Growth and properties of Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> thin films prepared by multiple metallic layer stacks as a function of sulfurization time

In this paper, we report the two stage growth of Cu₂ZnSnS₄ (CZTS) thin films as a function of sulfurization time. First, magnetron sputtered metallic precursors were deposited sequentially (Zn/Cu/Sn/Cu) over rotating glass substrates held at 230?°C. Later, the sputtered precursors were heat treated at 500?°C in the ambiance of sulfur for various time durations in the range, 10–120 min. The sulfur treated samples were examined using various analytical tools to understand the role of sulfurization time on the CZTS growth and properties. From composition and structural analysis, Zn/Cu/Sn/Cu precursors sulfurized for shorter duration (10 and 20 min) revealed severe deficiency of sulfur that resulted in several metallic, bi-metallic and metal sulfide phases. With the increase of sulfurization time to 30 min, sulfur incorporation was enhanced and reached stoichiometric ratio (~50% S) for CZTS growth, however, samples were poorly crystalline in nature and consisted of prominent Cu_2?xS phase as well. The Zn/Cu/Sn/Cu precursors sulfurized for 60 min exhibited prominent CZTS phase without Cu_2?xS phase. Further, rise in sulfurization time to 120 min enabled drastic improvement in crystallinity of CZTS phase. Raman mapping over 60 µm × 60 µm for these films confirmed the homogeneous phase growth of CZTS. XPS study revealed the oxidation states of Cu¹⁺, Zn²⁺, Sn⁴⁺ and S^2? in CZTS films. The optimized films showed high absorption coefficient of 10⁵ cm^?1 with an optical band gap of 1.51 eV. These films showed leaf like grain morphology with high mobility and low resistivity of 18.2 cm²/V-s and 0.7 Ω-cm, respectively.     

Single-Component CMOS-Like Logic using Diketopyrrolopyrrole-Based Ambipolar Organic Electrochemical Transistors

Complementary circuits based on organic electrochemical transistors (OECTs) are attractive for the development of inexpensive and disposable point-of-care bioelectronic devices. Ambipolar OECTs, which employ a single channel material, could decrease the fabrication complexity and manufacturing costs of such circuits. An ideal channel material for ambipolar OECTs should be electrochemically stable in aqueous environments, afford facile ion insertion for both cations and anions, and also facilitate high and balanced electron and hole transport. In this study, triethylene glycol functionalized diketopyrrolopyrrole (DPP)-based polymer is proposed for the development of ambipolar OECTs. It is shown that DPP-based OECTs have a high and comparable figure of merit for both n- and p-type operations. Logic NOT, NAND, and NOR operations with corresponding complementary circuits constructed from identical DPP-based OECT devices are demonstrated. This study is an important step toward the development of sophisticated complementary metal–oxide–semiconductor-like logic circuits using single-component OECTs.     

Distrust seed set propagation algorithm to detect web spam

Web spam uses numerous techniques to misguide Web search engines in exchange of financial profit. A myriad of semi-automatic propagation model has been proposed with the purpose of combating Web spam. In this paper, distrust propagation is used to detect Web spam. An automatic distrust seed set propagation algorithm (DSP), which acts as an extension to the seed set to propagate distrust further to detect more Web spam. Experiments are conducted on WEBSPAM-UK2006 and WEBSPAM-UK2007 dataset; the results have shown that DSP enhanced the baseline algorithms and detected 17.73 % more spam hosts in the former dataset and detected 8.59 % more spam hosts in later dataset.     

Low-Temperature High-Pressure Consolidation of Amorphous Al2O3–15 mol% Y2O3

This study examined pressure consolidation of amorphous Al₂O₃–15 mol% Y₂O₃ powders prepared by co-precipitation and spray pyrolysis. The two amorphous powders had similar true densities and crystallization sequences. Uniaxial hot pressing was carried out at 450°–600°C with a moderate pressure of 750 MPa. The co-precipitated powder could be hot pressed to a maximum relative density of 98% and remained amorphous. Pressure adversely affected the densification of the spray-pyrolyzed powder by favoring an early crystallization of γ-Al₂O₃ phase at 580°C. Plastic deformation of the amorphous phase is believed to be responsible for the large densification of the amorphous powders.     

Catalytic oxidation of toluene and m-xylene by activated carbon fiber impregnated with transition metals

The catalytic oxidation of volatile organic compounds (VOCs) into mainly CO₂ and H₂O appears promising in the context of the abatement of atmospheric gaseous pollutants and is the subject of this paper. The catalytic oxidation of toluene and m-xylene was carried out in a tubular reactor on a phenolic resin based activated carbon fiber (ACF) impregnated with nitrates of Co, Cr, Ni, and Cu at the reaction temperatures below 300 °C. The extent of the removal (i.e. conversion) of toluene and m-xylene was examined through the breakthrough curves and was found to strongly depend on the types and loading of the metal precursors. The experimental results showed that the reaction rate was significantly affected by O₂ concentration below 3% (v/v). The performance of the ACFs impregnated with 5% (w/w) of Ni oxide was found to be superior to that of other metal oxides at reaction temperature between 170 and 290 °C. A surface kinetic mechanism for the catalytic oxidation of volatile organic compound was proposed and incorporated in a transport model developed to explain the experimental breakthrough data.     

