Multilayer self-assembly of TiO₂ nanoparticles and polyaniline-grafted-chitosan copolymer (CPANI) for photocatalysis

A photocatalytic thin film of TiO? nanoparticles and polyaniline-grafted-chitosan (CPANI) was fabricated by layer-by-layer (LbL) approach. The growth of the self-assembly of polymer nanocomposite was monitored by UV-vis spectroscopy and the thin film morphology was analyzed from scanning electron microscopy (SEM). Poly(styrene sulfonate) (PSS) was used as a bridging layer between TiO? nanoparticles and CPANI. Incorporation of CPANI within the LbL self-assembly of polymer nanocomposites enhanced the dye degradation ability of the thin film. These results indicate that the presence of CPANI improves the adsorption of dye in the self-assembly. The effect of surface area and the amount of catalyst was also examined. The reusability of the thin films for dye degradation study ensures the stability of the self-assembly.     

Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET

We investigate the performance of an 18 nm gate length AlInN/GaN heterostructure underlap double gate MOSFET, using 2D Sentaurus TCAD simulation. The device uses lattice-matched wideband Al_0.83In_0.17N and narrowband GaN layers, along with high-k Al₂O₃ as the gate dielectric. The device has an ultrathin body and is designed according to the ITRS specifications. The simulation is done using the hydrodynamic model and interface traps are also considered. Due to the large two-dimensional electron gas (2DEG) density and high velocity, the maximal drain current density achieved is very high. Extensive device simulation of the major device performance metrics such as drain induced barrier lowering (DIBL), subthreshold slope (SS), delay, threshold voltage (V_t), I_on/I_off ratio and energy delay product have been done for a wide range of gate and underlap lengths. Encouraging results for delay, I_on, DIBL and energy delay product are obtained. The results indicate that there is a need to optimize the I_off and SS values for specific logic design. The proposed AlInN/GaN heterostructure underlap DG MOSFET shows excellent promise as one of the candidates to substitute currently used MOSFETs for future high speed applications.     

Arsenic groundwater contamination and its health effects in the state of Uttar Pradesh (UP) in upper and middle Ganga plain, India: a severe danger

This communication presents results of our 2-year survey on groundwater arsenic contamination in three districts Ballia, Varanasi and Gazipur of Uttar Pradesh (UP) in the upper and middle Ganga plain, India. Analyses of 4,780 tubewell water samples revealed that arsenic concentrations in 46.5% exceeded 10 microg/L, in 26.7%, 50 microg/L and in 10% 300 microg/L limits. Arsenic concentrations up to 3,192 microg//L were observed. The age of tubewells (n=1,881) ranged from less than a year to 32 years, with an average of 6.5 years. Our study shows that older tubewells had a greater chance of contamination. Depth of tubewells (n=3,810) varied from 6 to 60.5 m with a mean of 25.75 m. A detailed study in three administrative units within Ballia district, i.e. block, Gram Panchayet, and village was carried out to assess the magnitude of the contamination. Before our survey the affected villagers were not aware that they were suffering from arsenical toxicity through contaminated drinking water. A preliminary clinical examination in 11 affected villages (10 from Ballia and 1 from Gazipur district) revealed typical arsenical skin lesions ranging from melanosis, keratosis to Bowens (suspected). Out of 989 villagers (691 adults, and 298 children) screened, 137 (19.8%) of the adults and 17 (5.7%) of the children were diagnosed to have typical arsenical skin lesions. Arsenical neuropathy and adverse obstetric outcome were also observed, indicating severity of exposure. The range of arsenic concentrations in hair, nail and urine was 137-10,900, 764-19,700 microg/kg, and 23-4,030 microg/L, respectively. The urine, hair and nail concentrations of arsenic correlated significantly (r=0.76, 0.61, and 0.55, respectively) with drinking water arsenic concentrations. The similarity to previous studies on arsenic contamination in West Bengal, Bihar and Bangladesh indicates that people from a significant part of the surveyed areas in UP are suffering and this will spread unless drives to raise awareness of arsenic toxicity are undertaken and an arsenic safe water supply is immediately introduced.     

Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

A full-scale, self-consistent, non-linear, large-signal model of double-drift hetero-structure IMPATT diode with general doping profile is derived. This newly developed model, for the first time, has been used to analyze the large-signal characteristics of hexagonal SiC-based double-drift IMPATT diode. Considering the fabrication feasibility, the authors have studied the large-signal characteristics of Si/SiC-based hetero-structure devices. Under small-voltage modulation (～ 2%, i.e. small-signal conditions) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode's negative conductance (5 × 10⁶S/m²), susceptance (10.4 × 10⁷ S/m^2}), average breakdown voltage (207.6 V), and power generating efficiency (15%, RF power: 25.0 W at 94 GHz) are obtained as a function of oscillation amplitude (50% of DC breakdown voltage) for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal (> 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all types of IMPATT structures with distributed and narrow avalanche zones. The simulator is made more realistic by incorporating the space-charge effects, realistic field and temperature dependent material parameters in Si and SiC. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form. This study will act as a guide for researchers to fabricate a high-power Si/SiC-based IMPATT for possible application in high-power MM-wave communication systems.     

