Adaptive backstepping control and friction compensation for AC servo with inertia and load uncertainties

An adaptive backstepping control with friction compensation scheme is presented. A third-order linear dynamic model is used for the AC motor control system design while the LuGre dynamic friction model with nonuniform friction force variations characterizes the friction force. Nonlinear adaptive control laws are designed to compensate the unknown system parameters and disturbances. System robustness and asymptotic position tracking performance are shown through simulation and experimental results.     

Realization of transmission zeros in combline filters using an auxiliary inductively coupled ground plane

The out-band transmission zeros of the multilayer low-temperature co-fired ceramic bandpass filter are studied. The design target of this filter, with passband between 2.3-2.65 GHz (the true application is 2.4-2.483 GHz), is to reject the local oscillator and image signals and, in the mean time, to suppress the harmonic frequency. This filter is a modified three-pole combline filter, which can easily achieve a high rejection rate and low insertion loss. The source-load coupling capacitor incorporation with cross-coupling grounding inductors can generate three transmission zeros. By properly adjusting the inductance values of the inductors between three resonators and ground the transmission zero can easily be manipulated at a high-side skirt to suppress the harmonic frequency. The measured results match well with the electromagnetic simulation that provides evidence for the feasibility of the proposed design.     

Printed microinductors on flexible substrates for power applications

A low-profile microinductor was fabricated on a copper-clad polyimide substrate where the current carrying coils were patterned from the existing metallization layer and the magnetic core was printed using a magnetic ceramic-polymer composite material. Highly loaded ferrite-polymer composite materials were formulated, yielding adherent films with 4/spl pi/M/sub s//spl ap/3900 G at +5000 Oe applied DC field. These composite magnetic films combine many of the superior properties of high temperature ceramic magnetic materials with the inherent processibility of polymer thick films. Processing temperatures for the printed films were between 100/spl deg/C and 130/spl deg/C, facilitating integration with a wide range of substrates and components. The quality factor of the microinductor was found to peak at Q=18.5 near 10 MHz, within the optimal frequency range for power applications. A flat, nearly frequency independent inductance of 1.33 /spl mu/H was measured throughout this frequency range for a 5 mm/spl times/5 mm component, with a DC resistance of 2.6 /spl Omega/ and a resonant frequency of 124 MHz. The combination of printed ceramic composites with organic/polymer substrates enables new methods for embedding passive components and ultimately the integration of high Q inductors with standard integrated circuits for low profile power electronics.     

High-yield flip-chip bonding and packaging of low-threshold VCSEL arrays on sapphire substrates

Oxide-confined top-emitting 850 nm and bottom-emitting 980 nm vertical-cavity surface-emitting laser (VCSEL) 8/spl times/8 arrays were designed and fabricated for applications of optical interconnects. The arrays were flip-chip bonded onto sapphire substrates that contain complimentary metal-oxide-semiconductor (CMOS) driver and fan-out circuitries. The off-sited bonding contacts and minimized bonding force produced very high yield of the hybridization process without causing damage to the VCSEL mesas. The hybridized devices were further mounted either on printed circuit board (PCB) or in 68-pin pin-grid-array (PGA) packages. The transparent sapphire substrate allowed optical outputs from the top-emitting VCSEL arrays to transmit directly through without additional substrate removal procedure. Lasing thresholds below 250 /spl mu/A for 850 nm VCSELs and 800 /spl mu/A for 980 nm VCSEL were found at room temperature. The oxide confinement apertures of VCSELs were measured to be around 6 /spl mu/m in diameter. High-speed data transmission demonstrated a bandwidth of up to 1 Gbits/s per channel for these hybridized VCSEL transmitters.     