Understanding the structural origin of crystalline phase transformations in nepheline (NaAlSiO4)‐based glass‐ceramics

Nepheline (Na₆K₂Al₈Si₈O₃₂) is a rock‐forming tectosilicate mineral which is by far the most abundant of the feldspathoids. The crystallization in nepheline‐based glass‐ceramics proceeds through several polymorphic transformations — mainly orthorhombic, hexagonal, cubic — depending on their thermochemistry. However, the fundamental science governing these transformations is poorly understood. In this article, an attempt has been made to elucidate the structural drivers controlling these polymorphic transformations in nepheline‐based glass‐ceramics. Accordingly, two different sets of glasses (meta‐aluminous and per‐alkaline) have been designed in the system Na₂O–CaO–Al₂O₃–SiO₂ in the crystallization field of nepheline and synthesized by the melt‐quench technique. The detailed structural analysis of glasses has been performed by ²⁹Si, ²⁷Al, and ²³Na magic‐angle spinning — nuclear magnetic resonance (MAS NMR), and multiple‐quantum MAS NMR spectroscopy, while the crystalline phase transformations in these glasses have been studied under isothermal and non‐isothermal conditions using differential scanning calorimetry (DSC), X‐ray diffraction (XRD), and MQMAS NMR. Results indicate that the sequence of polymorphic phase transformations in these glass‐ceramics is dictated by the compositional chemistry of the parent glasses and the local environments of different species in the glass structure; for example, the sodium environment in glasses became highly ordered with decreasing Na₂O/CaO ratio, thus favoring the formation of hexagonal nepheline, while the cubic polymorph was the stable phase in SiO₂–poor glass‐ceramics with (Na₂O+CaO)/Al₂O₃ > 1. The structural origins of these crystalline phase transformations have been discussed in the paper.     

Structural Characteristics and Electrical Conductivity of Spark Plasma Sintered Ytterbia Co‐doped Scandia Stabilized Zirconia

The effect of replacing Sc₂O₃ with Yb₂O₃ on the structural and electrical properties of xYb₂O₃–(12–x)Sc₂O₃–88ZrO₂ has been investigated. Spark plasma sintering technique is employed to fabricate dense bulk samples from the nano‐sized powders. X‐ray diffraction and transmission electron microscopy performed on pellets indicate the existence of cubic and rhombohedral phases in 12ScSZ, and a single cubic phase in all the co‐doped compositions. However, Raman spectroscopic studies suggest the presence of a metastable tetragonal t″‐phase along with rhombohedral phases in 12ScSZ, whereas a single cubic phase in all the co‐doped compositions. Significant enhancement in the conductivity of grain and grain boundary is observed on replacing Sc₂O₃ with Yb₂O₃. In the intermediate temperature range, 1Yb11ScSZ exhibits the highest, while 12ScSZ shows the lowest conductivity values, which is attributed to corresponding phases present in that range. Through co‐doping with >1 mol% Yb₂O₃ leads to conductivity decrease, but the value remains higher than that of 12ScSZ. A sharp conductivity change is observed in 12ScSZ and 1Yb11ScSZ samples, which is attributed to partial phase transition as well to the formation of cation‐vacancy complexes. In this work, the beneficial effect of Yb₂O₃ co‐doping in 12ScSZ on the phase and conductivity has been highlighted.     

Microstructural evolution in infiltration‐growth processed MgB2 bulk superconductors

The study reports phase and microstructural evolution in MgB₂ bulk superconductors fabricated by an infiltration and growth (IG) process. Three distinct stages, (1) intermediate boride formation, (2) bulk liquid Mg infiltration, and (3) MgB₂ layer formation, were identified in IG process after detailed examination of series of samples prepared with varied heating conditions. The intermediate phase Mg₂B₂₅, isomorphous to β‐boron, was detected prior to MgB₂ phase formation in stage (1). Due to volume expansion involved in stage 1, cracks formed in the β‐boron particles and propagated radially inwards during stage 3. The growing MgB₂ particles sintered simultaneously with formation of grain boundaries during the process, as evidenced by the measured hardness and critical current density in these samples. From our observations, we estimate the total time needed for complete transformation to MgB₂.     

Low Voltage High Output Impedance Bulk-Driven Quasi-Floating Gate Self-Biased High-Swing Cascode Current Mirror

A low voltage self-biased high-swing cascode current mirror using bulk-driven quasi-floating gate MOSFET is proposed in this paper. The proposed current mirror bandwidth and especially the output impedance show a significant improvement compared to prior arts. The current mirror presented is designed using bulk-driven and bulk-driven quasi-floating gate N-channel MOS transistors, which helped it to operate at very low supply voltage of \({\pm }0.2\,\hbox {V}\). To achieve high output resistance, the current mirror uses regulated cascode stage followed by super cascode architecture. The small-signal analysis carried out proves the improvement achieved by proposed current mirror. The current mirror circuit operates well for input current ranging from 0 to \(250\,{\upmu }\mathrm{A}\) with good linearity and shows the bandwidth of 285 MHz. The input and output resistances are found as \(240\,\Omega \) and \(19.5\,\hbox {G}\Omega \), respectively. Further, the THD analysis and Monte Carlo simulations carried prove the robustness of proposed current mirror. The complete analysis is done using HSpice on UMC \(0.18\,\upmu \mathrm{m}\) technology.