全文获取类型
收费全文 | 436735篇 |
免费 | 5648篇 |
国内免费 | 1545篇 |
专业分类
电工技术 | 7435篇 |
综合类 | 337篇 |
化学工业 | 65763篇 |
金属工艺 | 17764篇 |
机械仪表 | 13636篇 |
建筑科学 | 10284篇 |
矿业工程 | 2675篇 |
能源动力 | 11229篇 |
轻工业 | 38919篇 |
水利工程 | 4839篇 |
石油天然气 | 9480篇 |
武器工业 | 27篇 |
无线电 | 51643篇 |
一般工业技术 | 86848篇 |
冶金工业 | 77661篇 |
原子能技术 | 9578篇 |
自动化技术 | 35810篇 |
出版年
2021年 | 3693篇 |
2020年 | 2782篇 |
2019年 | 3492篇 |
2018年 | 5997篇 |
2017年 | 6038篇 |
2016年 | 6608篇 |
2015年 | 4172篇 |
2014年 | 7056篇 |
2013年 | 19680篇 |
2012年 | 11722篇 |
2011年 | 15914篇 |
2010年 | 12608篇 |
2009年 | 14081篇 |
2008年 | 14620篇 |
2007年 | 14553篇 |
2006年 | 13053篇 |
2005年 | 11893篇 |
2004年 | 11195篇 |
2003年 | 10992篇 |
2002年 | 10423篇 |
2001年 | 10857篇 |
2000年 | 9913篇 |
1999年 | 10415篇 |
1998年 | 25155篇 |
1997年 | 17612篇 |
1996年 | 13381篇 |
1995年 | 10182篇 |
1994年 | 8875篇 |
1993年 | 8990篇 |
1992年 | 6654篇 |
1991年 | 6386篇 |
1990年 | 6154篇 |
1989年 | 5976篇 |
1988年 | 5882篇 |
1987年 | 4904篇 |
1986年 | 4885篇 |
1985年 | 5771篇 |
1984年 | 5282篇 |
1983年 | 4910篇 |
1982年 | 4484篇 |
1981年 | 4504篇 |
1980年 | 4375篇 |
1979年 | 4267篇 |
1978年 | 4127篇 |
1977年 | 4526篇 |
1976年 | 5485篇 |
1975年 | 3679篇 |
1974年 | 3452篇 |
1973年 | 3622篇 |
1972年 | 2999篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
81.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
82.
N. Jongen M. Donnet P. Bowen J. Lemaître H. Hofmann R. Schenk C. Hofmann M. Aoun‐Habbache S. Guillemet‐Fritsch J. Sarrias A. Rousset M. Viviani M.T. Buscaglia V. Buscaglia P. Nanni A. Testino J.R. Herguijuela 《化学工程与技术》2003,26(3):303-305
The synthesis of powders with controlled shape and narrow particle size distributions is still a major challenge for many industries. A continuous Segmented Flow Tubular Reactor (SFTR) has been developed to overcome homogeneity and scale‐up problems encountered when using batch reactors. Supersaturation is created by mixing the co‐reactants in a micromixer inducing precipitation; the suspension is then segmented into identical micro‐volumes by a non‐miscible fluid and sent through a tube. These micro‐volumes are more homogeneous when compared to large batch reactors leading to narrower size distributions, better particle morphology, polymorph selectivity and stoichiometry. All these features have been demonstrated on single tube SFTR for different chemical systems. To increase productivity for commercial application the SFTR is being “scaled‐out” by multiplying the number of tubes running in parallel instead of scaling‐up by increasing their size. The versatility of the multi‐tube unit will allow changes in type of precipitate with a minimum of new investment as new chemistry can be researched, developed and optimised in a single tube SFTR and then transferred to the multi‐tube unit for powder production. 相似文献
83.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
84.
We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si. 相似文献
85.
M. Ganschow C. Hellriegel E. Kneuper M. Wark C. Thiel G. Schulz‐Ekloff C. Bruchle D. Whrle 《Advanced functional materials》2004,14(3):269-276
Dye‐loaded AlPO4‐5 single crystals were prepared by microwave‐assisted hydrothermal synthesis from a batch, containing a mixture of three chromophores (Coumarin 40, Rhodamine BE50, and Oxazine 1) differing in their absorption range, molecular dimensions, and solubilities. Confocal fluorescence images reveal a spatial separation effect of the dye molecules, where the slimmer, more‐soluble dye molecule (Coumarin 40) is uniformly distributed in the body of the single crystal, and the bulky and/or less‐soluble ones (Rhodamine BE50, Oxazine 1) are situated in distinct domains. Visible spectra show good panchromatic absorption of visible light. Fluorescence lifetime measurements indicate the presence of an energy transfer cascade of the entirely fixed dye molecules from Coumarin 40 to Oxazine 1. The transfer mechanism is predominantly radiative. 相似文献
86.
Previously unknown compounds AI
I(BUO5)2·nH2O (AI
I = Mg, Ca, Sr, Ba; n = 0-7) were synthesized. Their structure and thermal decomposition were studied by X-ray diffraction, IR spectroscopy, and thermal analysis. 相似文献
87.
Solar cells based on SnO2/Cd0.4Zn0.6S/CdTe heterostructures are fabricated by electrochemical deposition, and the dependences of their electrical and photoelectric properties on the thermal annealing conditions are studied. It is shown that thermal annealing reduces the tunnel currents by almost two orders of magnitude. The best conditions of thermal annealing are determined (t = 300°C and τ = 9 min). These conditions provide the highest photosensitivity of the heterostructures under study (I sc ≈ 21.2 mA/cm2, U oc ≈ 813 mV, and η = 14.7%). 相似文献
88.
Dobkin R. Ginosar R. Sotiriou C.P. 《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》2006,14(10):1063-1074
Globally asynchronous, locally synchronous (GALS) systems-on-chip (SoCs) may be prone to synchronization failures if the delay of their locally-generated clock tree is not considered. This paper presents an in-depth analysis of the problem and proposes a novel solution. The problem is analyzed considering the magnitude of clock tree delays, the cycle times of the GALS module, and the complexity of the asynchronous interface controllers using a timed signal transition graph (STG) approach. In some cases, the problem can be solved by extracting all the delays and verifying whether the system is susceptible to metastability. In other cases, when high data bandwidth is not required, matched-delay asynchronous ports may be employed. A novel architecture for synchronizing inter-modular communications in GALS, based on locally delayed latching (LDL), is described. LDL synchronization does not require pausable clocking, is insensitive to clock tree delays, and supports high data rates. It replaces complex global timing constraints with simpler localized ones. Three different LDL ports are presented. The risk of metastability in the synchronizer is analyzed in a technology-independent manner 相似文献
89.
The variation of current density with bias or temperature is examined for DNA molecules of different configuration. To this end, the DNA molecule is represented as an equivalent electrical network whose behavior is then simulated with PSPICE. The results are found to be in close agreement with ones obtained within a physical model. It is established that the electrical response of a DNA molecule to an applied electric field depends on the boundary conditions and the potential profile along the molecule. This finding should contribute to the creation of a complete library of DNA-molecule configurations with prescribed electrical properties. 相似文献
90.
Self-induced effects in a passive polarization-independent vertical-cavity semiconductor gate are investigated numerically and experimentally. We demonstrate all-optical seed-pulse extraction for synchronization of differential phase-shift keying and ON-OFF keying packets at 10 Gb/s. Our results provide evidence that vertical-cavity gates, exploiting saturable absorption in semiconductor quantum-wells, exhibit attractive performances in terms of efficiency, power consumption, and polarization independency. 相似文献