Analysis of in situ monitored thermal cycling benefits for wireless packaging early reliability evaluation

With the increasing complexity of the power amplifier (PA) module architecture, the probability of a thermally induced stress related failure mechanism increases. To help evaluate the increase in module complexity, a more sophisticated in situ monitored thermal cycle reliability test is available. The module is monitored in real time using a resistance daisy chain methodology designed to provide coverage using resistance feedback throughout the entire hierarchy of the module and carrier board interface. Monitored temperature cycling allows for real time failure feedback and enhanced failure signature information. Further, the testing technique has proven to be a valuable method for capturing the early stages of a module mechanical failure at the temperature extremes. Moreover, statistical evaluation of the failure data (Weibull analysis) is improved and better accuracy of the failures in time (FIT) rate can be determined.     

薄膜无源技术和无源微电路抬头射频技术掀起革命风暴

无线电技术的不断推陈出新已成为微电子技术领域发展的强大动力,无论是在客户应用中还是关键业务应用中,都要求解决方案的体型更小、功能更强、可靠性更高、信号清晰度更好,并且始终保持更低的能耗.这无疑对新技术提出了更高的要求,而射频电路的设计无疑是所有设计中极为关键的设计之一,本文通过介绍下一代薄膜无源技术和无源微电路来揭示如何迎接射频技术挑战.     

Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes

We demonstrated a device with a unique planar architecture using a novel approach for obtaining low arsenic doping concentrations in long-wavelength (LW) HgCdTe on CdZnTe substrates. HgCdTe materials were grown by molecular beam epitaxy (MBE). We fabricated a p-on-n structure that we term P ⁺/π/N ⁺ where the symbol “π” is to indicate a drastically reduced extrinsic p-type carrier concentration (on the order of mid 10¹⁵ cm⁻³); P ⁺ and N ⁺ denote a higher doping density, as well as a higher energy gap, than the photosensitive base π-region. Fabricated devices indicated that Auger suppression is seen in the P ⁺/π/N ⁺ architecture at temperatures above 130 K and we obtained a saturation current on the order of 3 mA on 250-μm-diameter devices at 300 K with Auger suppression. Data shows that about a 50% reduction in dark current is achieved at 300 K due to Auger suppression. The onset of Auger suppression voltage is 450 mV at 300 K and 100 mV at 130 K. Results indicate that a reduction of the series resistance could reduce this further. A principal challenge was to obtain low p-type doping levels in the π-region. This issue was overcome using a novel deep diffusion process, thereby demonstrating successfully low-doped p-type HgCdTe in MBE-grown material. Near-classical spectral responses were obtained at 250 K and at 100 K with cut-off wavelengths of 7.4 μm and 10.4 μm, respectively. At 100 K, the measured non-antireflection-coated quantum efficiency was 0.57 at 0.1 V under backside illumination. Received November 7, 2007; accepted March 19, 2008     

Modelling of electrostatic gate operations in the Kane solid state quantum computer

The nuclear spin quantum computer proposed by Kane [Nature 393 (1998) 133] exploits as a qubit array ³¹P dopants embedded within a silicon matrix. Single-qubit operations are controlled by the application of electrostatic potentials via a set of metallic ‘A’ gates, situated above the donors, on the silicon surface, that tune the resonance frequency of individual nuclear spins, and a globally applied RF magnetic field that flips spins at resonance. Coupling between qubits is controlled by the application of potentials via a set of ‘J’ gates, between the donors, that induce an electron-mediated coupling between nuclear spins. We report the results of the study of the electric field and potential profiles arising within the Kane device from typical gate operations. The extent to which a single nuclear spin can be tuned independently of its neighbours, by operation of an associated A-gate, is examined and key design parameters in the Kane architecture are addressed. Implications for current fabrication strategies involving the implantation of ³¹P atoms are discussed. Solution of the Poisson equation has been carried out by simulation using a TCAD modelling package (Integrated Systems Engineering AG).     

Atomic Ni Anchored Covalent Triazine Framework as High Efficient Electrocatalyst for Carbon Dioxide Conversion

Electrochemically driven carbon dioxide (CO₂) conversion is an emerging research field due to the global warming and energy crisis. Carbon monoxide (CO) is one key product during electroreduction of CO₂; however, this reduction process suffers from tardy kinetics due to low local concentration of CO₂ on a catalyst's surface and low density of active sites. Herein, presented is a combination of experimental and theoretical validation of a Ni porphyrin‐based covalent triazine framework (NiPor‐CTF) with atomically dispersed NiN₄ centers as an efficient electrocatalyst for CO₂ reduction reaction (CO₂RR). The high density and atomically distributed NiN₄ centers are confirmed by aberration‐corrected high‐angle annular dark field scanning transmission electron microscopy and extended X‐ray absorption fine structure. As a result, NiPor‐CTF exhibits high selectivity toward CO₂RR with a Faradaic efficiency of >90% over the range from ?0.6 to ?0.9 V for CO conversion and achieves a maximum Faradaic efficiency of 97% at ?0.9 V with a high current density of 52.9 mA cm^?2, as well as good long‐term stability. Further calculation by the density functional theory method reveals that the kinetic energy barriers decreasing for *CO₂ transition to *COOH on NiN₄ active sites boosts the performance.     

