CuO/ZnO甲醇合成催化剂的正电子湮没谱学研究

发展了用正电子湮没寿命参数测定用共沉淀方法制备的金属氧化物系固溶度的新方法。测量了一系列用共沉淀方法制备的不同CuO at％含量的CuO/ZnO甲醇合成催化剂粉末(压制成片)还原前后的正电子寿命谱。分析该种催化剂的固溶特性及其与正电子寿命参数的关系,得出还原后样品的固溶度为12CuOat％.支持了CuO/ZnO甲醇合成催化剂以Cu~+离子为活性中心的观点。     

勘探工程综合配套技术在巴音都兰凹陷隐蔽油气藏勘探中的应用

巴音都兰凹陷巴Ⅰ、巴Ⅱ号隐蔽油气藏的勘探以前期综合评价技术为基础,立足现有技术资料,在勘探系统工程中形成了全三维地震资料处理、薄互层录井、油气层保护、MFE二开助排为代表的隐蔽油气藏综合配套技术。文中对各项配套技术进行了论述,简要评价了应用效果,认为该套技术对二连盆地隐蔽油气藏的勘探针对性强、有效实用,较好地解决了勘探工程实施中存在的关键技术问题,可为类似领域的油气勘探提供技术借鉴。     

苯磺隆干悬浮剂技术浅析

通过对苯磺隆干悬浮剂项目的研究,进一步了解干悬浮剂的加工工艺和配方中各种助剂的相互作用;剖析助剂对主要技术指标的影响。     

A STUDY ON ACIDITY AND CATALYTIC PROPERTY OF [B] ZSM-5 CATALYST MODIFIED WITH SILICON COMPOUND BY CHEMICAL SURFACE DEPOSITION OF LIQUID-PHASE TECHNIQUE

The boron heteroatom zeolite catalyst has been modified with silicon compound by Chemical Surface Deposition of Liquid-phase (CLD) technique and the catalytic property of the modified catalyst is studied. Meanwhile, the acidity of the modified zeolite catalysts is characterized through TPD and IR technique, and the fluid adsorption method is used to determine its pore structure. The relationship between the catalytic property of the zeolite catalyst and its pore structure, its acidity has been found. The results of toluene-ethylene alkylation reaction indicate that the selectivity of p-ethyltoluene on the modified zeolite catalyst is higher than that on the zeolite catalyst before silanizated, reaching 94.14%.     

线性二次型最优控制闭环系统极点的必要条件

本文推导了线性二次型（LQ）最优控制闭环系统极点应满足的必要条件，以及与加权阵Q和R的等式关系     

APT（STLRI）—1.78型单模光纤（缆）连接器简介

利用引进的制造技术和设备,制作出了 APT(STLRI)—1.78型系列化光纤连接器。     

磷矿的电选试验研究

清水沟中低品位磷矿性质复杂，嵌布粒度细，磨至-0．174mm 92．8％，通过振动—气流联合作用摩擦荷电，采用悬浮电选机经-粗-精-扫电选。可由含P2O5为24．47％的原矿获得含P2O5为30．23％。回收率为83．26％，杂质含量合格的磷精矿。     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.