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51.
M.C. Wu Y.K. Chen T. Tanbun-Ek R.A. Logan M.A. Chin 《Photonics Technology Letters, IEEE》1991,3(10):874-876
The tunabilities of both the wavelength and the pulse-width of monolithic mode-locked semiconductor lasers are demonstrated. Pulses shorter than 1.6 ps, tunable over 8.8 mu m, have been generated by a temperature-tuned monolithic colliding pulse mode-locked (CPM) quantum-well laser. For a fixed wavelength, the pulse-width is independently controlled from 1.2 ps to longer than 3 ps by external bandpass filters. Near transform-limited time-bandwidth products of 0.34 were maintained throughout the tuning processes.<> 相似文献
52.
Shye Lin Wu Chung Len Lee Tan Fu Lei Chen C.F. Chen L.J. Ho K.Z. Ling Y.C. 《Electron Device Letters, IEEE》1994,15(4):120-122
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device 相似文献
53.
54.
Tahui Wang Chimoon Huang Chou P.C. Chung S.S.-S. Tse-En Chang 《Electron Devices, IEEE Transactions on》1994,41(9):1618-1622
A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at Vg ≃0.5 Vd in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states 相似文献
55.
Measurement and modeling of self-heating in SOI nMOSFET's 总被引:4,自引:0,他引:4
Su L.T. Chung J.E. Antoniadis D.A. Goodson K.E. Flik M.I. 《Electron Devices, IEEE Transactions on》1994,41(1):69-75
Self-heating in SOI nMOSFET's is measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of an analytical model and is a function of the silicon thickness, buried oxide thickness, and channel-metal contact separation. Under dynamic circuit conditions, the channel temperatures are much lower than predicted from the static power dissipation. This work provides the foundation for the extraction of device modeling parameters for dynamic operation (at constant temperature) from static device characterization data (where temperature varies widely). Self-heating does not greatly reduce the electromigration reliability of SOI circuits, but might influence SOI device design, e.g., requiring a thinner buried oxide layer for particular applications and scaled geometries 相似文献
56.
Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron
spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace
and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the
Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10−6 Ω-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed
at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρc increasing to 2.94 × 10−6Ω-cm2 and for an aging at 410°C for 40 h with its ρc increasing to 1.38 × 10−5 Ω-cm2. 相似文献
57.
Resilient metal spring silicone-matrix conducting composites for separable interconnections in electronics were fabricated
by the impregnation of silicone into a preform comprising randomly oriented C-shaped Cu-Be springs and a small proportion
of Sn-Pb solder, which served to connect the springs at some of their intersections. Composites containing 6.1-9.8 vol.% total
filler exhibited volume electrical resistivity 0.5-1.0 mΩ.cm and contact resistivity (with copper) 11-17 mΩ.cm2. A compressive stress of about 30 kPa was needed for the low contact resistivity to be reached. The volume 17-26% and the
contact resistivity increased by 5% after heating in air at 130-150°C for seven days. Composites containing <9 vol.% total
filler showed no stress relaxation for seven days at 6.0% strain. 相似文献
58.
The objectives of this article is to propose a new drying model for the second falling rate period known as the variable diffusion controlled period that follows after the first falling rate period and to propose a new method to determine the second critical moisture content that separates these two periods. Experimental work on paddy drying at minimum fluidization velocity was carried out in a rapid bin dryer. The effects of operating temperatures (60-120°C) and bed depths (2-6 cm) on the paddy drying characteristics were investigated. It was found that the normalized drying rate of paddy was proportional to the normalized moisture content in the first falling rate period but in the second falling rate period, the normalized drying rate of the material varies exponentially with the normalized moisture content. The different relationship between the normalized drying rate and the normalized moisture content in the first and second falling rate periods indicate that two different mechanism of moisture transport are at work. The new exponential model of the second falling rate period and the linear model of the first falling rate period were found to fit the experimental data very well. Derivation from variable diffusion equation shows that the linear model is the result of constant diffusion coefficient whereas the new exponential model is the result of linear diffusion coefficient. This also implies that the first falling rate period is a constant diffusion controlled period and the second falling rate period is a variable diffusion controlled period. In addition, drying kinetics data of a drying process that fits the exponential model over a very slow drying period will show that the drying process is under the effect of a linear diffusion coefficient. It was also found that the proposed new method to determine the second critical moisture content that distinguishes between the first and second falling rate periods by using a sudden change in the value of the drying rate gradient to a much lower value at that point is more rigorous and yet simpler than the method of determining the specific location of the receding drying boundary since it is based on the behavior of the actual drying kinetic data. 相似文献
59.
Chan K.T. Chin A. McAlister S.P. Chang C.Y. Liu J. Chien S.C. Duh D.S. Lin W.J. 《Electron Device Letters, IEEE》2003,24(1):28-30
Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology. 相似文献
60.
Kuo-Liang Chung Lung-Chun Chang 《IEEE transactions on image processing》2003,12(6):648-652
According to the observation on the distribution of motion differentials among the motion vector of any block and those of its four neighboring blocks from six real video sequences, this paper presents a new predictive search area approach for fast block motion estimation. Employing our proposed simple predictive search area approach into the full search (FS) algorithm, our improved FS algorithm leads to 93.83% average execution-time improvement ratio, but only has a small estimation accuracy degradation. We also investigate the advantages of computation and estimation accuracy of our improved FS algorithm when compared to the edge-based search algorithm of Chan and Siu (see IEEE Trans. Image Processing, vol.10, p.1223-1238, Aug. 2001); experimental results reveal that our improved FS algorithm has 74.33% average execution-time improvement ratio and has a higher estimation accuracy. Finally, we further compare the performance among our improved FS algorithm, the three-step search algorithm, and the block-based gradient descent search algorithm. 相似文献