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31.
Li Z.-M. Landheer D. Veilleux M. Conn D.R. Surridge R. Xu J.M. McDonald R.I. 《Photonics Technology Letters, IEEE》1992,4(5):473-476
The authors have developed a 2-D device simulator for heterostructure metal-semiconductor-metal (MSM) photodetectors. They have incorporated a model of multilayer optics into the simulator and used it to analyze the temporal response of a resonant-cavity enhanced heterostructure with a confining buffer layer and a distributed Bragg reflector (DBR). The authors show that through fine tuning the layer thicknesses, optical resonance enhancement of the light absorption can be obtained 相似文献
32.
Fanggao Chang Tao Li Yongxia Ge Zhenping Chen Zhongshi Liu Xiping Jing 《Journal of Materials Science》2007,42(17):7109-7115
DC resistivity, dielectric constant, dielectric loss and positron annihilation spectra of (Ba1−x
Ho
x
)TiO3 ceramics have been measured as a function of holmium concentration x. It has been found that the DC resistivity of (Ba1−x
Ho
x
)TiO3 is strongly dependent on the Ho content: it decreases three orders of magnitude and reaches a minimum at x = 0.4%. Doping with 0.6% holmium increases the permittivity of BaTiO3 by approximately three times (from ∼1,300 to ∼4,000), with only a slight increase in the corresponding dielectric loss. The
local electron density and defect concentration estimated using positron annihilation technique conforms well to the features
found in the dielectric and resistivity measurements. The results have been discussed in terms of a mixed compensation model. 相似文献
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36.
戴力农 《艺术与设计.数码设计》2007,(5)
在上海地铁研究中,我们发现了许多使用者的不满。这些不满来自于设计师对使用者的缺乏了解和缺乏关注。通过对上海地铁真实的使用者、真实的地点和真实的时间的调研,我们分析出25项上海地铁使用者的需求。并提出希望设计师能够从这些使用者的需求出发,去作为使用者带来良好体验的设计。 相似文献
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39.
Sanghyun Ju Jianye Li Pimparkar N. Alam M.A. Chang R.P.H. Janes D.B. 《Nanotechnology, IEEE Transactions on》2007,6(3):390-395
Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO2 gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold 相似文献
40.
Optical absorption and photoluminescence of Ca3(VO4)2 single crystal grown by a floating-zone technique and containing Nd3+ ions were investigated. High absorption coefficients and broadening of most absorption bands are present at 300 K, while substructures in some of the same bands can be evidenced at 12 K. Most features of measured spectra are characteristic of random occupation of more than a single Ca2+ site by the Nd3+ ion and of distortions provoked by different charge compensation mechanisms involving oxygen vacancies promotion in the crystal lattice. Nd3+ optical properties were studied by using the Judd-Ofelt theory to calculate the spectral parameters relevant for laser applications. 相似文献