavior and the effectiveness of the frequency and voltage control, as it takes the R to X line impedance ratio into account. Experiments show the behavior of the method for an inverter feeding a highly nonlinear load and during the connection of two parallel inverters in operation. 相似文献
142.
O'Connor I. Tissafi-Drissi F. Gaffiot F. Dambre J. De Wilde M. Van Campenhout J. Van Thourhout D. Stroobandt D. 《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》2007,15(8):927-940
Integrated optical interconnect has been identified by the ITRS as a potential solution to overcome predicted interconnect limitations in future systems-on-chip. However, the multiphysics nature of the design problem and the lack of a mature integrated photonic technology have contributed to severe difficulties in assessing its suitability. This paper describes a systematic, fully automated synthesis method for integrated microsource-based optical interconnect capable of optimally sizing the interface circuits based on system specifications, CMOS technology data, and optical device characteristics. The simulation-based nature of the design method means that its results are relatively accurate, even though the generation of each data point requires only 5 min on a 1.3-GHz processor. This method has been used to extract typical performance metrics (delay, power, interconnect density) for optical interconnect of length 2.5-20 mm in three predictive technologies at 65-, 45-, and 32-nm gate length. 相似文献
143.
Min Li David Novo Bruno Bougard Claude Desset Antoine Dejonghe Liesbet Van Der Perre Francky Catthoor 《Journal of Signal Processing Systems》2011,63(1):13-25
The fast pacing diversity and evolution of wireless communications require a wide variety of baseband implementations within a short time-to-market. Besides, the exponentially increased design complexity and design cost of deep sub-micron silicon highly desire the designs to be reused as much as possible. This yields an increasing demand for reconfigurable/ programmable baseband solutions. Implementing all baseband functionalities on programmable architectures, as foreseen in the tier-2 SDR, will become necessary in the future. However, the energy efficiency of SDR baseband platforms is a major concern. This brings a challenging gap that is continuously broadened by the exploding baseband complexity. We advocate a system level approach to bridge the gap. Specifically, we fully leverage the advantages (programmability) of SDR platforms to compensate its disadvantages (energy efficiency). Highly flexible and dynamic baseband signal processing algorithms are designed and implemented to exploit the abundant dynamics in the environment and the user requirement. Instead of always performing the best effort, the baseband can dynamically and autonomously adjust its work load to optimize the average energy consumption. In this paper, we will introduce such baseband signal processing techniques optimized for SDR implementations. The methodology and design steps will be presented together with 3 representative case studies in HSDPA, WiMAX and 3GPP LTE. 相似文献
144.
利用在线应力测试技术表征了掺入Pt后对镍硅化物薄膜应力性质的影响.通过改变NiSi薄膜中Pt含量以及控制热处理的升温、降温速率实时测量了薄膜应力,发现在Si(100)衬底上生长的纯NiSi薄膜和纯PtSi薄膜的室温应力主要是热应力,且分别为775MPa和1.31GPa,而对于Ni1-xPtxSi合金硅化物薄膜,室温应力则随着Pt含量的增加而逐渐增大.应力随温度变化曲线的分析表明,Ni1-xPtxSi合金硅化物薄膜的应力驰豫温度随Pt含量的增加,从440℃(纯NiSi薄膜)升高到620℃(纯PtSi薄膜).应力驰豫温度的变化影响了最终室温时的应力值. 相似文献
145.
B.J.W. Waarsing M. Nuttin H. Van Brussel B. Corteville 《IEEE transactions on systems, man and cybernetics. Part C, Applications and reviews》2005,35(1):53-65
This paper presents our approach to extend the niche of behavior-based robotics toward manipulation. We use results from neuroscience to derive some qualitative design rules for the mechanics of the manipulator, resulting in a next-generation manipulator, the "soft arm". By defining the basic behaviors of the manipulator as trajectory-producing behaviors (which is also biologically plausible), we have designed a first test case: writing on a board with a mobile manipulator. The soft arm has not yet been developed; therefore, we have emulated such a soft robot arm on an industrial robot. 相似文献
146.
K. Chatty T. P. Chow R. J. Gutmann E. Arnold D. Alok 《Journal of Electronic Materials》2002,31(5):356-360
Hall measurements have been used to compare the properties of 4H-SiC inversion-mode MOSFETs with “wet” and “dry” gate oxides.