Low-cost monopulse antenna using bi-directionally-fed microstrip patch array

A new technique for realising a simple low-cost monopulse antenna using a symmetrical bi-directionally-fed microstrip patch array is described. The antenna is designed and demonstrated at Ka-band. Two squinted beams are radiated from a bi-directionally fed microstrip patch array, and a sum/difference pattern is synthesised using the in-phase and out-of-phase signals achieved using a hybrid ring coupler. The measured return loss is better than 10 dB at the sum and difference port, and the depth at broadside is more than 30 dB.     

超声波测距仪研究

根据声波反射原理,应用单片机(AT89S52)技术和UCM40T超声波传感器设计了一种超声波测距仪.硬件部分主要由控制模块、超声波发射模块、超声波接收模块和显示模块构成.软件部分采用单片机C语言编程,主要由键盘扫描、定时器/计数器初始化、超声波发射子程序、中断服务子程序和LED动态显示子程序构成.此系统测距范围为0.06 m～1.00 m,精度达到1 cm,具有易控制、工作可靠、测距准确度高等优点.     

基于USB接口的电化学沉积仪器数据采集系统的研究

数据采集系统是试验仪器的重要组成部分.介绍电化学沉积试验仪器的原理及其数据采集系统部分的设计.该采集系统中采用AVR单片机AT90USB1287处理器实现与终端PC的数据通信.USB外设把采集到的数据信号发往主机,从而在主机上实现了数据图像的实时显示.实验结果表明该USB接口的数据采集系统数据传输速率快、性能稳定.     

Conjugated‐Polymer‐Based Lateral Heterostructures Defined by High‐Resolution Photolithography

Solution processing of polymer semiconductors provides a new paradigm for large‐area electronics manufacturing on flexible substrates, but it also severely restricts the realization of interesting advanced device architectures, such as lateral heterostructures with defined interfaces, which are easily accessible with inorganic materials using photolithography. This is because polymer semiconductors degrade, swell, or dissolve during conventional photoresist processing. Here a versatile, high‐resolution photolithographic method is demonstrated for patterning of polymer semiconductors and exemplify this with high‐performance p‐type and n‐type field‐effect transistors (FETs) in both bottom‐ and top‐gate architectures, as well as ambipolar light‐emitting field‐effect transistors (LEFETs), in which the recombination zone can be pinned at a photolithographically defined lateral heterojunction between two semiconducting polymers. The technique therefore enables the realization of a broad range of novel device architectures while retaining optimum materials performance.     

Swarm intelligence‐based anycast routing protocol in ubiquitous networks

As digital devices with communication capability become more pervasive, we are entering the era of ubiquitous computing, as predicted by Mark Weiser. In ubiquitous environments, distributed context management servers are deployed everywhere to provide information and computing resources for users anytime and anywhere. Smart handheld computing devices with context‐aware applications may retrieve context information from the nearest server. This study investigates the problem of routing packets to the nearest server in a ubiquitous environment. An anycast routing protocol based on swarm intelligence, referred to as ARPSI, is proposed to route packets dynamically to a nearby server in a mobile, ad hoc, wireless network. Based on swarm intelligence, ARPSI is able to find a short path to a neighboring server efficiently and quickly. Simulations are conducted to evaluate the performance of ARPSI and our simulation results show that ARPSI achieves a higher packet delivery ratio, shorter routing path to anycast servers, and lower control packet overhead than the AODV‐based anycast protocol (A‐AODV) protocol. Copyright © 2009 John Wiley & Sons, Ltd.     

Investigation of Coulomb scattering on sSi/Si0.5Ge0.5/sSOI quantum-well p-MOSFETs

sSi/Si_0.5Ge_0.5/sSOI quantum-well (QW) p-MOSFETs with HfO₂/TiN gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si_0.5Ge_0.5 QW p-MOSFET was mainly governed by phonon scattering from 300 to 150 K and Coulomb scattering below 150 K, respectively. Coulomb scattering was intensified by the accumulated inversion charges in the Si cap layer of this Si/SiGe heterostructure, which led to a degradation of carrier mobility in the SiGe channel, especially at low temperature.