Stable Light-Emitting Electrochemical Cells Using Hyperbranched Polymer Electrolyte

The choice of an adequate electrolyte is a fundamental aspect in polymer light-emitting electrochemical cells (PLECs) as it provides the in situ electrochemical doping and influences the performance of these devices. In this study, a hyperbranched polymer (Hybrane DEO750 8500) blended with a Li salt is used as a novel electrolyte in state-of-the-art Super Yellow (a polyphenylenevinylene) based LECs. Due to the desirable properties of the hyperbranched polymer and the homogeneous and smooth films that it forms with the emitting polymer, PLEC with excellent electroluminescent properties are obtained using a pulsed current bias scheme. The devices are very stable, with lifetimes in excess of 2000 h with initial luminance values above 450 cd m⁻², a peak efficiency of 12.6 lm W⁻¹, and sub-minute turn-on times. The stability of the devices is also studied by measuring the photoluminescence (PL) of the semiconductor during electroluminescent operation. The findings suggest that it is possible to observe the quenching of the PL in vertically stacked devices due to the advancement of the doped fronts in the film and an immediate PL recovery when the bias is removed.     

Imaging performance of A-PET: a small animal PET camera

The evolution of positron emission tomography (PET) imaging for small animals has led to the development of dedicated PET scanner designs with high resolution and sensitivity. The animal PET scanner achieves these goals for imaging small animals such as mice and rats. The scanner uses a pixelated Anger-logic detector for discriminating 2 x 2 x 10 mm3 crystals with 19-mm-diameter photomultiplier tubes. With a 19.7-cm ring diameter, the scanner has an axial length of 11.9 cm and operates exclusively in three-dimensional imaging mode, leading to very high sensitivity. Measurements show that the scanner design achieves a spatial resolution of 1.9 mm at the center of the field-of-view. Initially designed with gadolinium orthosilicate but changed to lutetium- yttrium orthosilicate, the scanner now achieves a sensitivity of 3.6% for a point source at the center of the field-of-view with an energy window of 250-665 keV. Iterative image reconstruction, together with accurate data corrections for scatter, random, and attenuation, are incorporated to achieve high-quality images and quantitative data. These results are demonstrated through our contrast recovery measurements as well as sample animal studies.     

Chloride and Indium‐Chloride‐Complex Inorganic Ligands for Efficient Stabilization of Nanocrystals in Solution and Doping of Nanocrystal Solids

Here, the surface functionalization of CdSe and CdSe/CdS core/shell nanocrystals (NCs) with compact chloride and indium‐chloride‐complex ligands is reported. The ligands provide not only short interparticle distances but additionally control doping and passivation of surface trap states, leading to enhanced electronic coupling in NC‐based arrays. The solids based on these NCs show an excellent electronic transport behavior after heat treatment at the relatively low temperature of 190 °C. Indeed, the indium‐chlorido‐capped 4.5 nm CdSe NC based thin‐film field‐effect transistor reaches a saturation mobility of μ = 4.1 cm² (V s)^?1 accompanied by a low hysteresis, while retaining the typical features of strongly quantum confined semiconductor NCs. The capping with chloride ions preserves the high photoluminescence quantum yield ( ≈ 66%) of CdSe/CdS core/shell NCs even when the CdS shell is relatively thin (six monolayers). The simplicity of the chemical incorporation of chlorine and indium species via solution ligand exchange, the efficient electronic passivation of the NC surface, as well as their high stability as dispersions make these materials especially attractive for wide‐area solution‐processable fabrication of NC‐based devices.     

Printed Sub‐2 V Gel‐Electrolyte‐Gated Polymer Transistors and Circuits

The fabrication and characterization of printed ion‐gel‐gated poly(3‐hexylthiophene) (P3HT) transistors and integrated circuits is reported, with emphasis on demonstrating both function and performance at supply voltages below 2 V. The key to achieving fast sub‐2 V operation is an unusual gel electrolyte based on an ionic liquid and a gelating block copolymer. This gel electrolyte serves as the gate dielectric and has both a short polarization response time (<1 ms) and a large specific capacitance (>10 µF cm^?2), which leads simultaneously to high output conductance (>2 mS mm^?1), low threshold voltage (<1 V) and high inverter switching frequencies (1–10 kHz). Aerosol‐jet‐printed inverters, ring oscillators, NAND gates, and flip‐flop circuits are demonstrated. The five‐stage ring oscillator operates at frequencies up to 150 Hz, corresponding to a propagation delay of 0.7 ms per stage. These printed gel electrolyte gated circuits compare favorably with other reported printed circuits that often require much larger operating voltages. Materials factors influencing the performance of the devices are discussed.     

用单个按钮实现多种功能

如果你拥有一部智能电话（例如,BlackBerry、Palm…等）、个人数字助理（PDA）、笔记本电脑或PC,那么你也许已经熟悉了用单一按钮就可以利用的多种电源功能。这些设备仅是这类例子中的几个,在这类设备中,用来给设备加电和断电的主按钮常常具有附加功能,通常是“备用”或“冬眠”模式,这种模式将设备置于一种省电模式。在笔记本电脑中,当你暂时离开时,备用模式切断对硬盘驱动器和显示屏的供电,将数据存储到存储器中,保持笔记本电脑基本部分的运行。在冬眠模式,笔记本电脑完全停机,将数据保存到硬盘驱动器而不是存储器中,