While the field-effect mobilities were approximately 3–5 cm2/Vs, the Hall mobilities in 4H-SiC MOSFETs in the wet and dry oxide samples were approximately 70–80 cm2/Vs. The dry-oxidized metal oxide semiconductor field effect transistors (MOSFETs) had a higher transconductance, improved
threshold voltage, improved subthreshold slope, and a higher inversion carrier concentration compared to the wet-oxidized
MOSFETs. The difference in characteristics between the wet- and the dry-oxidized MOSFETs is attributed to the larger fixed
oxide charge in the dry oxide sample and a higher interface trap density in the wet oxide sample. 相似文献
147.
A wavelet-based watermarking algorithm for ownership verificationof digital images 总被引:18,自引:0,他引:18
Access to multimedia data has become much easier due to the rapid growth of the Internet. While this is usually considered an improvement of everyday life, it also makes unauthorized copying and distributing of multimedia data much easier, therefore presenting a challenge in the field of copyright protection. Digital watermarking, which is inserting copyright information into the data, has been proposed to solve the problem. In this paper, we first discuss the features that a practical digital watermarking system for ownership verification requires. Besides perceptual invisibility and robustness, we claim that the private control of the watermark is also very important. Second, we present a novel wavelet-based watermarking algorithm. Experimental results and analysis are then given to demonstrate that the proposed algorithm is effective and can be used in a practical system. 相似文献
148.
Van V. Ibrahim T.A. Ritter K. Absil P.P. Johnson F.G. Grover R. Goldhar J. Ho P.-T. 《Photonics Technology Letters, IEEE》2002,14(1):74-76
In this paper, we demonstrate all-optical nonlinear switching in compact GaAs-AlGaAs microring resonators at the 1.55-μm wavelength. Switching is accomplished in the pump-and-probe configuration in which the pump-and-probe signals are tuned to different resonance wavelengths of the microring. Refractive index change in the microring due to free carriers generated by two photon absorption is used to switch the probe beam in and out of resonance. Measured transient responses of the pump and probe through the microring show good agreement with theoretical predictions based on nonlinear pump-probe interaction due to two photon absorption 相似文献
149.
Alok D. Arnold E. Egloff R. Barone J. Murphy J. Conrad R. Burke J. 《Electron Device Letters, IEEE》2001,22(12):577-578
A 4H silicon carbide lateral RF MOSFET has been fabricated and characterized for the first time. The improved performance of this device was facilitated by a two-metal-layer process, which optimizes the conflicting requirements of acceptable inversion-layer mobility and low contact resistance. The cut-off frequency of the device with 1-μm gate length was in excess of 7 GHz 相似文献
150.
Jun Fan Drewniak J.L. Knighten J.L. Smith N.W. Orlandi A. Van Doren T.P. Hubing T.H. DuBroff R.E. 《Electromagnetic Compatibility, IEEE Transactions on》2001,43(4):588-599
Noise on a dc power-bus that results from device switching, as well as other potential mechanisms, is a primary source of many signal integrity (SI) and electromagnetic interference (EMI) problems. Surface mount technology (SMT) decoupling capacitors are commonly used to mitigate this power-bus noise. A critical design issue associated with this common practice in high-speed digital designs is placement of the capacitors with respect to the integrated circuits (ICs). Local decoupling, namely, placing SMT capacitors in proximity to ICs, is investigated in this study. Multilayer PCB designs that employ entire layers or area fills for power and ground in a parallel plate structure are considered. The results demonstrate that local decoupling can provide high-frequency benefits for certain PCB geometries through mutual inductive coupling between closely spaced vias. The associated magnetic flux linkage is between the power and ground layers. Numerical modeling using an integral equation formulation with circuit extraction is used to quantify the local decoupling phenomenon. Local decoupling can effectively reduce high-frequency power-bus noise, though placing capacitors adjacent to ICs may limit routing flexibility, and tradeoffs need to be made based on design requirements. Design curves are generated as a function of power-bus layer thickness and SMT capacitor/IC spacing using the modeling approach to quantify the power-bus noise reduction for decoupling capacitors located adjacent to devices. Measurement data is provided to corroborate the modeling approach 相似文献