Analysis and synthesis of feedforward neural networks usingdiscrete affine wavelet transformations

A representation of a class of feedforward neural networks in terms of discrete affine wavelet transforms is developed. It is shown that by appropriate grouping of terms, feedforward neural networks with sigmoidal activation functions can be viewed as architectures which implement affine wavelet decompositions of mappings. It is shown that the wavelet transform formalism provides a mathematical framework within which it is possible to perform both analysis and synthesis of feedforward networks. For the purpose of analysis, the wavelet formulation characterizes a class of mappings which can be implemented by feedforward networks as well as reveals an exact implementation of a given mapping in this class. Spatio-spectral localization properties of wavelets can be exploited in synthesizing a feedforward network to perform a given approximation task. Two synthesis procedures based on spatio-spectral localization that reduce the training problem to one of convex optimization are outlined.     

Molecular analysis of tumor suppressor genes p16INK4 and TP53 of osteosarcomas in Spanish children

OBJECTIVE: Alterations affecting tumor suppressor genes, specifically p16INK4 and TP53, have been shown to be involved in the development of human cancer due to their important role in the control of normal cell cycle progression. As the genetic events leading to the development of pediatric osteosarcoma remain partially unclear, we have tested the possibility that a significant number of pediatric osteosarcoma patients harbor mutations in these genes. PATIENTS AND METHODS: We have analyzed 64 samples (fresh tissues, paraffin embedded biopsies and peripheral blood lymphocytes) corresponding to 38 pediatric osteosarcoma patients. TP53 mutations were analyzed by DGGE (Denaturing Gradient Gel Electrophoresis) analysis of exons 5 through 8. We searched for deletions in the p16INK4 gene by PCR (Polymerase Chain Reaction) analysis and point mutations were screened by means of SSCP (Single Strand Conformation Polymorphisms). RESULTS: Our analysis showed that 18.4% of the samples harbored mutations in the coding region of TP53 and that 7% had a homozygous deletion of the p16INK4 gene. Our results suggest that p16INK4 deletions may constitute a bad prognostic factor and that TP53 alterations may be correlated, although not statistically, with reduced survival time. CONCLUSIONS: Mutations of the TP53 and deletion of p16INK4 tumor suppressor genes seem to be involved in the development of pediatric osteosarcoma. Moreover, alterations of these genes may constitute a prognostic factor related with poor prognosis or decreased survival time.     

A quasi-continuous-wave deep ultraviolet laser source

We have developed a quasi-CW, deep ultraviolet source producing >250 mW of 205-nm radiation. The source consists of a 100-MHz, mode-locked, 15-W, 1047-nm master-oscillator/power-amplifier, a synchronously pumped optical parametric oscillator, and three nonlinear conversion stages.     

Re-evaluation of heat transfer effects in carbon gasification reaction

The gasification reaction of carbon (viz. CO₂ + C = 2 CO) plays a very important role in the direct reduction of iron oxides as it may be the rate controlling step for the overall process. It is well established that heat and mass transfer processes affect the kinetics of gasification considerably. During this investigation several inconsistencies were noted in mathematical analysis of simultaneous heat and mass transfer of this process reported in literature. In this paper an attempt has been made to remove the inconsistencies. Appropriate differential equations for the system have been formulated and certain predictions have been compared with the existing values in literature.     

Elucidating the Impact of Mg Substitution on the Properties of NASICON-Na3+yV2−yMgy(PO4)3 Cathodes

Vanadium multiredox-based NASICON-Na_zV_2−yM_y(PO₄)₃ (3 ≤ z ≤ 4; M = Al³⁺, Cr³⁺, and Mn²⁺) cathodes are particularly attractive for Na-ion battery applications due to their high Na insertion voltage (>3.5 V vs Na⁺/Na⁰), reversible storage capacity (≈150 mA h g⁻¹), and rate performance. However, their practical application is hindered by rapid capacity fade due to bulk structural rearrangements at high potentials involving complex redox and local structural changes. To decouple these factors, a series of Mg²⁺-substituted Na_3+yV_2−yMg_y(PO₄)₃ (0 ≤ y ≤ 1) cathodes is studied for which the only redox-active species is vanadium. While X-ray diffraction (XRD) confirms the formation of solid solutions between the y = 0 and 1 end members, X-ray absorption spectroscopy and solid-state nuclear magnetic resonance reveal a complex evolution of the local structure upon progressive Mg²⁺ substitution for V³⁺. Concurrently, the intercalation voltage rises from 3.35 to 3.45 V, due to increasingly more ionic V O bonds, and the sodium (de)intercalation mechanism transitions from a two-phase for y ≤ 0.5 to a solid solution process for y ≥ 0.5, as confirmed by in operando XRD, while Na-ion diffusion kinetics follow a nonlinear trend across the compositional series.