Proton-exchange optical waveguides in Z-cut LiNbO/sub 3/ using toluic acid

Proton-exchanged planar waveguides were demonstrated in Z-cut LiNBO/sub 3/ using toluic acid as a new organic proton source. These waveguides exhibit a propagation loss of around 1 dB/cm, and a step refractive index profile with an index increase of 0.124 measured at 0.663 mu m. The diffusion rate was found to be lower than those obtained using the popular benzoic and phosphoric acids.<>     

Tunable monolithic colliding pulse mode-locked quantum-well lasers

The tunabilities of both the wavelength and the pulse-width of monolithic mode-locked semiconductor lasers are demonstrated. Pulses shorter than 1.6 ps, tunable over 8.8 mu m, have been generated by a temperature-tuned monolithic colliding pulse mode-locked (CPM) quantum-well laser. For a fixed wavelength, the pulse-width is independently controlled from 1.2 ps to longer than 3 ps by external bandpass filters. Near transform-limited time-bandwidth products of 0.34 were maintained throughout the tuning processes.<>     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

Effects of hot carrier induced interface state generation insubmicron LDD MOSFET's

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V_g ≃0.5 V_d in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states     

A circular crossed-field amplifier for in situ measurements, studyof reentrant beam effects, and comparison with numerical simulation

A low frequency, injected beam, circular format crossed-field amplifier has been designed and constructed for the purpose of studying electron-radio frequency wave interaction in reentrant devices. The device has been designed to allow in situ diagnostic probe measurements in the space between the anode and sole. The device has been operated in nonreentrant, fully reentrant, and reentrancy controlled configurations. Details of the design and operating parameters are described. Device characteristics are examined with respect to the amount of circulating charge or degree of reentrancy. A large increase in gain has been achieved from nonreentrant to the fully reentrant format. A gain of 7.2 dB has been obtained for the latter whereas only 3.8 dB has been obtained for the former with 30 mA of injected beam current. A maximum gain of 14.4 dB has been achieved for the fully reentrant configuration. Electron beam and noise measurements versus the degree of reentrancy have also been examined. Results from the nonreentrant amplifier performance have been directly compared with the MASK simulation code and good agreement has been obtained. These experiments will provide the basis for more detailed investigations on the effect of reentrancy on CFA operation and will also allow for the development of more accurate computer models of the reentrant system for numerical simulation of CFA operation     

Measurement and modeling of self-heating in SOI nMOSFET's

Self-heating in SOI nMOSFET's is measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of an analytical model and is a function of the silicon thickness, buried oxide thickness, and channel-metal contact separation. Under dynamic circuit conditions, the channel temperatures are much lower than predicted from the static power dissipation. This work provides the foundation for the extraction of device modeling parameters for dynamic operation (at constant temperature) from static device characterization data (where temperature varies widely). Self-heating does not greatly reduce the electromigration reliability of SOI circuits, but might influence SOI device design, e.g., requiring a thinner buried oxide layer for particular applications and scaled geometries     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

Resilient metal spring network silicone-matrix composite for separable interconnections

Resilient metal spring silicone-matrix conducting composites for separable interconnections in electronics were fabricated by the impregnation of silicone into a preform comprising randomly oriented C-shaped Cu-Be springs and a small proportion of Sn-Pb solder, which served to connect the springs at some of their intersections. Composites containing 6.1-9.8 vol.% total filler exhibited volume electrical resistivity 0.5-1.0 mΩ.cm and contact resistivity (with copper) 11-17 mΩ.cm². A compressive stress of about 30 kPa was needed for the low contact resistivity to be reached. The volume 17-26% and the contact resistivity increased by 5% after heating in air at 130-150°C for seven days. Composites containing <9 vol.% total filler showed no stress relaxation for seven days at 6.0% strain.     

A New Variable Diffusion Drying Model for the Second Falling Rate Period of Paddy Dried in a Rapid Bin Dryer

The objectives of this article is to propose a new drying model for the second falling rate period known as the variable diffusion controlled period that follows after the first falling rate period and to propose a new method to determine the second critical moisture content that separates these two periods. Experimental work on paddy drying at minimum fluidization velocity was carried out in a rapid bin dryer. The effects of operating temperatures (60-120°C) and bed depths (2-6 cm) on the paddy drying characteristics were investigated. It was found that the normalized drying rate of paddy was proportional to the normalized moisture content in the first falling rate period but in the second falling rate period, the normalized drying rate of the material varies exponentially with the normalized moisture content. The different relationship between the normalized drying rate and the normalized moisture content in the first and second falling rate periods indicate that two different mechanism of moisture transport are at work. The new exponential model of the second falling rate period and the linear model of the first falling rate period were found to fit the experimental data very well. Derivation from variable diffusion equation shows that the linear model is the result of constant diffusion coefficient whereas the new exponential model is the result of linear diffusion coefficient. This also implies that the first falling rate period is a constant diffusion controlled period and the second falling rate period is a variable diffusion controlled period. In addition, drying kinetics data of a drying process that fits the exponential model over a very slow drying period will show that the drying process is under the effect of a linear diffusion coefficient. It was also found that the proposed new method to determine the second critical moisture content that distinguishes between the first and second falling rate periods by using a sudden change in the value of the drying rate gradient to a much lower value at that point is more rigorous and yet simpler than the method of determining the specific location of the receding drying boundary since it is based on the behavior of the actual drying kinetic data.